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    BA153G

    Abstract: BA157G marking DLA marking L2 Taiwan semiconductor BA159G
    Text: s TAIWAN SEMICONDUCTOR B A 157G - B A 159G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers tò R oHS COM PLIANCE Q-QA1 - 2 3 - •1C7 12.7 ! .OSO 12.0 ! DIA. I.JiZTvtl M IN . Features <v ^ <- <■ <■ G lass pass ivatcd ch i p ju nction. High efficiency, Low VF


    OCR Scan     		PDF BA157G BA159G DO-41 MIL-STD-202, 95-iiir) BA153G marking DLA marking L2 Taiwan semiconductor BA159G

    DIODE byx55 100

    Abstract: efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD
    Text: GENL INSTR/ POWER ESE D • 30T0Í37 0 0 Q 3 3 n T ■ 7^ Fast Recovery Silicon Rectifiers General Instrument’s selection of fast recovery rectifiers are designed fo r circuits requiring switching times of 150ns to 500ns. They are offered in a variety of


    OCR Scan     		PDF 150ns 500ns. GL-34 RGL34A RMPG06A# RMPG06B» RGP10A RGL34B BYM06-100 DIODE byx55 100 efr135 by207 General instrument 1n4948 1N4946 cross reference BA153G diode SRP100d JTX1N3611 diode rgp10g 1N4937 SMD