GMR Head Preamplifier
Abstract: MAGNETIC HEAD reader writer VM5141
Text: VM5141 VTC Inc. 990823 PRELIMINARY FEATURES August 23, 1999 BLOCK DIAGRAM V ,M5 4 6 or 141 8-C ha nne l, AM R or GM R He ad s, C urre nt B ia s/C urre nt Sen se, C o nfigu ra ble Writ e C urrent Over/UNnd ew ershoo t, P in La yer R eve rsal, +5 V/+ 8V Sup plies, R e gister Prog ra mm ab le, T A De tect io n a nd Co mp en sation , Ba nd widt h 2 80+ M H z
|
Original
|
PDF
|
VM5141
GMR Head Preamplifier
MAGNETIC HEAD reader writer
VM5141
|
ZO 103 MN
Abstract: zo 107 MA VM VTC 777
Text: VM5131 VTC Inc. 990823 PRELIMINARY FEATURES August 23, 1999 BLOCK DIAGRAM V ,M5 4 6 or 141 8-C ha nne l, AM R or GM R He ad s, C urre nt B ia s/C urre nt Sen se, C o nfigu ra ble Writ e C urrent Over/UNnd ew ershoo t, P in La yer R eve rsal, +5 V/+ 8V Sup plies, R e gister Prog ra mm ab le, T A De tect io n a nd Co mp en sation , Ba nd widt h 2 80+ M H z
|
Original
|
PDF
|
VM5131
ZO 103 MN
zo 107 MA
VM VTC 777
|
Untitled
Abstract: No abstract text available
Text: Zowie Technology Corporation Silicon Epit axial Planar Diode BA V19WSG / BAV20WSG / BAV21WSG Lead free product FEATURES z z Fast Switching Speed. 1 2 Surface Mount Package Ideally Suited For For General Purpose Switching Applications z High Conductance ANODE
|
Original
|
PDF
|
V19WSG
BAV20WSG
BAV21WSG
OD-323
BAV19WSG
BAV21WSG
BAV19WSG/BAV20WSG/BAV21WSG
100mA
200mA
|
diode sod-123 marking code 120
Abstract: diode sod-123 marking code t2 BA 141 diode
Text: BAV19W-BAV21W SOD-123 Plastic-Encapsulate Diodes SOD-123 FAST SWITCHING DIODE FEATURES MARKING: BAV19W: A8 BAV20W: T2 BA 2 W T3 BAV21W: Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
|
Original
|
PDF
|
BAV19W-BAV21W
OD-123
OD-123
BAV19W:
BAV20W:
BAV21W:
diode sod-123 marking code 120
diode sod-123 marking code t2
BA 141 diode
|
BAV21WSGH
Abstract: BAV19WS Zowie Technology BA 141 diode
Text: Zowie Technology Corporation Silicon Epit axial Planar Diode BA V19WSGH / BAV20WSGH / BAV21WSGH Lead free product Halogen-free type FEATURES z z Fast Switching Speed. 1 z High Conductance 2 SOD-323 Automatic Insertion For General Purpose Switching Applications
|
Original
|
PDF
|
V19WSGH
BAV20WSGH
BAV21WSGH
OD-323
BAV19WSGH
BAV19WSGH
BAV20WSGH
BAV21WSGH
BAV19WS
Zowie Technology
BA 141 diode
|
IEC 947 EN 60947
Abstract: MCC panel design buzzer panel DC-13 Q300 RJ12 1302401 VDE 0660 - 107 Sonic Drive
Text: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling
|
Original
|
PDF
|
50V/10A
IEC 947 EN 60947
MCC panel design
buzzer panel
DC-13
Q300
RJ12
1302401
VDE 0660 - 107
Sonic Drive
|
Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
|
Original
|
PDF
|
Am29DL640D
16-Bit)
|
FSMA Connectors
Abstract: FSMA Connectors 905
Text: IBS CT 24 BK RB-LK/LK Data Sheet INTERBUS Bus Terminal Module with Remote Bus Branch and Connectors for Fiber-Optics Technology Data Sheet Revision A 11/1997 Product Description The bus terminal module can be used to connect a remote bus branch to the INTERBUS remote
|
Original
|
PDF
|
5533A001
FSMA Connectors
FSMA Connectors 905
|
S29JL064H
Abstract: S29JL064H55TFI00 S29JL064H90BAI
Text: S29JL064H 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Distinctive Characteristics Architectural Advantages Software Features Simultaneous Read/Write operations — Data can be continuously read from one bank while
|
Original
|
PDF
|
S29JL064H
16-Bit)
S29JL064HA2
S29JL064H
S29JL064H55TFI00
S29JL064H90BAI
|
A232
Abstract: S29JL064H
Text: Am29DL640H Data Sheet For new designs, S29JL064H supercedes Am29DL640H and is the factory-recommended migration path for this device. Please refer to the S29JL064H Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
|
Original
|
PDF
|
Am29DL640H
S29JL064H
63-ball
A232
|
Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
|
Original
|
PDF
|
Am29DL640D
16-Bit)
256od)
|
amd part marking
Abstract: S29JL064H S29PL064J
Text: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the
|
Original
|
PDF
|
Am29DL640D
S29JL064H
S29PL064J
amd part marking
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
|
Original
|
PDF
|
Am29DL640D
16-Bit)
|
diode ba110
Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Text: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V
|
OCR Scan
|
PDF
|
BA110
BB141
BB142.
