B5D113D Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
1N4740A Abstract: 1N4742A 12 volt zener diode 1N4742A 1N4732A 1N4745A ZENER 1 BZX8SC ln4744a 1N4729A 1N4730A Text: bar DO-41 1 Watt Zener Diodes Vi Volts Tolerance 5% lit (m A) D • b5D113D 003T513 757 « N S C S DO-41 1.3 Watt Zener Diodes n a t l s e p i i c o n d ( D I S C R E T E ) Zz (Ö ) •r (MÄ) (Volts) Tolerance 5% (mA) Zz m Ir (HA) 3.3 1N4728A 76 10 100	OCR Scan	DO-41 b5D113D 1N4728A BZX85C3V3 1N4729A BZX85C3V6 1N4730A BZX85C3V9 1N4731A 1N4740A 1N4742A 12 volt zener diode 1N4742A 1N4732A 1N4745A ZENER 1 BZX8SC ln4744a	PDF
BAV99 Abstract: BAW56 sot23 baw56 t22 sot23 Text: S e m ic o n d u c t o r BAW56 tß Discrete POW ER & Signal Technologies National BAW56 CONNECTION DIAGRAMS JH A1 HI SOT-23 ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 2 5'C unless otherwise noted	OCR Scan	OT-23 BAW56 BAV99 bS0113D 0040S5S BAW56 sot23 baw56 t22 sot23	PDF
PN4258 Abstract: process 65 Text: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*	OCR Scan	PN4258 MMBT4258 PN4258 D040b process 65	PDF
T3D diode Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30 Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT451N b501130 T3D diode T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30	PDF
B5G1 Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41 Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high	OCR Scan	NDP605A/NDP605B, NDP606A/NDP606B 0-1B0-534 B5G1 ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41	PDF
Untitled Abstract: No abstract text available Text: BSS64 Discrete POWER & Signal Technologies National m y y S e m i c o n d u c t o r “ BSS64 Mark: U3 NPN General Pupose Amplifier This device is designed far general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.	OCR Scan	BSS64 bS01130 bSD113G G04Cm4 b5D113D 04CH15	PDF
DIODE 5H Abstract: mmbd1201 fw sot-23 5H MARKING BD4148 MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE Diode Marking 1p SOT-23 Text: MMBD4148 I SE I CC I CA i Discrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r M M B D 4148 / SE / CC / CA FI r CONNECTION DIAGRAMS 5H TU ET M M B D 4148 M M B D 4148C C 5H Dò M M B D 4148C A M M B D 4148S E -V t + * t +* 1 D6 D4	OCR Scan	MMBD4148 OT-23 MMBD4148CA MMBD4148CC MMBD4148SE 414SSE 414SCC 4141C MMBD1201-1205 DIODE 5H mmbd1201 fw sot-23 5H MARKING BD4148 Diode Marking 1p SOT-23	PDF