BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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3N157
Abstract: 2n3994 EQUIVALENT 2N3994 2N3993 MHQ2906 2N3993A 3N158 MPQ2906 MPQ3303 T735
Text: MO TOROLA SC {XSTRS/R Fl Tt. 6367254 MOTOROLA SC MPQ2906, 2907 XSTRS/R b3L75SM QOfiS^fl 3 96D F ~ T - H 3 - 3 iS For Specifications, See MHQ2906 Data. MPQ3303 M A X IM U M R A T IN G S Value Symbol Rating _ Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage
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b3L75SM
MPQ2906,
MHQ2906
3N157
2n3994 EQUIVALENT
2N3994
2N3993
2N3993A
3N158
MPQ2906
MPQ3303
T735
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MC14094BB
Abstract: No abstract text available
Text: MOTORO LA SC -CLOGIC} Tfl DE | b3L75Sa QDTTST O 3 6367252- MOTOROLA SC LOGIC 98D 79590 D -T - MC14094B M O T O R O LA 8-STAGE SHIFT/STORE REGISTER WITH THREE-STATE OUTPUTS CMOS MSI T h e M C 1 4 0 9 4 B c o m b in e s an 8-stage s h ift re g iste r w ith a d ata
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b3L75Sa
MC14094B
MC14094BB
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Untitled
Abstract: No abstract text available
Text: MOT ORO LA SC {XSTRS/R F> ^ 6367254 MOTOROLA SC MPQ2906, 2907 XSTRS/R b3L75S M QOfiS^fl 3 96D F ~ T - H 3 - 3 i5 For Specifications, See MHQ2906 Data. MPQ3303 M A X IM U M RATIN G S Value Symbol Rating _ U nit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage
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OCR Scan
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b3L75S
MPQ2906,
MHQ2906
MPQ3303
O-116
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Untitled
Abstract: No abstract text available
Text: Order this data sheet MOTOROLA by M R F10350H /D SEMICONDUCTOR TECHNICAL DATA MRF10350H* Microwave Pulse Power Transistor 350 Watts Peak NPN 1025-1150 MHz C P T iO Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz
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F10350H
MRF10350H*
1PHX31253-1
MRF10350H/D
MRF10350H/D
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BUT35
Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS
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b3b75S4
BUT35
BUT35
THT bsc 25
transistors but35
ASX 12 D transistor
CM4050
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LZL -60-C
Abstract: transistor tip 122 show pin diagram keypad and dtmf ic power 22D regulator MC6821 PIA telephone keypad interface circuit with dtmf circuit diagram regulator avr for generator MC34010 2N3904 MC34010A
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MC34010 Advance Information ELECTRONIC TELEPHONE CIRCUIT ELECTRONIC TELEPHONE CIRCUIT Provides All Basic Telephone Station Apparatus Functions in a Single 1C, Including DTMF Dialer, Tone Ringer, Speech Network and Line Voltage Regulator
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RS-470
MC34010
b3b7S53
MDA101A,
4-1N4005
2N4126
1N5931A
1N5936A
1N750
5030BC
LZL -60-C
transistor tip 122 show pin diagram
keypad and dtmf
ic power 22D regulator
MC6821 PIA
telephone keypad interface circuit with dtmf
circuit diagram regulator avr for generator
MC34010
2N3904
MC34010A
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4170B
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process
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MCM54170B
MCM5L4170B
MCM5V4170B
54170B
MCM54170BJ70
MCM54170BJ80
MCM54170BJ10
MCM5L4170BJ70
MCM5L4170BJ80
4170B
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14017b
Abstract: C4017 C-4017 4017 motorola HC4017 IC 4017 B
Text: MOTOROLA SC {LOGIC} GE D MOTOROLA | b3b?5SS □OflOSflT 1 T- Hi -¿¿-25 SEMICONDUCTOR TECHNICAL DATA MC54/74HC4017 Decade C ounter J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM OS T h e M C 5 4 /7 4 H C 4 0 1 7 is identical in pinout to the standard C M O S M C 14017B .
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MC54/74HC4017
14017B
HC4017
HC4017.
14017b
C4017
C-4017
4017 motorola
IC 4017 B
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6306D
Abstract: MCM6306DJ-15R2 MCM6306DJ15
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6306D Product Preview 32K x 8 Bit 3.3 Volt Fast Static RAM The MCM6306D is fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks ortiming strobes, while CMOS circuitry reduces power consumption and provides for
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MCM6306D
-------------6306D
MCM6306DJ15
MCM6306DJ20
MCM6306DJ25
MCM6306DJ15R2
MCM6306DJ20B2
MCM6306DJ25R2
6306D
MCM6306DJ-15R2
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Untitled
Abstract: No abstract text available
Text: M A XIM U M RATINGS Rating Symbol Value Collector-Em itter V oltage v CEO 30 Unit V dc Collector-Base V oltage v CBO 40 V dc Em itter-Base V oltage vebo 4.0 V dc Collector Current — C o n tin u o u s ic 100 m Adc Total Device D issip atio n @ T/\ = 2 5 X
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PSH20
0103b76
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview L o w -V o lta g e C M O S D ual D - iy p e Flip -F lo p MC74LCX74 LCX W ith 5 V -T o le ran t In p u ts The MC74LCX74 is a high performance, dual D-type flip-flop with asynchronous clear and set inputs and complementary O, O outputs. It
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MC74LCX74
MC74LCX74
500ns
BR1339
500i2
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74HC125A
Abstract: 74HC126A Y410
Text: MOTOROLA SC 11E 0 I b3fc.7SS2 GDflOT53 T LOGIC T Order this data sheet by MC54JHC125A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 5 4 /7 4 H C 1 2 5 A M C 5 4 /7 4 H C 1 2 6 A Advance Information Q uad 3 -S ta te N o n in v ertin g B u ffers J SUFFIX CERAMIC
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GDflOT53
MC54JHC125A/D
MC54/74HC125A
MC54/74HC126A
LS125
LS126.
HC125A
HC126A
HC125A)
74HC125A
74HC126A
Y410
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mc14566b
Abstract: b0566
Text: M O T O R O L A SC - C L O G I O TÛ 63672S2 M O TO RO LA SC D eT | L,3b7252 DOTTflTS fl |~~ 98D L O G IC 79875 T ^ S H MC14566B MOTOROLA I N D U S T R IA L T IM E B A S E G E N E R A T O R CMOS MSI T h e M C 1 4 5 6 6 B in d u s tria l tim e b a s e g e n e ra t o r is c o n s t r u c t e d
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3b7252
63672S2
MC14566B
mc14566b
b0566
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