all 2084
Abstract: CE-2054 ce-208 CE-2084 CE-2074 CE-2094 ISO8802-3 200TYP
Text: 1/1 001-03 / 20030305 / ea383_ce_20.fm Power Supplies CE-20 Series DC to DC Converters Insulation Type For LAN ISO8802-3 10BASE2/5 SHAPES AND DIMENSIONS 4 3 4- 0.49±0.1 1 2 4 3 27.5max. 2 38max. 15.24±0.2 1 22max. 4- 0.49±0.1 15.24±0.2 36max. Insulation
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CE-20
ISO8802-3
10BASE2/5
22max.
38max.
36max.
14max.
CE-2054,
CE-2084
200mA,
all 2084
CE-2054
ce-208
CE-2084
CE-2074
CE-2094
200TYP
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CE-2054
Abstract: CE-2084 ce-208 CE-2074 CE-2094 ISO8802-3 15242 2094
Text: 1/1 DC-DCコンバータ 絶縁型LAN用ISO8802-3 10BASE2/5 RoHS指令対応製品 CE-20 シリーズ 形状・寸法 4 3 1 2 4 3 27.5max. 2 22max. 1 4- 0.49±0.1 15.24±0.2 38max. 4- 0.49±0.1 15.24±0.2 36max. 絶縁板 27.94±0.2 3min. 絶縁板 14max.
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LANISO8802-3
10BASE2/5
CE-20
22max.
38max.
36max.
14max.
CE-2054
CE-2074
CE-2084
CE-2054
CE-2084
ce-208
CE-2074
CE-2094
ISO8802-3
15242
2094
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ce-208
Abstract: No abstract text available
Text: 1/1 DC to DC Converters Insulation Type, For LAN, ISO8802-3 10BASE2/5 Conformity to RoHS Directive CE-20 Series SHAPES AND DIMENSIONS 4- 0.49±0.1 3 1 2 4 3 27.5max. 4 4- 0.49±0.1 15.24±0.2 2 38max. 22max. 1 15.24±0.2 36max. Insulation 27.94±0.2 3min.
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ISO8802-3
10BASE2/5
CE-20
36max.
38max.
14max.
22max.
200mA,
CE-2074
ce-208
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L01Z300S05
Abstract: L01Z050S05 L01Z200S05 200at L01Z400S05 L01Z L01Z100S05 L01Z150S05 L01Z500S05 L01Z600S05
Text: NEW CURRENT SENSORS L01Z TYPE ● 供給電源＋5V ● Power ● オンボードタイプ ● On-board supply : ＋5V type ● Compact, light weight, standardized from 50AT up to 600AT ● 小型軽量で50AT~600ATまで標準化 •仕様 SPECIFICATIONS
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600AT
50AT600AT
RL10k,
L01Z050S05
L01Z100S05
L01Z150S05
L01Z200S05
L01Z300S05
L01Z400S05
L01Z500S05
200at
L01Z
L01Z600S05
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tdk ce series
Abstract: all 2084 TDK ce series converter CE-2084 A383 CE-2054 CE-2074 CE-2094 ISO8802-3
Text: A383_CE_20 1/1 TDK DC-DC Converter Insulation type, For LAN ISO8802-3 10BASE2/5, 1-year warranty period CE-20 SERIES SPECIFICATIONS AND STANDARDS PART NO. CE-2054 CE-2074 Maximum output power W 1.8 1.8 INPUT CONDITIONS Input voltage Edc V 4.5 to 5.5 10 to 15.75
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ISO8802-3
10BASE2/5,
CE-20
CE-2054
CE-2074
CE-2054,
tdk ce series
all 2084
TDK ce series converter
CE-2084
A383
CE-2054
CE-2074
CE-2094
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.
