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    B2B DIODE Search Results

    B2B DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    B2B DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Bluelab SDK

    Abstract: 2022-1-B2B Bluelab BlueCore02 BlueGiga 2022-1 BlueCore 3 Command CSR BLUECORE VIRTUAL MACHINE bluetooth transmitter receiver parallel chip THor 72 qualcomm msm
    Text: WRAP THOR 2022-1-B2B D a t a S h e e t V e r s i o n M o n d a y , 2 . 0 J u n e 0 6 , 2 0 0 5 Copyright 2000-2005 Bluegiga Technologies All rights reserved. Bluegiga Technologies assumes no responsibility for any errors, which may appear in this manual. Furthermore, Bluegiga Technologies reserves the right to alter the hardware,


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    2022-1-B2B O2630 Bluelab SDK 2022-1-B2B Bluelab BlueCore02 BlueGiga 2022-1 BlueCore 3 Command CSR BLUECORE VIRTUAL MACHINE bluetooth transmitter receiver parallel chip THor 72 qualcomm msm PDF

    Untitled

    Abstract: No abstract text available
    Text: PM6613N 2 to 4-cell Li-Ion, Li-FePO4 battery charger with SMBus interface, N-channel RBFET and BATFET MOSFET selectors Datasheet - production data Applications • Mobile PC: – UMPC/MID and tablets – Netbook and notebook computers Description VFQFPN 3x3 20L


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    PM6613N PM6613N DocID024974 PDF

    quanta

    Abstract: foxconn DD0ZL1LC301 ICH4 MTW355 USBP220 RN901
    Text: 1 2 3 4 5 6 7 8 5VPCU 5V / 3.3V / 12V 3V_ALWAYS Page : 10 +12V Centrino CLOCK GEN CYPRESS CY28346-2 Page : 10 +5V 3V_S5 INTEL Mobile_479 CPU CLOCK S/S ICS *IC91718 A 5V_S5 3VSUS Page : 10 HOST BUS 400MHz CLK_SDRAM0~5, CLK_SDRAM0~5# 2.5VSUS Page : 10 Page : 2 , 3


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    CY28346-2 M11-P IC91718 400MHz 333MHZ 82855GME 31ZL1MB0004 quanta foxconn DD0ZL1LC301 ICH4 MTW355 USBP220 RN901 PDF

    quanta

    Abstract: dd0zl1lc107 foxconn USBP411 LM358ADR2 PC97551 20493-21 socket 479 intel 855gme PC491 MONTARA-GME KESTREL
    Text: 1 2 3 4 5 6 7 8 5VPCU 5V / 3.3V / 12V 3V_ALWAYS Page : 10 +12V Centrino CLOCK GEN CYPRESS CY28346-2 +5V Page : 10 3V_S5 INTEL Mobile_479 CPU CLOCK S/S ICS *IC91718 A 5V_S5 3VSUS Page : 10 HOST BUS 400MHz CLK_SDRAM0~5, CLK_SDRAM0~5# 2.5VSUS Page : 10 Page : 2 , 3


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    CY28346-2 M11-P IC91718 400MHz 333MHZ 82855GME 31ZL1MB0004 quanta dd0zl1lc107 foxconn USBP411 LM358ADR2 PC97551 20493-21 socket 479 intel 855gme PC491 MONTARA-GME KESTREL PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS25910 www.ti.com SLUSAR6A – SEPTEMBER 2012 – REVISED SEPTEMBER 2012 3-V to 20-V High-Current Load Switch with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 provides highly integrated hot-swap


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    TPS25910 QFN16 TPS25910 PDF

    TPS3700DDC

    Abstract: TPS25910RSAR
    Text: TPS25910 www.ti.com SLUSAR6C – SEPTEMBER 2012 – REVISED MAY 2013 3-V to 20-V High-Current Load Switch with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 provides highly integrated hot-swap power management and superior protection in


