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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM531622C 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit M ask ROM DESCRIPTION The OKI MSM531622C is a high-speed CMOS Mask ROM that can electrically switch between 1,048,576word x 16-bit or 2,097,152-word x 8-bit configurations. The MSM531622C operates on a single 5.0 V power


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    MSM531622C 576-Word 16-Bit 152-Word MSM531622C 576word PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The


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    MSM511002B 576-Word MSM511002B b7242HG E4240 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V4 1 OO/L/SL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4100/L /SL is a 4,194,304-word x 1-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V4100/L/SL achieves high integration, high-speed operation, and


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    MSM51V41OO/L/SL 304-Word MSM51V4100/L MSM51V4100/L/SL MSM51V4100/L/ 26/20-pin MSM51V4100L MSM51V4100SL PDF

    doc-70

    Abstract: c431a
    Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since


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    MSM27C431AZB 288-Word MSM27C431AZB 7Cf31 MSM27- C431AZB 32-pin MSM27C421ZB) doc-70 c431a PDF