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GP200MHB12S
DS4339-4
190ns
840ns
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HFA1C-300
Abstract: HFP2-20 HFP2 HFP2-05 HFA1C-50 HFP2-03 HFA1C HFA1-50 HFA1C-150 L03S
Text: CURRENT SENSORS 電流センサ A SERIES L / K SERIES HFP2 SERIES P7 / P7M SERIES P6 SERIES L03S TYPE NEW L08P TYPE NEW L10P TYPE NEW L16P TYPE NEW L01Z TYPE NEW HFA1 / HFA1C SERIES MCS SERIES 1 CURRENT SENSORS 電流センサ •用途 USAGE UPS インバータ
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0300A
002000A
200kHz
30mA30A
B-9013-2
HFA1C-300
HFP2-20
HFP2
HFP2-05
HFA1C-50
HFP2-03
HFA1C
HFA1-50
HFA1C-150
L03S
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srw13ep
Abstract: tdk SRW SRW42EC SRW13EPC SRW28ECF SRW3020ED5 SRW25SEC4-V SRW28EC SRW transformers SRW28LEC
Text: 6355_SRW 1/9 Transformers SRW Series (General Transformers) For Power Supply Pin Terminal GENERAL TRANSFORMERS STANDARD PRODUCTS Shapes and Dimensions Fig. No. 1-1 1-2 1-3 1-4 1-5 1-6 1-7 1-8 1-9 1-10 1-11 1-12 1-13 1-14 1-15 1-16 1-17 1-18 1-19 1-20 1-21
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SRW13ES
SRW16ES
SRW19ES
SRW25SEC
SRW2820ED-1
SRW2820ED-2
SRW2820ED-3
SRW2924ED
SRW2929ED
srw13ep
tdk SRW
SRW42EC
SRW13EPC
SRW28ECF
SRW3020ED5
SRW25SEC4-V
SRW28EC
SRW transformers
SRW28LEC
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SRW42EC
Abstract: ferrite core transformer calculation formula how to calculate ferrite core transformer SRW13EPC srw13ep SRW16ES4-H SRW16ES srw19epc SRW19ES SRW2820ED-3
Text: 6355_SRW 1/15 Transformers SRW Series For Power Supply Pin Terminal (General Transformers, Barrierless Transformer ) GENERAL TRANSFORMERS, BARRIERLESS TRANSFORMER® The SRW series transformer for switching power supplies utilizes ferrite materials, which makes it possible to achieve an incredibly
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AN4502
Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Text: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS
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GP200MLK12
GP200MKS12
DS5448-1
AN4502
AN4503
GP200MKS12
GP200MLS12
IGBT 200A 1200V application induction heating
DIODE 10V 10mA
AN5190
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GP350MHB06S
Abstract: No abstract text available
Text: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base
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GP350MHB06S
DS4923-6
GP350MHB06S
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GP250MHB06S
Abstract: IGBT 3300V 250A
Text: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4325 -7.0 FEATURES DS4325-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25 ■
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GP250MHB06S
DS4325
DS4325-7
GP250MHB06S
IGBT 3300V 250A
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6 uH 1.5a
Abstract: No abstract text available
Text: RoHS EP10 HIGH FREQUENCY PoE TRANSFORMERS Designed for Power over Ethernet Applications EP10 Core Design 7~10 Watt Power Rating Available 8 Pin SMD Operating Temperature -40ºC to +85ºC Custom Designs Available Part Turns Ratio Application Number Pri. Sec.
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AEP311SI
AEP312SI
AEP316SI
AEP351SI
AEP355SI
AEP358SI
AEP331SI
AEP335SI
AEP339SI
AEP340SI
6 uH 1.5a
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dynex gp250mhb06s
Abstract: GP250MHB06S
Text: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 FEATURES DS4325-6.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25
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GP250MHB06S
DS4325
DS4325-6
GP250MHB06S
dynex gp250mhb06s
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GP250MHB06S
Abstract: No abstract text available
Text: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4325 -7.0 FEATURES DS4325-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25 ■
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GP250MHB06S
DS4325
DS4325-7
GP250MHB06S
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Untitled
Abstract: No abstract text available
Text: Uniti m P—ZIP24—475—1.27 3, 05±0 2 OJ x o c +1 r-. r-. o o cu II cu o +i o . 0, 835TYP 1, zi 0, 5±0, 1 ei0O , 25CM .n o +i in o, 25 - 8: ¿5 2, 54 31, 38MAX 30, 88±0, 2 K12 w t w t w w y 24 Nov,2003
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P-ZIP24-475-1
835TYP
38MAX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608
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TC5164
805AJ/AFT/AJS/AFTS-40
805AJ/AFT/AJS/AFTS
32-pin
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Untitled
Abstract: No abstract text available
Text: rahm • P a c k a g e Available Appearance Board length mm Lead specs, (mm) Compatible with automatic placement and reflow soldering. Chip-on-board available. Pin-to pin pitch: 0.8mm Pins 28 and 52 Single in-line (SIP) p 2.54 s (2.0) (0.8) W1 0.5±0.1 0.4 ±0.1
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10Min.
