BA112 Search Results
BA112 Price and Stock
Signal Transformer Inc FCBA1-1210F-2R2JFIXED IND 2200NH 310MA 2.41 MOHM |
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FCBA1-1210F-2R2J | Reel | 2,000 | 2,000 |
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FCBA1-1210F-2R2J |
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Signal Transformer Inc FCBA1-1210F-1R0JFIXED IND 1000NH 320MA 1.85 MOHM |
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FCBA1-1210F-1R0J | Cut Tape | 2,000 | 1 |
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FCBA1-1210F-1R0J |
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Traco Power TBA-1-1212EDC DC CONVERTER 12V 1W |
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TBA-1-1212E | Tube | 259 | 1 |
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Traco Power TBA-1-1211DC DC CONVERTER 5V 1W |
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TBA-1-1211 | Tube | 39 | 1 |
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Traco Power TBA-1-1213HIDC DC CONVERTER 15V 990MW |
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TBA-1-1213HI | Tube | 28 | 1 |
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BA112 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BA112 |
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Semiconductor Summary 1969 | Scan | |||
BA112 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | |||
BA112 | Unknown | Semiconductor Devices, Diode, and SCR Datasheet Catalog | Scan |
BA112 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
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KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor | |
Untitled
Abstract: No abstract text available
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K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX | |
P-TFBGA63-0911-0
Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
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TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112 | |
BA102
Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
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TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 | |
BA102
Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
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TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 | |
K8P2815UQB
Abstract: No abstract text available
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K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB | |
BA258
Abstract: ba146 BA148 ba198 BA204
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K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204 | |
samsung electronics ba41
Abstract: BA175
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K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175 | |
BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
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K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 | |
Untitled
Abstract: No abstract text available
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K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh | |
samsung ba92
Abstract: BA137 k8p3215
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K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215 | |
diode ba102
Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
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TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 | |
TC58FVM7B5BTG65
Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
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TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65 | |
BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
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K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106 | |
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K8P6415UQB
Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
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K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64 | |
TC58FVM7B5BTG65
Abstract: TC58FVM7t5BTG65 BK-10 HA145
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TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145 | |
BA254
Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
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TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT | |
BA100 diode
Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
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KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode | |
BA142
Abstract: No abstract text available
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K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142 | |
K8P6415
Abstract: K8P32 K8P3215u K8P6415UQB K8P64
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K8P6415UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P6415 K8P32 K8P3215u K8P6415UQB K8P64 | |
Untitled
Abstract: No abstract text available
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K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H | |
BA188
Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
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K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213 | |
BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
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K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379 | |
BA251
Abstract: 16N10
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K8F56 256Mb 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh BA251 16N10 |