NDS9942
Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
Text: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3
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bSD1130
NDS9942
NDS9943*
NDS9952
NDS9958*
National Semiconductor Discrete catalog
SOIC-8
NDS9943
NDS9958
P channel
SOIC8
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NPDS402
Abstract: NPDS403 NPDS404 NPDS406
Text: NPDS402 / NPDS403 1 NPDS404 / NPDS406 Discrete POWER & S ignal Technologies National Semiconductor" NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* TA = 25"C unless otherwise noted
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NPDS402
NPDS403
NPDS404
NPDS406
Vos-10V
bS01130
NPDS406
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NDS8936
Abstract: No abstract text available
Text: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8936
NDS8936
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NDP505A
Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
Text: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high
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NDP505A/NDP505B,
NDP506A/NDP506B
B1-043-299-2408
hSG113D
D3lifci33
NDP505A
B23 j ZENER DIODE
NDP506A
zener Diode B23
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MMBT3906
Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
Text: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch
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MMBT3906
MMPQ3906
PZT3906
2N3906
MMBT3906
OT-23
MMPQ3906
SOIC-16
OT-223
model of 2n3906
2N3906
MMBT3906 spice
2n3906 2a
E5 sot223
MMBT3906 SOT-23
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DG 402 rp
Abstract: No abstract text available
Text: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*
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NPDS402
NPDS403
NPDS404
NPDS406
bS0113D
Q040cJ5b
DG 402 rp
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NPD5566
Abstract: NPD5564 npd5565 2n3819 replacement jfet selection guide J2N6485 NDF9406 2N5245 replacement 2N5248 nf5102
Text: NATL SEUICOND 6 5 0 1130 <D •o 3 a c o ■ IB o a> </ {DISCRETE} NATL " S E M I CO N D, 2û DE t S D 1 1 3 D 28C (D ISCR ETE) ào r+- QD35470 35470 D r-j/ ~ (T> r \ i ru oj n cm w r* r*» Is » t CJ Ci 2 j w 2J W 0 > 0 ) 0 ) 0 j 0 ) 0 ) 0 > 0 > 0 ) 0 ) 0 ) 0 ) 0 ) 0 > 0 > 0 ) 0 >
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tSD113D
QC3S470
2222PPPPPPÃ
NPD5566
NPD5564
npd5565
2n3819 replacement
jfet selection guide
J2N6485
NDF9406
2N5245 replacement
2N5248
nf5102
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NDT410EL
Abstract: No abstract text available
Text: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDT410EL
OT-223
004006b
NDT410EL
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NPN sot23 mark NF
Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
Text: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.
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BC846A
BC846B
OT-23
BC847A
BC847B
BC847C
BC846
BC847
NPN sot23 mark NF
BC846B
BC847C
S0113D
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FDH333
Abstract: 333 marking Diode
Text: Semiconductor" FDH/FDLL 300/A / 333 r CO LOR BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPAN HAS NO RELATIONSHIP TO THE \ OF THE CATHODE TERMINAL v 1ST BAND 2ND BAND FOLL3QO FDLL300A BROWN BROWN G REEN YELLOW FDLL333 BROWN BLUE v GAP High Conductance Low Leakage Diode
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FDH300/A
FDLL300/A
FDH333
FDLL333
300/A
FDLL300A
LL-34
DO-35
MMBD1501/A-1505/A
333 marking Diode
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2N5133
Abstract: 2N3565
Text: This NPN Transistors NATL 2N929 Case Style TO-18 VCBO v CEO V ebo V (V) (V) Min Min Min 45 45 5 'CB0 VCB (nA)@ “ Max 11 10 hFE Min Max 45 350 By 60 40 2N929A TO-18 60 45 6 2 Its 60 40 25 45 45 5 10 45 600 150 100 TO-18 60 60 6 10 45 60 60 6 10 45 2N3246
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PN2907A
Abstract: sot-23 M
Text: / MMPQ2907/ NMT2907 I PZT2907A Discrete POWER & Signal Technologies National Semi conduct or ' " MMBT2907A PN2907A PZT2907A SOT-23 SOT-223 M ark: 2F NMT2907 PN2907A I MMBT2907A MMPQ2907 SOIC-16 C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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MMPQ2907/
NMT2907
PZT2907A
PN2907A
MMBT2907A
OT-23
OT-223
PN2907A
sot-23 M
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dual P-CHANNEL 30V DS MOSFET
Abstract: NDS8958 Dual N & P-Channel MOSFET
Text: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS8958
035fi
b5D113D
dual P-CHANNEL 30V DS MOSFET
NDS8958
Dual N & P-Channel MOSFET
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T3D diode
Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT451N
b501130
T3D diode
T3D 55 diode
T3D 45 diode
Diode T3D 55
T3D 01 DIODE
T3D 43 diode
T3D 65 diode
DIODE T3D 95
diode T3D
Diode T3D 30
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797L
Abstract: NDS9952A 0040027
Text: May 1996 N ational f i Semiconductor" NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS
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NDS9952A
bSD1130
b501130
00400Eci
797L
NDS9952A
0040027
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Untitled
Abstract: No abstract text available
Text: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS8926
Abstract: WNL 760
Text: e» National July 1 9 9 6 Semiconductor" NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.
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NDS8926
bSD113D
WNL 760
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j201 national
Abstract: J201 national j201 J202 MMBFJ201 MMBFJ202 T092 SOT23 N-Channel mark 6
Text: J201 / J202 / MMBFJ201 / MMBFJ202 & Discrete POW ER & Sig n a l Technologies National S e m i c o n d u c t o r ’ MMBFJ201 MMBFJ202 J201 J202 SOT-23 M ark: 62P / G2Q N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general
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MMBFJ201
MMBFJ202
OT-23
OT-23)
O-236
j201 national
J201
national j201
J202
MMBFJ202
T092
SOT23 N-Channel mark 6
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LL34
Abstract: LL-34 FDLL457 FDLL300 FDLL333 FDLL456 FDLL456A FDLL457A FDLL458 FDLL458A
Text: National Semiconductor SEMICOND Surface Mount Diodes NATL Surface Mount Devices Low Leakage Diodes by Descending Bv LEADLESS GLASS PACKAGE FDLL300 Package No. By (V) Min ln <nA) Max LL-34 150 1.0 @ Vr H Vf « Max * If mA c PF Max DISCRETE Device No. Proc.
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FDLL300
LL-34
IN300
FDLL333
SeeIN333
FDLL456
FDLL456A
LL34
FDLL457
FDLL457A
FDLL458
FDLL458A
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NDS9400A
Abstract: No abstract text available
Text: Nat i ona I May 1996 Semiconductor" NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9400A
bS0113D
NDS9400A
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ic nn 5198 k
Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base
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MPSH11
MMBTH11
b5D1130
ic nn 5198 k
nn 5198 k
Transistor C 5196
fcm 10.7 mhz
transistor s34
ic nn 5198 r
Transistor C 5198
MMBTH11
MPSH11
Q100
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TRANSISTOR 2SC 950
Abstract: NDT454P c25f
Text: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT454P
Hig13.
OT-223
Vos--10V
bS0113D
D0401SE
TRANSISTOR 2SC 950
NDT454P
c25f
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NDS9410A
Abstract: No abstract text available
Text: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9410A
bS0113Q
NDS9410A
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NDS9953A
Abstract: No abstract text available
Text: Na t i o n a l Semiconductor" M ay 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9953A
bSG113D
NDS9953A
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