90Max.
38Max.
15Min.
14Min.
48Max.
18Min.
80Max.
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14Min
Abstract: N11C 52 ra
Text: A < 7>j y K »C/Hybrid ICs /n° y *T — v t t i i / P a c k a g e 'J - S JU <>4±l t p 2.54 s 2.0 W1 0.5±0.1 W2 1.4± 0.2 1.8 (0.8) 0.4+0.1 1.1±0.2 mV ¥ fi JU 1.27 2.54 1.8 ft L/ JM L (4-0) W1 0.5±0.1 0.5±0.1 0.5±0.1 W2 1.4+0.2 1.3±0.2 i L* B * &
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10Min
38Max.
15Min.
87Max.
14Min.
48Max.
80Max.
18Min.
45Max.
14Min
N11C
52 ra
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ROHM Bx
Abstract: 0.4mm pitch qfp
Text: Hybrid ICs ROHM Hybrid ICs • ROHM hybrid ICs are of five types so that the customer can make a selection depending on the necessary degree of integration, operating conditions, price, and time for delivery: 1) BX series ICs, transistors, diodes, resistors and capacitors are
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90Max.
80Max.
45Max.
180Max.
140Max.
ROHM Bx
0.4mm pitch qfp
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mxj connector
Abstract: mxj 5 connector
Text: SD~5 1323-0 06 PA RT NAME tt± c r FINISH i^ s ¡Ç -JG i C -J L jr a ;o j3 j J !1L i i i » h I J i » h /«S /Itu / 'i x 7— c e U L 94 V -0 f LIQ UID C R Y S Y A L POLYMER G L A S S F I L L E D , NAT URAL WHITE), U L 9 4 V - 0 R E C E R T A C L E COVER
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UL94V-
UL94V-0
ul94v-Ã
SD-51323-008
EN-02JI097)
MXJ-54
mxj connector
mxj 5 connector
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"MOSFET Modules"
Abstract: MOSFET Modules 2MI100F-025 2MI50F-050 2MI100F-050 MOSFET Modules 250V 500V SaaflVTE T-Vl FUJI 2MI50S-050 200GO 2MI200F-025 6MI15FS-050
Text: FU JI [ l'î U M Q Ï Ï jS O E COL LMER S E M I C O N D U C T O R INC MAE D ICOL M O S FE T M o d u les 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS
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20kHz)
240VAC
20kHz
25-35kg-cm
"MOSFET Modules"
MOSFET Modules
2MI100F-025
2MI50F-050
2MI100F-050
MOSFET Modules 250V 500V SaaflVTE T-Vl FUJI
2MI50S-050
200GO
2MI200F-025
6MI15FS-050
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SOJ32-P-400-1
Abstract: TC558128BJ
Text: T O S H IB A TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-12
372-WORD
TC558128BJ/BFT
576-bit
SQJ32-P-400-1
38MAX
32-P-400-0
SOJ32-P-400-1
TC558128BJ
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AB-19
Abstract: No abstract text available
Text: 9111 Series □upiin Hard Metric Connector Male Type AB-19 M aterial: Housing: 30% Glass Filled PBT Contacts: Phosphor Bronze. UL94V-0. E lectrical C haracteristics: Insulator Resistance: 1000M £2 min. Contact Resistance: 20m Q max. Operating Temperature: -550C~+1250C.
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AB-19
UL94V-0.
1000M
-38Maxr-
AB-19
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