DIN 46238
Abstract: No abstract text available
Text: MOSAIC SEM IC ONDUCTOR INC S3E D b3S337T 0001370 ÔT1 IMOC 7 ^*4 6 -a s -1 \ molate f M e g x 4 M o n o tith ic D R A M Mosaic Semiconductor MDM41000-80/10/12/X0179 Issue 1.0: September 1992 ADVANCE PRODUCT INFORMATION 1,048,576 x 4 CMOS High Speed Dynamic RAM
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b3S337T
MDM41000-80/10/12/X0179
MIL-STD-883
00013flD
MDM41000WMB-80/X0179
MIL-STD-883,
DIN 46238
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Untitled
Abstract: No abstract text available
Text: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These
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2/67/77F16006/A-80/90/12/15
512Kx32,
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Untitled
Abstract: No abstract text available
Text: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is
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PUMA67E1001/A-90/12
ThePUMA67E1001/AisalMbitCMOS
of90and
MIL-STD-883orD0
MIL-STD-883
32Kx32
as64Kx
16and
128Kx8
PUMA67
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Untitled
Abstract: No abstract text available
Text: 1Meg x 4 Monolithic DRAM m o l a t e MDM41000-80/10/12 Issue 3.3 : October 1993 S e m ic o n d u c to r 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ± 10% 1024 Refresh Cycles 16 ms CAS before RAS Refresh
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MDM41000-80/10/12
b3S3371
00053m
MDM41000WMB-10
MIL-STD-883,
MIL-STD-883
b3S337T
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Untitled
Abstract: No abstract text available
Text: 512K X 8 SRAM molaic MS8512FK-45/55 Issue 3.1 : September 1993 S e m ic o n d u c to r Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55 ns JEDEC Standard 32 pin DIL footprint Operating Power 1050 mW typ. Low Power Standby
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MS8512FK-45/55
000223k.
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO
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b35337^
800jiW
MS8256RKXAL
100ns
120ns
150ns
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V
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b35337T
D001B3fl
700mW
20jiW
MIL-STD-883
MSM8256-4
MSM8256SLMB-45
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LM 7420
Abstract: No abstract text available
Text: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are
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MFM8516
b3S337T
002Lic
MFM8516GMB-80E
MIL-STD-883
512Kx
b35337T
LM 7420
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7420 ic details
Abstract: pin diagram ic 7420 IC 7420 function ic 4026 IC 4026 pin diagram 7420 ic
Text: 32K X 8 EEPROM mosaic MEM832-20/25 Issue 4.1 : June 1996 semiconductor, inc. 32,768 x 8 Non-volatile CMOS EEPROM Description The MEM832 is a 262,144 bit Non-Volatile CMOS EEPROM organised as a 32K x 8 with access times of 200 or 250 ns. The device features hardware and software data
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MEM832
MILSTD-883.
MEM832-20/25
b353371
MEM832VLMB-20
0002b0?
7420 ic details
pin diagram ic 7420
IC 7420
function ic 4026
IC 4026 pin diagram
7420 ic
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ci 7420
Abstract: No abstract text available
Text: mosaic 128Kx 32 FLASH MODULE PUMA2F4001-15/17/20 Issue4.0: July 1995 semiconductor, inc. Description 4,194,304 bit CMOS FLASH Memory Module The PUMA 2F4001 is a 4 M b it CMOS 5.0V only FLASH memory in a 66 pin ceramic PGA pack age, which is configerable as 8 , 1 6 , 3 2 bit wide
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PUMA2F4001
150ns,
170nsand
200nsareavailable
128Kx
PUMA2F4001-15/17/20
b3S337c
00D24bl
PUMA2F4001MB-15
ci 7420
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02VO
Abstract: T 1892 equivalent
Text: MOSAIC SEMICONDUCTOR INC 4fc.E D b 3 S 3 3 7 ci o c i a i c m mofaic o b im o c 128KX0 SRAM MSM8128X-45/55/70 Issue 3.1: April 1992 Mosaic Semiconductor f Pin Definition Inc. 131,072 x 8 CMOS High Speed Static RAM Features NC A16 A14 1 2 3 A12 4 5 A7 A6 A5
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b3S337c
128KX0
MSM8128X-45/55/70
MIL-STD-883D
CA92121
02VO
T 1892 equivalent
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Untitled
Abstract: No abstract text available
Text: 128Kx 32 FLASH Module molaic PUMA 2F4001 -12/15/20 Issue 1.1 rNovember 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 4,194,304 bit CMOS FLASH Memory Pin Definition Features 1 o 08 o 09 o 010 o A14 o A16 o A11 o Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.
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128Kx
2F4001
103Cycles
MIL-STD-883
b3S337T
2F4001-12/15/20
2F4001MB-20
MIL-STD-883C
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC B 3E D • bBSBBTI G001222 Ibfl ■ HOC T~- H 6 mol aie Í2 8 K X 8 Y SRAM MSM8128X-85/10/12 Issue 3.0 : October 1992 Mosaic Sem iconductor f Pin Definition NC A16 A14 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GNO 131,072 X 8 CMOS High Speed Static RAM
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G001222
MSM8128X-85/10/12
MIL-STD-883
32pin0
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Untitled
Abstract: No abstract text available
Text: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.
