B2060
Abstract: B2060g b2060 aka MBRB2060CT MBRB2060CTG MBRB2060CTT4 MBRB2060CTT4G
Text: MBRB2060CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • • •
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MBRB2060CT
O-220
MBRB2060CT/D
B2060
B2060g
b2060 aka
MBRB2060CT
MBRB2060CTG
MBRB2060CTT4
MBRB2060CTT4G
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B2060g
Abstract: *B2060G
Text: MBRB2060CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • • • http://onsemi.com
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MBRB2060CT
O-220
MBRB2060CT/D
B2060g
*B2060G
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B2060g
Abstract: B2060 b2060 aka MBR2060CT MBRB2060CT MBRB2060CTG MBRB2060CTT4 *B2060G
Text: MBRB2060CT, MBR2060CT SWITCHMODEt Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • •
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MBRB2060CT,
MBR2060CT
O-220/D2PAK
O-220
MBRB2060CT/D
B2060g
B2060
b2060 aka
MBR2060CT
MBRB2060CT
MBRB2060CTG
MBRB2060CTT4
*B2060G
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B2060g
Abstract: b2060 221D-03 221D MBRF2060CT MBRF2060CTG b2060 aka SCHOTTKY BARRIER RECTIFIER aka *B2060G
Text: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF2060CT
MBRF2060CT/D
B2060g
b2060
221D-03
221D
MBRF2060CT
MBRF2060CTG
b2060 aka
SCHOTTKY BARRIER RECTIFIER aka
*B2060G
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B2060G
Abstract: *B2060G NRVBB2060CTT4G B2060 PPAP MANUAL for automotive industry 418B-04 b2060 aka MBR2060CTG
Text: MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com SCHOTTKY BARRIER
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MBRB2060CTG,
MBR2060CTG,
NRVBB2060CTT4G
O-220/D2PAK
O-220
AEC-Q101
MBRB2060CT/D
B2060G
*B2060G
B2060
PPAP MANUAL for automotive industry
418B-04
b2060 aka
MBR2060CTG
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B2060g
Abstract: B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF2060CT
MBRF2060CT/D
B2060g
B2060
b2060 aka
SCHOTTKY BARRIER RECTIFIER aka
221D-03
MBRF2060CT
MBRF2060CTG
221D
*B2060G
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B2060G
Abstract: No abstract text available
Text: MBRJ2060CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRJ2060CTG
MBRJ2060CT/D
B2060G
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B2060g
Abstract: *B2060G SCHOTTKY BARRIER RECTIFIER aka
Text: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF2060CT
MBRF2060CT/D
B2060g
*B2060G
SCHOTTKY BARRIER RECTIFIER aka
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B2060G
Abstract: No abstract text available
Text: MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com SCHOTTKY BARRIER
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MBRB2060CTG,
MBR2060CTG,
NRVBB2060CTT4G
220/D2PAK
MBRB2060CT/D
B2060G
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B2060G
Abstract: No abstract text available
Text: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF2060CT
MBRF2060CT/D
B2060G
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