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    B540G Search Results

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    B540G Price and Stock

    Comchip Technology Corporation Ltd CDBB540-G

    DIODE SCHOTTKY 40V 5A DO214AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDBB540-G Reel 3,000
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    • 10000 $0.2038
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    Mouser Electronics CDBB540-G
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    • 10000 $0.187
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    NAC CDBB540-G 3,000
    • 1 $0.48
    • 10 $0.48
    • 100 $0.48
    • 1000 $0.48
    • 10000 $0.204
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    Kyocera AVX Components 100B540GP500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B540GP500XT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B540GP500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B540GP500XT
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    Comchip Technology Corporation Ltd SB540-G

    Schottky Diodes & Rectifiers Schottky 5A 40V
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    Mouser Electronics SB540-G 727
    • 1 $0.64
    • 10 $0.551
    • 100 $0.382
    • 1000 $0.319
    • 10000 $0.212
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    NAC SB540-G 1,200
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    Kyocera AVX Components 100B540GP500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100B540GP500XC100
    • 1 $8.73
    • 10 $7.57
    • 100 $5.82
    • 1000 $4.94
    • 10000 $4.94
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    Kyocera AVX Components 100B540GP500XT1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B540GP500XT1K
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    • 1000 $2.64
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    B540G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRS540T3 MBRS540T3 MBRS540T3/D

    MBRS540T3

    Abstract: B540G B540 MBRS540T3G SMC 403-03 B540 diode SMC case 403
    Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRS540T3 MBRS540T3 B540G B540 MBRS540T3G SMC 403-03 B540 diode SMC case 403

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D

    B540A

    Abstract: NRVBS540 MBRS540T3G B540 diode B540-G MBRS540T3G marking code
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D B540A NRVBS540 MBRS540T3G B540 diode B540-G MBRS540T3G marking code

    B540G

    Abstract: B540 MBRS540T3 MBRS540T3G
    Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRS540T3 MBRS540T3 MBRS540T3/D B540G B540 MBRS540T3G

    Untitled

    Abstract: No abstract text available
    Text: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRS540T3G, NRVBS540T3G MBRS540T3 MBRS540T3/D