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    Untitled

    Abstract: No abstract text available
    Text: 1Meg x 4 Monolithic DRAM m o l a t e MDM41000-80/10/12 Issue 3.3 : October 1993 S e m ic o n d u c to r 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ± 10% 1024 Refresh Cycles 16 ms CAS before RAS Refresh


    OCR Scan     		MDM41000-80/10/12 b3S3371 00053m MDM41000WMB-10 MIL-STD-883, MIL-STD-883 b3S337T PDF

    Untitled

    Abstract: No abstract text available
    Text: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.


    OCR Scan     		MFM8T516-90/12/15 MFM8T516 0002b42 MFM8T516SMB-90 MIL-STD-883. 8T516 512Kx b3S3371 00D2b43 PDF

    d2539

    Abstract: D1959 A3S33 al puma
    Text: MOSAIC S E M I C O N D U C T O R INC 40E D EB a3S33?T 0 0 0 0 S 7 7 4 ^jNOC 7 ^ V 6 -/? - 2 ? PUMA 2U400Q PUMA 2U4000-90/12/15 Issue 1.0 : November 1990 Mosaic Samtconduclor Inc. ADVANCE PRODUCT INFORMATION /" ~ ' Pin Definition 4,194,304 bit CMOS High Speed UV EPROM


    OCR Scan     		a3S33 2U400Q 2U4000-90/12/15 2U4000MB-12 U4000 128Kx32 CA92121 2714S6S d2539 D1959 al puma PDF