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Murata Manufacturing Co Ltd BLM18BA100SN1D FERRITE BEAD 10 OHM 0603 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLM18BA100SN1D	Reel	108,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.01875	Buy Now
Avnet Americas	BLM18BA100SN1D	Reel		10 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	BLM18BA100SN1D	Cut Tape	2,315		10	1 - 10 $0.053 100 $0.036 1000 $0.036 10000 $0.036	Buy Now
Bristol Electronics	BLM18BA100SN1D		8,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	BLM18BA100SN1D		7,507			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	BLM18BA100SN1D		3,900		45	1 - 10 - 100 $0.1125 1000 $0.0338 10000 $0.0338	Buy Now
TME	BLM18BA100SN1D		2,895		1	1 $0.0978 10 $0.0498 100 $0.0355 1000 $0.0258 10000 $0.0194	Buy Now

Avnet Abacus	BLM18BA100SN1D		12,000	12 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	BLM18BA100SN1D	Cut Tape	4,056			1 - 10 - 100 $0.032 1000 $0.016 10000 $0.0151	Buy Now
Murata Manufacturing Co Ltd BLM15BA100SN1D FERRITE BEAD 10 OHM 0402 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLM15BA100SN1D	Reel	20,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01373	Buy Now
Avnet Americas	BLM15BA100SN1D	Reel		8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.01159	Buy Now
Bristol Electronics	BLM15BA100SN1D		3,040			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	BLM15BA100SN1D				10,000	1 - 10 - 100 - 1000 - 10000 $0.00512	Get Quote
Avnet Abacus	BLM15BA100SN1D			11 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Cree, Inc. MLEAMB-A1-0000-000X01 LED XLAMP MLE AMB 590NM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MLEAMB-A1-0000-000X01	Reel	4,200		1,400	1 - 10 - 100 - 1000 - 10000 $0.60001	Buy Now
Avnet Americas	MLEAMB-A1-0000-000X01	Bag		4 Weeks	1,400	1 - 10 - 100 - 1000 - 10000 $0.4636	Buy Now
Newark	MLEAMB-A1-0000-000X01	Cut Tape			1,400	1 - 10 - 100 - 1000 $0.734 10000 $0.734	Buy Now
	MLEAMB-A1-0000-000X01	Reel			1,400	1 $0.774 10 $0.774 100 $0.774 1000 $0.774 10000 $0.675	Buy Now
Bristol Electronics	MLEAMB-A1-0000-000X01		775			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	MLEAMB-A1-0000-000X01			8 Weeks	1,400	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol RF PSMP-FSBA-1000 CONN ADAPT PLUG-PLUG PSMP 50 OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PSMP-FSBA-1000	Bag	2,011		1	1 $18.59 10 $14.305 100 $12.0176 1000 $9.36637 10000 $8.86641	Buy Now
Newark	PSMP-FSBA-1000	Bulk			120	1 - 10 - 100 $13.37 1000 $13.17 10000 $13.17	Buy Now
TME	PSMP-FSBA-1000				1	1 $18.15 10 $14.52 100 $12.71 1000 $12.71 10000 $12.71	Get Quote
Interstate Connecting Components	PSMP-FSBA-1000					1 - 10 - 100 - 1000 $11.6094 10000 $11.6094	Buy Now
Master Electronics	PSMP-FSBA-1000					1 $25.344 10 $25.344 100 $11.22 1000 $11 10000 $11	Buy Now

TestEquity LLC	PSMP-FSBA-1000					1 $14.19 10 $14.19 100 $14.19 1000 $14.19 10000 $14.19	Buy Now
Skyworks Solutions Inc 510DBA100M000BAG XTAL OSC XO 100.0000MHZ HCSL SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	510DBA100M000BAG		283		1	1 $6.77 10 $5.84 100 $6.77 1000 $4.36656 10000 $4.36656	Buy Now

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BA100 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
BA100	L-Com	ADAPTOR BNC M/BNC M	Original	PDF
BA100	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BA100	Unknown	SILICON DIODE	Scan	PDF
BA100	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
BA100	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BA100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
BA100	Unknown	Cross Reference Datasheet	Scan	PDF
BA100	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF

