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Catalog Datasheet	MFG & Type	Document Tags	PDF
PN222A Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A Text: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250	OCR Scan	bS0113Q 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 2N1613 PN222A 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A	PDF
S8302 Abstract: S8303 NPDS8301 NPDS8302 NPDS8303 Text: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage	OCR Scan	NPDS8301 NPDS8302 NPDS8303 bSQ1130 S8302 S8303 NPDS8303	PDF
BD371C-10 Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6 Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o	OCR Scan	b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6	PDF
BC338 hie hre hfe Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055 Text: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92	OCR Scan	b501130 bS01130 T-03-01 BC338 hie hre hfe BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055	PDF
T0-202 Abstract: 2n6549 Text: bflE D Devices Volts Mtn 100 NPN 2N7051 PNP h « @ lc lc Max (Amps) Min 1 20,000 2N7053 1 2N6725 1 mA mA ma 100 1.4 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 15,000 500 1.5 1A 2mA 100 Max 20,000 20,000 P o (A n k) Package TO-92(94) (Watts)	OCR Scan	bS0113Q 2N7051 2N7053 O-226 O-237 2N6725 D40C7 D40K2 T0-202 2n6549	PDF
NDS9410A Abstract: No abstract text available Text: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDS9410A bS0113Q NDS9410A	PDF
bc2378 Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633 Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi	OCR Scan	tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633	PDF
2N3567 Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5 Text: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA	OCR Scan	b501L3a 0370MM T-27-CI T-27-01 2N3567 NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5	PDF