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MFM8T516-90/12/15
MFM8T516
0002b42
MFM8T516SMB-90
MIL-STD-883.
8T516
512Kx
b3S3371
00D2b43
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d2539
Abstract: D1959 A3S33 al puma
Text: MOSAIC S E M I C O N D U C T O R INC 40E D EB a3S33?T 0 0 0 0 S 7 7 4 ^jNOC 7 ^ V 6 -/? - 2 ? PUMA 2U400Q PUMA 2U4000-90/12/15 Issue 1.0 : November 1990 Mosaic Samtconduclor Inc. ADVANCE PRODUCT INFORMATION /" ~ ' Pin Definition 4,194,304 bit CMOS High Speed UV EPROM
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a3S33
2U400Q
2U4000-90/12/15
2U4000MB-12
U4000
128Kx32
CA92121
2714S6S
d2539
D1959
al puma
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Untitled
Abstract: No abstract text available
Text: MOSAI C S E M I C O N D U C T O R INC 53E ]> • b 3 S 3 3 7 T 0 G D 1 2 4 5 7b£ B I M O C 256 K x 8 SRAM moXaic MS8256RKX A-55/70 Issue 1.0 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition
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MS8256RKX
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Untitled
Abstract: No abstract text available
Text: 4Meg x 1 Monolithic DRAM molate M DM 14000-80/10/12 Issue 3.2 : September 1993 S e m ic o n d u c to r 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP,20 & 24 Pin VIL 5 Volt Supply ±10% 1024 Refresh Cycles 16 ms
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MIL-STD-883
14000VM
MIL-STD-883
00QE331
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \
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67S4000-85/10/12
MIL-STD-883
S4000
128Kx32
256Kx16
512Kx8)
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PDF
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Untitled
Abstract: No abstract text available
Text: / 2^ < ^ mosaic P U M A 2U4000 PUMA2U4000-12/15 semiconductor, inc. Issue4.1 : June 1995 Description 4,194,304 bit CMOS UV EPROM The PUMA2U4000 is a 4 M bit CMOS High Speed UV EPROM in a 66 pin PGA package with access ti mes of 120ns and 150ns. The output width is userconfigerable a s 8 ,16 or 32
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2U4000
PUMA2U4000-12/15
PUMA2U4000
120ns
150ns.
MIL-STD883.
PUMA2U4000MB-12
U4000
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Untitled
Abstract: No abstract text available
Text: mosaic 32K X 32 SRAM MODULE semiconductor, inc. PUMA 2S1000-12/15 Issue 4 .2 : June 1996 Description The PUMA 2S1000 is a 1Mbit high speed static RAM organised as 32K x 32 in a 66 pin PGA package. Access times of 120ns or 150ns are available. The devices has a user configurable
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2S1000-12/15
2S1000
120ns
150ns
MIL-STD-883.
b3S337T
2S1000LMB-12
128Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: 512K X 8 SRAM Module molaic PUMA 67S16000-35/45/55 Issue 1.0 : May 1994 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 16,777,216 bit CMOS High Speed Static RAM g S < S! 3 3 sÜS fls fe S S 3 3 5 I Features Fast Access times of 35/45/55 ns.
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67S16000-35/45/55
MIL-STD-883
S16000
512Kx32
D0G5547
CA92121
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC 4DE D O b3S33?T 0000443 S HMOC T -4 Ù -J 3 -2 7 32K X 8 EEPROM MEM832V/J-85/10/12 Issue 1.0 : February 1990 ADVANCE PRODUCT INFORMATION Pin Definitions 32,768 x 8 CMOS EEPROM Features A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Very Fast Access Times of 85,100,120 ns
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b3S33
MEM832V/J-85/10/12
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PDF
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TEESV
Abstract: D8-14 2F1600 in1010
Text: 512K x 32 FLASH MODULE molate PUM A 2 F 16000- 15/ 20/25 Issue 1.1 : May 1994 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc 16,777,216 bit CMOS FLASH Memory Module Features Fast Access Times of 150/200/250 ns. 66 pin Ceramic PGA Package. User Configurable as 32 /16 / 8 bit wide.
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10jis
MIL-STD-883,
A0-A18-
512Kx8
b3S337T
2F16000-15/20/25
2F16000MB-15
MIL-STD883
16Mbit,
TEESV
D8-14
2F1600
in1010
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PDF
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pinout 7420
Abstract: No abstract text available
Text: 128Kx 32 EEPROM Module mosaic PUMA67E4005/A-15/17/20 Issue4.0 : October 1995 semiconductor, inc. Description 4 ,1 9 4 ,3 0 4 bit CMOS EEPROM Module The P U M A 6 7 E 4 0 0 5 /A is a 4M b it CMOS EEPROM module organised as 128k x 32 in a 6 8 pin JEDECJleaded Ceramic Surface Mount Substrate. The output
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PUMA67E4005/A
200ns.
MIL-STD-19
PUMA67E4005/A15/17/20
PUMA67E4005AMB-15
150ns
170ns
MIL-STD-883.
128Kx32
512Kx8
pinout 7420
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