BA100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	PDF	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	PDF	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX
40101-001 Abstract: NK4 RESISTOR RC21U 40101 BY cecc 40101-002 resistor color code nt4s vishay ny5 E192 RESISTOR NY4 100K Text: NK, NP, NT, NY Vishay Sfernice Precision Metal Film Resistors FEATURES • • • • • 0.063 W to 0.5 W at 70 °C Approved according to CECC 40101 Wide ohmic range from 1 Ω to 4.7 MΩ Good initial precision up to ± 0.1 % Operating temperatures: - 55 °C to + 155 °C for TCR ≥ 25 ppm/°C	Original	PDF	2002/95/EC 18-Jul-08 40101-001 NK4 RESISTOR RC21U 40101 BY cecc 40101-002 resistor color code nt4s vishay ny5 E192 RESISTOR NY4 100K
P-TFBGA63-0911-0 Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112 Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	PDF	TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112
0704M Abstract: E192 Series 1107M Text: MSP Vishay Sfernice Precision Surface Mount Resistors Wirewound or Metal Film Technologies FEATURES • Approved according CECC 40402-801 wirewound • Wide range of ohmic values (0.04 Ω to 1 MΩ) • Low temperature coefficient (± 25 ppm/°C available)	Original	PDF	18-Jul-08 0704M E192 Series 1107M
MSP2B Abstract: 0704M Text: MSP Vishay Sfernice Precision Surface Mount Resistors Wirewound or Metal Film Technologies FEATURES • Approved according CECC 40402-801 wirewound  Wide range of ohmic values (0.04  to 1 M)  Low temperature coefficient (± 25 ppm/°C available)	Original	PDF	2002/95/EC 11-Mar-11 MSP2B 0704M
AM1000 Abstract: RS71Y RC21U rs58y nk5 vishay Text: NK, NP, NT, NY Vishay Sfernice Precision Metal Film Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • • • • • • NFC 83-230/CECC 40 100 ESA-SCC 4001 LN2/GAM-T-1 Wide ohmic range from 1 Ω to 5.7 MΩ Good initial precision up to ± 0.1 % Operating temperatures:	Original	PDF	83-230/CECC 18-Jul-08 AM1000 RS71Y RC21U rs58y nk5 vishay
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	PDF	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
ba100 Abstract: No abstract text available Text: RMB, RMBS Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • • • • • • • • • • 0.75 W to 3 W at 25 °C NF C 83-210 CECC 40201-005 Low temperature coefficient ≤ ± 50 ppm/°C Low ohmic values 15 mΩ available Excellent behavior against humidity	Original	PDF	18-Jul-08 ba100
BA102 Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for	Original	PDF	TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
K8P2815UQB Abstract: No abstract text available Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB
BA258 Abstract: ba146 BA148 ba198 BA204 Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	PDF	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

samsung ba92 Abstract: BA137 k8p3215 Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215
diode ba102 Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	PDF	TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
TC58FVM7B5BTG65 Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65 Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as	Original	PDF	TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
BA100 diode Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106 Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance	Original	PDF	K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
06SEC Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
K8P6415UQB Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64 Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
BB121 Abstract: No abstract text available Text: C31E6.pdf 01.5.29 This is the PDF file of catalog No.C31E-6 BLM18 Series 1608 Size 0.4±0.2 0.8±0.15 1 1.6±0.2 0.8±0.15 in mm Impedance (at 100MHz) (ohm) Rated Current (mA) DC Resistance(max.) (ohm) Operating Temperature Range (°C) BLM18AG121SN1 120 ±25%	Original	PDF	C31E-6 C31E6 BLM18 BLM18AG121SN1 BLM18AG151SN1 BLM18AG221SN1 BLM18AG331SN1 BLM18AG471SN1 BLM18AG601SN1 BLM18AG102SN1 BB121
BA100 diode Abstract: ba100 diode BA100 Text: BA100 SILICON DIO DE G eneral purpose silicon diode in a subm iniature all g la ss DO-7 envelope. MECHANICAL DATA I Dimensions in mm not tinned CNI DO-7 o «• t k Cl • V ► t 25.4min u U , [I 25.4min 7 6 t o * y - 7ZQ065O J mln. m ounting width 13 The coloured band indicates the cathode side	OCR Scan	PDF	BA100 BA100 diode ba100 diode BA100
SC150C-60 Abstract: SC100C-120 SC100C-60 SC100C-80 SC50C-60 SC50C-80 SC70C-100 SC70C-120 SC70C-40 SC70C-60 Text: 13 - « Vgt V 1. 95 1. 95 1. 50 1. 50 1. 50 1. 50 1. 50 i . 60 1. 60 1. 60 1. 60 1. 60 1. 60 1. 60 1.60 1. 60 1. 60 1. 40 1.40 1. 45 1. 45 1. 45 1. 45 X. ‘i j 1. 40 1. 40 Tj c o 25 25 25 25 2b 25 2b 2b 2b 2b 25 2b 2b 2b 25 25 25 25 25 25 25 25 2b 0C 2b	OCR Scan	PDF	SC50C-60 SC50C-80 SC70C-100 SC70C-120 H-101 SC150C-60 SC100C-120 SC100C-60 SC100C-80 SC50C-60 SC50C-80 SC70C-100 SC70C-120 SC70C-40 SC70C-60

BA100 Search Results

BA100 Price and Stock

Murata Manufacturing Co Ltd BLM18BA100SN1D

Murata Manufacturing Co Ltd BLM15BA100SN1D

Cree, Inc. MLEAMB-A1-0000-000X01

Amphenol RF PSMP-FSBA-1000

Skyworks Solutions Inc 510DBA100M000BAG

BA100 Datasheets (8)

BA100 Datasheets Context Search

SAMSUNG MCP

Untitled

40101-001

P-TFBGA63-0911-0

0704M

MSP2B

AM1000

BA102

ba100

BA102

K8P2815UQB

BA258

samsung electronics ba41

BA379

samsung ba92

diode ba102

TC58FVM7B5BTG65

k2645

BA100 diode

06SEC

K8P6415UQB

BB121

BA100 diode

SC150C-60