diode ba110
BA142
BA 141 diode
BB142
ba112
BA 30 C
Diode BAY 45
S3 marking DIODE
|
|
|
Untitled
Abstract: No abstract text available
Text: Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Type Characteristics (2 a = 25 °C) Maximum Ratings Fr /f V mA CT pF at Fr V VF V Package at r, /F ä mA . a at h mA /r nA at Lead Code r* V • BA 582 35
|
OCR Scan
|
PDF
|
OD-123
OD-323
OT-23
|
Untitled
Abstract: No abstract text available
Text: BAS19W- BAS21W SURFACE MOUNT FAST SWITCHING DIODE Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-323 -H ; h“ A m I— Mechanical Data_
|
OCR Scan
|
PDF
|
BAS19W-
BAS21W
OT-323
OT-323,
MIL-STD-202,
BAS19W
100mA
DS30118
|
smd sot23 marking l6
Abstract: MAF100 HB sot23 DO-35-DHD sot-23 Marking l7 ZF SOT23
Text: SIEMENS AKTIENGESELLSCHAF Q3E T> • Ô235b05 GQlSb70 2 « S I E Û PIN Diodes fo r G eneral Purposes Glass Packages Characteristics at Tk = 2 5 °C Max. ratings Type Vr Ptot V W °C BAR 12-1 BAR 12-3 100 100 0.25 0.25 BAR 79 60 - Package Marking BAR 12 C n ty p
|
OCR Scan
|
PDF
|
235b05
GQlSb70
DO-35
DO-35-DHD
OT-23
OT-143
DO-35-DHD
smd sot23 marking l6
MAF100
HB sot23
sot-23 Marking l7
ZF SOT23
|
Untitled
Abstract: No abstract text available
Text: Order this data sheet by BAW156LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAW156LT1 M onolithic Dual Sw itching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times
|
OCR Scan
|
PDF
|
BAW156LT1/D
156LT1
156LT3
inch/10
BAW156LT1
OT-23
O-236AB)
2PHX33712F-0
|
SKP24A
Abstract: sis 968 P110a 5KP78A 5KP10A 5KP110A 5KP11A 5KP12A 5KP14A 5KP15A
Text: NEW ENGLAND SEMICONDUCTOR 5KP5.0A thru 5KP110A 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR O AVAILABLE IN VOLTAGES FROM 6.7V THRU 128V 0.3 1 0 + /-0 .0 1 0 The NES 5KP5.0 to 5K.P110A series o f transient suppressor diodes are designed to protect electronic equipment from failure due to over voltage transients. The devices
|
OCR Scan
|
PDF
|
5KP110A
P110A
oP33A
5KP36A
5KP40A
5KP43A
5KP45A
5KP48A
5KP51A
5KP54A
SKP24A
sis 968
5KP78A
5KP10A
5KP110A
5KP11A
5KP12A
5KP14A
5KP15A
|
Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR 5KP5.0A thru 5KP110A 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR O AVAILABLE IN VOLTAGES FROM 6.7V THRU 128V 0.310+/-0.010 The NES 5KP5.0 to 5K.P110A series o f transient suppressor diodes are designed to protect electronic equipment from failure due to over voltage transients. The devices
|
OCR Scan
|
PDF
|
5KP110A
P110A
|
irkv 300
Abstract: k142 IRKH135-16 SCR 40 RIA 120 25 RIA 120 SCR irkt 40 T 705 scr IRKT AN TBT 136 IRKH141-20
Text: 5*îE I INR 4Û554SE □OlBB'îO 705 assae irk’35' i R I SCR / SCR and SCR / DIODE NEW INT-A-pak Power Modules INTERNATIONAL RE CT IF IE R Features • H igh v o lta g e ■ E le c tric a lly is o la te d ba se p late ■ 3000 V RMS is o la tin g v o lta g e
|
OCR Scan
|
PDF
|
554S2
10ohms-tr<
irkv 300
k142
IRKH135-16
SCR 40 RIA 120
25 RIA 120 SCR
irkt 40
T 705 scr
IRKT AN
TBT 136
IRKH141-20
|
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
|
OCR Scan
|
PDF
|
AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
|
ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
|
OCR Scan
|
PDF
|
F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
|
TE 2161
Abstract: No abstract text available
Text: S P E C 1 F 1 C A T 1 ON SILICON DIODE DEVICE NAME TYPE NAME : SPEC. No. : DATE . E R W 1 0-1 20 F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Cadici DRAWN. _ c a 3C CHECKED
|
OCR Scan
|
PDF
|
0257-R-004a
td-z20ac
20kHz
Duty50X
h04-004-03
TE 2161
|