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    TPS25910 QFN16 E169910 TPS25910 TPS3700DDC TPS25910RSAR PDF

    TPS3700DDC

    Abstract: No abstract text available
    Text: TPS25910 www.ti.com SLUSAR6A – SEPTEMBER 2012 – REVISED SEPTEMBER 2012 3-V to 20-V High-Current Load Switch with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 provides highly integrated hot-swap


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    TPS25910 QFN16 TPS25910 TPS3700DDC PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS25910 www.ti.com SLUSAR6B – SEPTEMBER 2012 – REVISED MARCH 2013 3-V to 20-V High-Current Load Switch with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 provides highly integrated hot-swap power management and superior protection in


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    TPS25910 TPS25910 QFN16ti PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS25910 www.ti.com SLUSAR6D – SEPTEMBER 2012 – REVISED JANUARY 2014 6.5-A, 20-V Integrated Hotswap with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 device provides highly integrated hotswap power management and superior protection in


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    TPS25910 TPS25910 PDF

    NMF3000

    Abstract: No abstract text available
    Text: NMF3000, NMF3010 Dual−Stage, Differential Lines Filter with ESD Protection The NMF3000 and the NMF3010 are a dual−stage, differential line ESD and filtering protection scheme for input signals into portable devices. The NMF3000 is the first stage and is located at or very near


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    NMF3000, NMF3010 NMF3000 NMF3010 NMF3000/D PDF

    B2B diode

    Abstract: NMF3000 NMF3010FCT1G NMF3000FCT1G NMF3010 B-500 diode 499AF
    Text: NMF3000, NMF3010 Dual−Stage, Differential Lines Filter with ESD Protection The NMF3000 and the NMF3010 are a dual−stage, differential line ESD and filtering protection scheme for input signals into portable devices. The NMF3000 is the first stage and is located at or very near


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    NMF3000, NMF3010 NMF3000 NMF3010 NMF3000/D B2B diode NMF3010FCT1G NMF3000FCT1G B-500 diode 499AF PDF

    philips pin diode

    Abstract: B2B diode philips Schottky diode Philips diode BAT56 Diode, Schottky, SOD123
    Text: N AMER P H I L I P S / D I S C R E T E bTE Philips Semiconductors bbSBTBl □02b'i?3 • Low leakage current • Low turn-on and high breakdown voltage • Ultra-fast switching speed. I APX Preliminary specification Schottky barrier diode FEA TU RES b2b BAT56


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    02bti BAT56 OD123 philips pin diode B2B diode philips Schottky diode Philips diode BAT56 Diode, Schottky, SOD123 PDF

    LH1514

    Abstract: solid-state DRIVE ACCESS CONTROL
    Text: A T & T Mi''.EC I C L4E D • 005002b 000^050 b2b MA TT E! Preliminary Data Sheet = ' = ? Microelectronics LH1514 — 2 Form A, High-Frequency Solid-State Relay Features Parameter Load Voltage Load Current Typical R on Description LH1514 15 150 5 Units


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    005002b LH1514 005002E, LH1514 solid-state DRIVE ACCESS CONTROL PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER P H IL IP S /D IS C R E T E bTE D b b S B ^ l □Q2b‘173 b2b • APX Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current BAT56 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT 60 V • Ultra-fast switching speed.


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    BAT56 PDF

    HFE4807

    Abstract: HFE4846 HFE4848 hfe4811 hfd3801 HFD3805 hfe4053 HFD-3000 HFD3850 HFD3882
    Text: HONFYIIIFLL I N C / h u il« y W e il MICRO 5SE » • M 5S 1A 30 0D lS b2b ^23 H H O N 1 CONNECTORIZED C O M K U iN tiN io ■"T-Hi-<r>7 SMA Low-Profile Style SMA-LP LEDs and Integrated Transmitters The SMA-LP devices consist of a Base Part mounted in a Metal SMA Low Profile style connector. LEDs and integrated


