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Micron Technology Inc MTFDKBA960TFR-1BC15ABYY 7450 1TB M.2 SSD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTFDKBA960TFR-1BC15ABYY	Box	8		1	1 $236.02 10 $233.75 100 $233.75 1000 $233.75 10000 $233.75	Buy Now
Avnet Americas	MTFDKBA960TFR-1BC15ABYY	Tray		18 Weeks	1	1 $248.2425 10 $245.60976 100 $241.8695 1000 $241.8695 10000 $241.8695	Buy Now
Mouser Electronics	MTFDKBA960TFR-1BC15ABYY		1			1 $261.39 10 $257.39 100 $257.39 1000 $257.39 10000 $257.39	Buy Now
Newark	MTFDKBA960TFR-1BC15ABYY	Bulk			5	1 - 10 $259.93 100 $244.97 1000 $244.97 10000 $244.97	Buy Now
Schneider Electric XB4BA962 CONFIG SW BODY PUSHBUT NON-ILLUM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XB4BA962	Box			1	1 $74.05 10 $74.05 100 $74.05 1000 $74.05 10000 $74.05	Buy Now
Mouser Electronics	XB4BA962					1 $70.85 10 $68.87 100 $64.19 1000 $64.19 10000 $64.19	Get Quote
Newark	XB4BA962	Bulk			1	1 $79.26 10 $67.73 100 $52.1 1000 $50.98 10000 $50.98	Buy Now
RS	XB4BA962	Bulk		2 Weeks	1	1 $71.56 10 $71.56 100 $71.56 1000 $71.56 10000 $71.56	Get Quote
Skyworks Solutions Inc 510GBA96M0000BAG XTAL OSC XO 96.0000MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	510GBA96M0000BAG				200	1 - 10 - 100 - 1000 $4.18545 10000 $4.18545	Buy Now
Mouser Electronics	510GBA96M0000BAG					1 - 10 - 100 - 1000 $3.79 10000 $3.79	Get Quote
Richardson RFPD	510GBA96M0000BAG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Skyworks Solutions Inc 511EBA96M0000AAG XTAL OSC XO 96.0000MHZ LVPECL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	511EBA96M0000AAG				200	1 - 10 - 100 - 1000 $5.6358 10000 $5.6358	Buy Now
Mouser Electronics	511EBA96M0000AAG					1 - 10 - 100 - 1000 $5.02 10000 $5.02	Get Quote
Richardson RFPD	511EBA96M0000AAG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Skyworks Solutions Inc 511FBA96M0000BAG XTAL OSC XO 96.0000MHZ LVDS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	511FBA96M0000BAG				200	1 - 10 - 100 - 1000 $5.20175 10000 $5.20175	Buy Now
Mouser Electronics	511FBA96M0000BAG					1 - 10 - 100 - 1000 $4.69 10000 $4.69	Get Quote
Richardson RFPD	511FBA96M0000BAG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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BA96 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
X10 schematic Abstract: BA96-01460A MMZ1608S121AT ca2 smd SOT-23 BA41-00312A MINISMDC075-2 TP602 BG1 d1 257 150uf 25v 7343 ACM2012-900-2P-T Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date APPROVAL DC-DC BOARD BA96-01460A BA41-00312A mp 10 10 , 08 , 2002 CHECK : : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-2 DC/DC Board	Original	BA96-01460A BA41-00312A LTC3728 KSR1102 2N7002LT1 BA41-# X10 schematic MMZ1608S121AT ca2 smd SOT-23 MINISMDC075-2 TP602 BG1 d1 257 150uf 25v 7343 ACM2012-900-2P-T	PDF
smd diode U12 c526 Abstract: CAP SMD X7R 100NF 50V 10 smd diode c644 smd diode c549 smd DIODE c728 smd diode c731 SCB-1000S smd diode c548 C536 smd diode smd diode U12 C647 Text: Option SEC CODE BA96-03242A BA59-01900A BA81-03428A BA75-01863B BA96-03241A BA59-01970A BA81-03428A BA75-01863B BA96-03239A BA59-01985B BA81-03428A BA75-01863A BA96-03223A BA59-02020A BA81-03428A BA75-01863B BA96-03222A BA59-01953A BA81-03428A BA75-01863A	Original	BA96-03242A BA59-01900A BA81-03428A BA75-01863B BA96-03241A BA59-01970A BA96-03239A BA59-01985B smd diode U12 c526 CAP SMD X7R 100NF 50V 10 smd diode c644 smd diode c549 smd DIODE c728 smd diode c731 SCB-1000S smd diode c548 C536 smd diode smd diode U12 C647	PDF
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor	PDF
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX	PDF
P-TFBGA63-0911-0 Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112 Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112	PDF
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96	PDF
BA102 Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for	Original	TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65	PDF
K8P2815UQB Abstract: No abstract text available Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB	PDF
BA258 Abstract: ba146 BA148 ba198 BA204 Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204	PDF
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175	PDF
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324	PDF
Untitled Abstract: No abstract text available Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh	PDF
samsung ba92 Abstract: BA137 k8p3215 Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215	PDF
diode ba102 Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641	PDF

