MEC 1300
Abstract: GI 312 NDL5300 NDL5302 NDL5302L1 NDL5302L2 NDL5310 NDL5312 NDL5314 gi diode
Text: N E C ELECTRONICS INC b2E D • b4E7S55 0030153 4flb « N E C E DATA SHEET NEC LIGHT EMITTING DIODE NDL5302L2 ELECTRON DEVICE 1 3 0 0 nm O P TICA L F IB E R COM M UN ICATIO N S InGaAsP LIG H T EM ITTING D IO D E DESCRIPTION N D L5302L2 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi
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b4E7S25
NDL5302L2
NDL5302L2
GI-50/125
NDL5302L1
NDL5300
NDL5302
NDL5310
NDL5312
MEC 1300
GI 312
NDL5314
gi diode
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uPD77230
Abstract: SICK RM pd77230
Text: N E C ELECTRONICS INC Tfi 6427525 N E C D e J LME75B5 OOlt.343 T ELECTRONICS INC 980 16343 D //P D 7 7 2 3 0 ADVANCED s ig n a l p ro c e s s o r N E C Electronics Inc. Z ' o r M a rc h 1988 Description Applications T h e /UPD77230 A d v a n c e d S ig n a l P ro c e s s o r A S P is
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LME75B5
uPD77230
/UPD77230
b427525
642752S
SICK RM
pd77230
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MC-422000F32BA-60
Abstract: MC422000F32BA60 MC-422000F32FA-60 MC422000F32FA60 MC422000F32BA70 MC422000F32
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000F32 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-422000F32 is a 2,097,152 words by 32 bits dynamic RAM module on which 4 pieces of 16 M DRAM: /¿PD4218165 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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MC-422000F32
32-BIT
MC-422000F32
uPD4218165
C-422000F32-60
C-422000F32-70
L427S25
b42752£
MC-422000F32BA-60
MC422000F32BA60
MC-422000F32FA-60
MC422000F32FA60
MC422000F32BA70
MC422000F32
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lm575
Abstract: 2SK827 transistor DK RN lm5752 F1012
Text: N E C ELECTRONICS INC "t û 6427525 N E C ELECTRONICS DEI INC b45755S 98D MOS D O n O O l 19001 F I E L D D E F F E C T ELECTRON DP/ICS 7 | T '- " 17-13 T R A N S I S T O R 2SK827 . F A S T S W I T C H I N G N - C H A N N E L S I L I C O N POW ER MOS F E T
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b4275ES
Q11DD1
2SK827
T-39-13
LM57525
DD11D04
JS71CS
J2263S
lm575
2SK827
transistor DK RN
lm5752
F1012
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Untitled
Abstract: No abstract text available
Text: E C ELECTRONICS INC Tñ D e J b4E7SE5 OOlTlbB 0 | POWER T ^ 3 '2 5 TRANSISTOR ARRA / ¿P A 1 4 5 6 H N PN S IL IC O N EP LOW I T A X I AL -POWER SPEED SWITCHING TRANSISTOR ARRA DARLINGTON DESCRIPTION The ¡1 PA1456H is an array of four darlington power transistors, it is
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PA1456H
b4E7S55
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SAS 251 B427
Abstract: No abstract text available
Text: NEC JHPD482444, 482445 4M Video RAM NEC Electronics Inc. Preliminary Information_ September 1994 Description The pPD482444 fast-page and pPD482445 hyper-page video RAMs have a random access port and a serial read/write port. The serial read/write port is connected
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uPD482444
uPD482445
pPD482444
pPD482445
8192-bit
16-bit
bM5752S
pPD482444,
jiPD482444,
SAS 251 B427
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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IC-3185B
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / /iPD42$16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D escription The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
16M-BIT
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
//PD42S16800L,
IC-3185B
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