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Nexperia PTVS22VS1UR,115 TVS DIODE 22VWM 35.5VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VS1UR,115	Cut Tape	50,698		1	1 $0.36 10 $0.236 100 $0.36 1000 $0.084 10000 $0.084	Buy Now
	PTVS22VS1UR,115	Digi-Reel	50,698		1	1 $0.36 10 $0.236 100 $0.36 1000 $0.084 10000 $0.084	Buy Now
	PTVS22VS1UR,115	Reel	48,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0835	Buy Now
Avnet Americas	PTVS22VS1UR,115	Reel		6 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.08717	Buy Now
Mouser Electronics	PTVS22VS1UR,115		3,664			1 $0.36 10 $0.236 100 $0.148 1000 $0.084 10000 $0.083	Buy Now
Newark	PTVS22VS1UR,115	Cut Tape	2,062		5	1 $0.427 10 $0.346 100 $0.221 1000 $0.15 10000 $0.15	Buy Now
TTI	PTVS22VS1UR,115	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.084	Buy Now

TME	PTVS22VS1UR,115				3	1 - 10 $0.281 100 $0.142 1000 $0.125 10000 $0.113	Get Quote
Avnet Asia	PTVS22VS1UR,115			6 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.08789	Buy Now
Avnet Silica	PTVS22VS1UR,115		105,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	PTVS22VS1UR,115	Cut Tape	4,712			1 - 10 $0.247 100 $0.0988 1000 $0.0664 10000 $0.0664	Buy Now
EBV Elektronik	PTVS22VS1UR,115			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	PTVS22VS1UR,115		42,000		1	1 - 10 - 100 - 1000 - 10000 $0.1249	Buy Now
Nexperia PTVS22VS1UTR-QX TVS DIODE 22VWM 35.5VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VS1UTR-QX	Cut Tape	2,975		1	1 $0.57 10 $0.353 100 $0.57 1000 $0.15185 10000 $0.15185	Buy Now
	PTVS22VS1UTR-QX	Digi-Reel	2,975		1	1 $0.57 10 $0.353 100 $0.57 1000 $0.15185 10000 $0.15185	Buy Now
	PTVS22VS1UTR-QX	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.107	Buy Now
Avnet Americas	PTVS22VS1UTR-QX	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.098	Buy Now
Mouser Electronics	PTVS22VS1UTR-QX					1 $0.42 10 $0.284 100 $0.192 1000 $0.136 10000 $0.091	Get Quote
Newark	PTVS22VS1UTR-QX	Cut Tape			5	1 $0.437 10 $0.295 100 $0.2 1000 $0.141 10000 $0.141	Buy Now
TTI	PTVS22VS1UTR-QX	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.092	Buy Now
Nexperia PTVS22VS1UTR,115 TVS DIODE 22VWM 35.5VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VS1UTR,115	Digi-Reel	2,680		1	1 $0.47 10 $0.309 100 $0.47 1000 $0.132 10000 $0.132	Buy Now
	PTVS22VS1UTR,115	Cut Tape	2,680		1	1 $0.47 10 $0.309 100 $0.47 1000 $0.132 10000 $0.132	Buy Now
	PTVS22VS1UTR,115	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.096	Buy Now
Avnet Americas	PTVS22VS1UTR,115	Reel		8 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.10349	Buy Now
Mouser Electronics	PTVS22VS1UTR,115		2,968			1 $0.41 10 $0.274 100 $0.185 1000 $0.13 10000 $0.087	Buy Now
TTI	PTVS22VS1UTR,115	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.091	Buy Now
TME	PTVS22VS1UTR,115				1	1 $0.37 10 $0.285 100 $0.18 1000 $0.119 10000 $0.09	Get Quote

Avnet Silica	PTVS22VS1UTR,115			10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Hirose Electric Co Ltd PS2-2VS-42C CONN RCPT HSG 44POS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PS2-2VS-42C	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC PTVS22VS1UR-8X TVS DIODE 22VWM 35.5VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS22VS1UR-8X	Bulk			4,445	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now