BA100 diode Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106 Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance	Original	K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106	PDF
BCM4401 Abstract: nvidia geforce 7300 MP0804H samsung BA41 01326A nvidia go 7300 PC-GF20 FR HTS548060M9AT00 BA59-01827A HTS541060G9AT00 broadcom bcm92045nmd Text: - This Document can not be used without Samsung's authorization - 2. Introduction and Specification 1 Product Characteristic 1) High efficiency NotePC - Intel Napa Platform (Yonah Core CPU) & Centrino Technology - nVIDIA GeForce Go 7400 (Tourbo Cache) High performance Grahpic ※Factory Option	Original	533MHz 667MHz) 11a/b/g B141EW01 LTN141W1-L04-O LTN141W1-L04-G BA43-00149A BA43-00147A BA59-01691A BCM4401 nvidia geforce 7300 MP0804H samsung BA41 01326A nvidia go 7300 PC-GF20 FR HTS548060M9AT00 BA59-01827A HTS541060G9AT00 broadcom bcm92045nmd	PDF
LED Clock Display 94hb Abstract: 94hb sanyo lcd 94hb BA68-01686A lsc-24081m alps touchpad 94HB BA41 01122A nylok BA42-00026A Text: 4 Main Board 4-1 Main Board Design 4-1-1 4-1-2 PURPOSE SX05 Intel CPU (Intel Centrino Mobile Technology) Mobile CPU Montara-GM 593 µFCBGA Intel 845G ICH4 ICH4-M Main Board (CATEGORY) Main Board Resource Chipset Spec. System Description of chip spec. and system resource	Original	STS304-1/2H SD-R2312 BA68-02203A BA68-01688A BA64-00518A BA73-00238A BA62-00196A BA73-00342A LED Clock Display 94hb 94hb sanyo lcd 94hb BA68-01686A lsc-24081m alps touchpad 94HB BA41 01122A nylok BA42-00026A	PDF
AR2425 Abstract: aa-pb4nc6b 88E8055 ICH9M BCM92045NMD ATI Radeon T60H928 P-8600 csp1040 alcor AU6371 Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - 2. 제품 특징 및 사양 1 제품 특징 1) 고성능 노트북 컴퓨터 - Intel Core 2 Duo Processor 및 DDR II Memory를 적용한 고성능 컴퓨터	Original	T9600 80GHz T9400 53GHz P9500 P8600 40GHz P8400 26GHz AR2425 aa-pb4nc6b 88E8055 ICH9M BCM92045NMD ATI Radeon T60H928 P-8600 csp1040 alcor AU6371	PDF
LTN150XG-L05 Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756 Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A	Original	BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A LTN150XG-L05 ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756	PDF
Alcor AU6366 Abstract: nvidia go 7300 graphic card go 7300 nvidia geforce 7300 NVIDIA geforce chip synaptics 7300 Sanyo battery nvidia geforce go 7400 go 7400 NVIDIA geforce Text: - This Document can not be used without Samsung’s authorization - 2. Instruction and Specification 1 Product Characteristic 1) High Efficiency NotePC - Intel Napa Platform (Yonah Core CPU) & Centrino Technology ※ Factory Option (Merom/Yonah Celeron)	Original	533MHz 667MHz) 11a/b/g BA59-01788A BA59-01835A BA59-01834A B141EW01 E141EW01 LTN141W1-L040-O LTN141W1-L04-G Alcor AU6366 nvidia go 7300 graphic card go 7300 nvidia geforce 7300 NVIDIA geforce chip synaptics 7300 Sanyo battery nvidia geforce go 7400 go 7400 NVIDIA geforce	PDF
smd diode c539 Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button Text: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF	Original	S630/S670 BA60-00030A BA68-40005L BA70-00030A BA72-00063A BA73-00001A BA92-00073A 0404agrams smd diode c539 samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button	PDF
RS600ME Abstract: intel GM45 cantiga hp 530 motherboard WDC-WD3200BEVT-22ZCT0 TS-L633A WD1600BEVS-22RST0 toshiba Phoenix BIOS specification delphi modem d40 Atheros wifi CSP1040 Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 2. 제품 특징 및 사양 2-1. 제품 특징 고성능 노트북 컴퓨터 • • • • •	Original	5W/35W 9300M 250GB/ DDR501 BATT500 J512/513 RS600ME intel GM45 cantiga hp 530 motherboard WDC-WD3200BEVT-22ZCT0 TS-L633A WD1600BEVS-22RST0 toshiba Phoenix BIOS specification delphi modem d40 Atheros wifi CSP1040	PDF
BLY91 Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _	OCR Scan	711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips	PDF
82378 Abstract: No abstract text available Text: 82378 SYSTEM I/O SIO • Provides the Bridge Between the PCI Bus and ISA Bus ■ 100% PCI and ISA Compatible — PCI and ISA Master/Slave Interface — Directly Drives 10 PCI Loads and 6 ISA Slots — Supports PCI at 25 MHz and 33 MHz — Supports ISA from 6 MHz to 8.33	OCR Scan	32-bit 82C37A 16-bit 82378	PDF

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BA96 Search Results

BA96 Price and Stock

Micron Technology Inc MTFDKBA960TFR-1BC15ABYY

Schneider Electric XB4BA962

Skyworks Solutions Inc 510GBA96M0000BAG

Skyworks Solutions Inc 511EBA96M0000AAG

Skyworks Solutions Inc 511FBA96M0000BAG

BA96 Datasheets Context Search

X10 schematic

smd diode U12 c526

SAMSUNG MCP

Untitled

P-TFBGA63-0911-0

BA102

BA102

K8P2815UQB

BA258

samsung electronics ba41

BA379

Untitled

samsung ba92

diode ba102

BA100 diode

BCM4401

LED Clock Display 94hb

AR2425

LTN150XG-L05

Alcor AU6366

smd diode c539

RS600ME

BLY91

82378