Untitled
Abstract: No abstract text available
Text: MEMORY 2 x 5 1 2 K x 1 6 B IT S «•y 11Ü ■¡11 1111 9 9 A- mm ¡¡¡¡Ìli III* mm * c\ llli MB8111'* CMOS 2-BANK 524,288-WORD x 16 BITS Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu M B811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB8111'
288-WORD
B811171622A
16-bit
1171622A
171622A
F9703
MP-SDRAMM-DS-20363
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYJuly 1996 Edition 1.0 _ _ PRODUCT PROFILE SHEET : B811171622A-125/-100/-84/-67 F U J IT S U [2K Refresh] CMOS 2 x 512Kx 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 524,288-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu B811171622A is a CMOS Synchronous Dynamic Random Access Memory
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MB811171622A-125/-100/-84/-67
512Kx
288-WORDS
16-BIT
MB811171622A
16-bit
MB811171622A-125
MB811171622A-100
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SDC2UV6412- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SDC2UV6412-
16MByte
16-megabtye
168-pin,
B811171622A-
200mV.
168-pin
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Untitled
Abstract: No abstract text available
Text: cP July 1996 Revision 1.0 DATA S H E E T FUJI - " SD C 2U V6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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V6412-
16MByte
SDC2UV6412-
16-megabtye
168-pin,
B811171622A-
1Mx16
200mV.
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SO B2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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B2UV6412-
16MByte
SOB2UV6412-
16-megabtye
144-pin,
B811171622A-
144-pin
158x2
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Untitled
Abstract: No abstract text available
Text: cP IITSU July 1997 Revision 1.0 data sheet SDC3UV6482- 67/84/100/125 T-S 24MByte (3Mx 64) CMOS Synchronous DRAM Module General Description The SDC3UV6482-(67/84/100/125)T-S is a high performance, 24-megabtye synchronous, dynamic RAM module organized as 3M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC3UV6482-
24MByte
24-megabtye
168-pin,
B81117822A-
B811171622A-
1Mx16
67Mhz
84Mhz
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Untitled
Abstract: No abstract text available
Text: cP FUJI July 1996 Revision 1.0 D A T A S H E E T - “ S D C 1 U V 6 4 12 - 6 7 /8 4 /1 00/125 T -S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SDC1UV6412-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M
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SDC1UV6412-
168-pin,
B811171622A-
1Mx16
V6412-
168-pin
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SOB1UV6412- 67/84/100/125 T-S 8MByte ( 1 M x 64) CMOS Synchronous DRAM Module General Description The SOB1 UV6412-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M
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SOB1UV6412-
UV6412-
144-pin,
B811171622A-
V6412-
144-pin
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SDC1UV6412 A -(67/84/100/125)T-S 8MByte ( 1 M x 64) CMOS Synchronous DRAM Module General Description The SDC1UV6412(A)-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as
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SDC1UV6412
168-pin,
B811171622A-
V6412
168-pin
SDC1UV6412)
SDC1UV6412A)
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DRAM 4464
Abstract: 4464 dram 2mx64 sdram 4464 memory
Text: SDRAM Modules 1 Synchronous DRAM Modules Vcc= +3.3V±0.3V, Ta=0°C to +70°C 1Mx64 Part Number M B8501S064AC-100 MB8501S064AC-84 MB85Q1S064AC-67 M B8502S064AC-100 MB8502S064AC-84 MB8502S064AC-67 2Mx64 M B8502S064AF-100 MB8502S064AF-84 MB8502S064AF-67 MB8504S064AC-100
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1Mx64
B8501S064AC-100
MB8501S064AC-84
MB85Q1S064AC-67
B8502S064AC-100
MB8502S064AC-84
MB8502S064AC-67
B811171622A
2Mx72
4Mx72
DRAM 4464
4464 dram
2mx64 sdram
4464 memory
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D023
Abstract: bst h 05 90 3d T3R marking
Text: FUJITSUDA T A UCTO D S05-11024-2 Ï MEMORY CMOS 2 x 512 Kx 16 BITS SYNCHRONOUS DYNAMIC RAM M B 8 1 1 1 7 1 6 2 2 A - 1 2 5 / - 1 / - 8 4 / - 6 7 CMOS 2-BANK 524,288-WORD x 16 BITS Synchronous Dynamic Random Access Memor DESCRIPTION The Fujitsu B811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containin
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MB811171622A-125/-100/-84/-67
288-WORD
MB811171622A
16-bit
374175b
B811171622A-125/-100/-84/-67
50-LEAD
FPT-50P-M05)
D023
bst h 05 90 3d
T3R marking
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15j100
Abstract: No abstract text available
Text: SDRAM 1 I Synchronous DRAM: SDRAM (CMOS) VCC= Organization (W * b) Part Number Clock Frequency max. (MHz) M B 81117421A-100 100[10] Access Time 1 Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) + 3.3 V ± 0.3V , Ta= 0°C to +70 °C Power Consumption
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B81116822C-84L
MB81116822C-67L
MB811171621
MB811171622A-100
512kx16
B811171622A-84
MB811171622A-67
MB811161622C-100L
MB811161622C-84L
MB811161622C-67L
15j100
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811171622
Abstract: 811171622a 19-MB
Text: - PRELIMINARY - July 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 1 7 1 6 2 2 A - 125/ - 100/-84/-67 [2K R e fre s h ] CMOS 2 x 512 K x 16 SYNCHRONOUS DRAM CM O S 2 BA NK S OF 52 4, 28 8- WO RD S x 16-BIT S Y N C H R O N O U S DY NA MI C RA ND OM AC CE SS M E M O R Y
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16-BIT
B811171622A
11171622A
811171622
811171622a
19-MB
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29F400TA
Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Text: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)
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MBM29F002T/B
29F002T/B-X
MBM29LV002T/B
29LV002T/B-X
29LV004B
29LV004T
29LV008B
29LV008T
29F016
29F016A
29F400TA
FLC31SVC6S
MB90P263
15E03L
81V4405C
29lv800ta
MB3799
B566
MB47082
29LV800BA
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