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S22VS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MMIC SWITCH Abstract: RTPA5250-130 Text: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information	Original	RTPA5250-130 RTPA5250-130 MMIC SWITCH	PDF
Untitled Abstract: No abstract text available Text: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm \| \| \| \| \| \| \| \| \| \| \| \| \| \| APPLICATIONS: • GPS STANDARD SPECIFICATIONS:	Original	42MHz AFS1575 42W90-TS5 ISO9001	PDF
Untitled Abstract: No abstract text available Text: SMD 1575.42MHz SAW Filter AFS1575.42W90-TS5 Pb RoHS Compliant FEATURES: • Low insertion loss 2.2dB max • 2.5 x 2.0 x 1.0mm • Suitable for RoHS reflow profile 2.5 x 2.0 x 1.0mm \| \| \| \| \| \| \| \| \| \| \| \| \| \| APPLICATIONS: • GPS STANDARD SPECIFICATIONS:	Original	42MHz AFS1575 42W90-TS5 ISO9001	PDF
DIVERSITY MODULE MURATA Abstract: raytheon ltcc 78-S11 RAYTHEON RTPA5250-130 murata ltcc grm39 MAXB68 16qam-modulated power amplifier mmic Text: RTPA5250-130 3.3V UNII Band Power Amplifier MMIC/Switch Module for WLAN Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information	Original	RTPA5250-130 RTPA5250-130 RTPA5250-78 RTPA5250-130, 288mA, 320mA, DIVERSITY MODULE MURATA raytheon ltcc 78-S11 RAYTHEON murata ltcc grm39 MAXB68 16qam-modulated power amplifier mmic	PDF
CAPACITOR SM Abstract: S11V ID11 CL10B103KBNC LL1608-FS27NJ SGL-0263 S12vs inductor manufact Text: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as	Original	SGL-0263 SGL-0263 EDS-101502 CAPACITOR SM S11V ID11 CL10B103KBNC LL1608-FS27NJ S12vs inductor manufact	PDF
Untitled Abstract: No abstract text available Text: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as	Original	SGL-0263 SGL-0263 EDS-101502	PDF
f4316 Abstract: F4319F MGF4319F Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	F4310F F4316F F4319F f4316 F4319F MGF4319F	PDF
mitsubishi microwave Abstract: MGF1601 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and	OCR Scan	MGF1601B mitsubishi microwave MGF1601	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A , GaAs OUTLINE DRAWING F E T w ith an N-channel schottky U n it: m illim e te rs inches gate, is designed fo r use in U H F band am plifiers. FEATURES	OCR Scan	GF0904A 15dBm	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> \| M G F0906B \| _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES	OCR Scan	F0906B 37dBm	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 37V 404S 1 4 .0 — 14.5G H z BAND SW INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	2400m	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)	OCR Scan	MGF0909A MGF0909A, 38dBm 20dBm	PDF
ha 1406 ha Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package	OCR Scan	MGF1801B MGF1801B, ha 1406 ha	PDF
Untitled Abstract: No abstract text available Text: De \| aiBMb^B □ DO DOS S L Transistor Absolute Maximum Ratings CaseTemperature*25°C -Symbols Features v • Usable to 4 GHz • Rugged Hermetic Package V .c b o . VcEO - V ebo Description . Ic Pt The SCA 0 0 0 5 is a small signal NPN RF-UHF silicon bipolar transistor, With ft—2.2 GHz, the device is	OCR Scan		PDF

Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U nit; n il lt r FEATURES • • Class A operation	OCR Scan	MGF0907B GF-21	PDF

S22VS Search Results

S22VS Price and Stock

Nexperia PTVS22VS1UR,115

Nexperia PTVS22VS1UTR-QX

Nexperia PTVS22VS1UTR,115

Hirose Electric Co Ltd PS2-2VS-42C

Rochester Electronics LLC PTVS22VS1UR-8X

S22VS Datasheets Context Search

MMIC SWITCH

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DIVERSITY MODULE MURATA

CAPACITOR SM

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f4316

mitsubishi microwave

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ha 1406 ha

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