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    fet K 793

    Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic


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    b241fl2tà MGF1402B 12GHz MGF1402B 157MIN. fet K 793 MGF1402 cdb 838 S22VS Q017 91 569 775 -35 S 30ria PDF