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    B2 SOT23 Search Results

    B2 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    B2 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    DUAL NPN SOT23-6

    Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
    Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information


    Original     		PDF ZXTC2045E6 OT23-6 OT236 ZXTC2045E6TA ZXTC2045E6TC DUAL NPN SOT23-6 NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors

    ZXTC2045E6TC

    Abstract: No abstract text available
    Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information


    Original     		PDF ZXTC2045E6 OT23-6 OT236 ZXTC2045E6TA ZXTC2045E6TC ZXTC2045E6TC

    BSV52

    Abstract: 2369A SO2369 SO2369A SOT23 BSV52 n11 sot 65 so2369 n11 807g ic ua 413
    Text: BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BSV52 B2 SO2369 N11 SO 2369A N81 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS.


    Original     		PDF BSV52 SO2369/SO2369A SO2369 OT-23 SO2369/A BSV52 2369A SO2369 SO2369A SOT23 BSV52 n11 sot 65 so2369 n11 807g ic ua 413

    Dual pnp Dual npn Transistor

    Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
    Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3550 OT-23 Dual pnp Dual npn Transistor n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL

    LS3250A

    Abstract: LS3250B LS3250C LS3550 LS3550A
    Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3550 OT-23 OT-23 LS3550A, OT23-6. LS3250A LS3250B LS3250C LS3550A

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA

    Dual Transistors TO-78

    Abstract: DUAL NPN SOT23-6 LS3250A NPN SOT23-6 LS3250C LS3250 LS3250B 27B2
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3250 OT-23 OT-23 LS3250A, OT23-6. Dual Transistors TO-78 DUAL NPN SOT23-6 LS3250A NPN SOT23-6 LS3250C LS3250B 27B2

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310

    amelco

    Abstract: LS3550A
    Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* 1 TIGHT MATCHING EXCELLENT THERMAL TRACKING ABSOLUTE MAXIMUM RATINGS * SOT-23 TOP VIEW 2mV 1 3µV/°C 2 B1 E2 B2 @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF LS3550 OT-23 25-year-old, LS3550 amelco LS3550A

    Untitled

    Abstract: No abstract text available
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF BSV52 OT-23

    SOT23-6 E2

    Abstract: SOT23-6E2
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS *FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING 1 EXCELLENT THERMAL TRACKING ABSOLUTE MAXIMUM RATINGS 1 TO-78 TOP VIEW * SOT-23 TOP VIEW 2mV 3µV/°C B1 E2 B2 2 @ 25 °C unless otherwise stated


    Original     		PDF LS3250 OT-23 LS3250A, OT23-6. SOT23-6 E2 SOT23-6E2

    BSV52

    Abstract: SOT23 BSV52 mark B1 sot23
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF BSV52 OT-23 BSV52 SOT23 BSV52 mark B1 sot23

    Untitled

    Abstract: No abstract text available
    Text: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF BSV52 OT-23

    2SC1018

    Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252


    Original     		PDF 2S01280 2SC1568 2SC1518 ZTX449 2S01664 2S01225M 2SC1018 sk3024 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718

    MMPQ2907

    Abstract: SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16 MMPQ2907 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2


    Original     		PDF BCR166. /SEMB13 BCR166/F/L3 BCR166T/W SEMB13 EHA07183 EHA07173 BCR166 BCR166F BCR166L3

    BCR166

    Abstract: BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts
    Text: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2


    Original     		PDF BCR166. /SEMB13 BCR166/F/L3 BCR166T/W SEMB13 EHA07183 EHA07173 BCR166 BCR166F BCR166L3 BCR166 BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts

    CBVK741B019

    Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16 CBVK741B019 F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: BSV52 SOT23 IMPIM SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage v CBO o m O < V CES CO LU o >


    OCR Scan     		PDF BSV52 BSV52 BSV52R 100MHz DS201

    bsv52

    Abstract: No abstract text available
    Text: f Z T SG S-TH O M SO N ^ 7# lüülDSœiiiiSTrœiülOigl BSV52 S02369/S02369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 S02369 N11 S02369A N81 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING


    OCR Scan     		PDF BSV52 S02369/S02369A S02369 S02369A OT-23 S02369/A 007fl07b BSV52/S02369/S02369A bsv52

    BSV52

    Abstract: BSV52R HIGH SPEED SWITCHING NPN SOT23 DS201
    Text: SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR BSV52 P AR TM AR KIN G DETAILS: B SV52 - B2 B SV 52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER VALUE UNIT V CBO 20 V V CES 20 V 12 V SYM BO L C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e


    OCR Scan     		PDF BSV52 BSV52R BSV52 100MHz DS201 HIGH SPEED SWITCHING NPN SOT23

    E80F

    Abstract: MINI-MELF DIODE RED CATHODE
    Text: SCHOTTKY DIODES PACKAGING Quantity per rac. or box Buffix following standard part number Packing Leade DO 35 DO 41 53 mm e xlaj reel No standard execution 4000 3000 26 mm axial Am m opack box — B2 4000 3000 reel — AR 2 (cathode up) — AR 1 (cathode down)


    OCR Scan     		PDF