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    HFE4807 HFE4000 HFE4846 HFE4848 hfe4811 hfd3801 HFD3805 hfe4053 HFD-3000 HFD3850 HFD3882 PDF

    4VQ09CT

    Abstract: 4VQ09CTF 4VQ10CT 4VQ10CTF 100V schottky diode
    Text: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4 .4 A / 9 0 ~ 1 0 0 V 6.71264 * 6.4 .252)' ,5-35(.211). 2.38MAX 1.094) FEATURES •TO-251AA Case 2.38MAX (.094) ll.27i.05) Im a x n o TO-252AA Case, Surface Mount Device 6.22Í.245) 5.98Í.235) 0.9Í.035)


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    4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF O-251AA O-252AA 38MAX 38MAX 58MAX 4VQ10CTF 100V schottky diode PDF

    5b2 diode

    Abstract: specification diode BY 127 diode BY 127 SPECIFICATION BB130 diode
    Text: Philips Semiconductors Product specification AM variable capacitance diode BB130 FEATURES • Matched to 3% k • Leaded plastic package • C28: 18 pF; ratio: 27. - ' - 1 3 -Ih MAM222 APPLICATIONS Fig. 1 Simplified outline {SOD69; TO-92 variant and symbol.


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    BB130 BB130 MAM222 01GS31S 5b2 diode specification diode BY 127 diode BY 127 SPECIFICATION diode PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICON» SECTOR rn H A R R IS <1J S E M I C O N D U C T O R bâE » • M3QEE71 GDSDmb TIT ■ HAS RUHUT0040, HUHUIUUbU RURU1Û060 100A, 400V - 600V Ultrafast Diodes December 1993 Features Package J E D E C S T Y L E S IN G L E L E A D TO-218 TO P VIEW


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    M3QEE71 RUHUT0040, O-218 RURU10060 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12096/A International SRectifier sd700c .l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features • W ide cu rre n t range ■ High voltage ratings up to 4500V ■ High surge current ca p a bilitie s ■ Diffused junction ■ H ockey Puk version


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    12096/A sd700c -200A D-125 SD700C. 10-Thermal D-126 PDF

    5167PBTL

    Abstract: T6969 YC-160R CN52 T6969-A JEITA-RC9131 T7093A VR51 ZWS240PAF T7094
    Text: DENSEI-LAMBDA ZW S240PAF Series INSTRU CTIO N M ANUAL ZWS240PAF Series Instruction Manual BEFORE USING THE POWER SUPPLY UNIT Pay attention to all warnings and cautions before using the unit. Incorrect usage could lead to an electrical shock, damage to the unit or a fire hazard.


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    ZWS240PAF 5167PBTL T6969 YC-160R CN52 T6969-A JEITA-RC9131 T7093A VR51 T7094 PDF

    IXSN35N120

    Abstract: No abstract text available
    Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings


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    35N120AU1 OT-227 IXSN35N120AU1 4bflb22b IXSN35N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5Ü GEC PLESSEY o c to b e riq q g S E M I C O N D U C T O R S DS4178-3.6 DNB61 RECTIFIER DIODE APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS VRRM 2500V lF Av, 2880A U 32000A ■ Welding. ■


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    DS4178-3 DNB61 2000A DNB61 D0200AD. PDF

    tp 192

    Abstract: No abstract text available
    Text: 102b672 00G2432 T6E TH 7999A DRIVE CLOCK SEQUENCER FOR TH 7871 AND TH 7371 CCDs DESCRIPTION TH 7999A drive clock sequencer and TV synchronization generator is dedicated to TH 7871 and TH 7371 CCD sen­ sors. It delivers all the necessary logic CMOS level and


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    102b672 00G2432 000E447 Q00244â GGQ24SD TH7999AVW. tp 192 PDF

    BSM200GA100D

    Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
    Text: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


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    fl23SbD5 BSM200GA100D GA100D C67076-A2001-A2 SII00253 SII00254 BSM200GA100D bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 stt25 PDF