BA182 Search Results

BA182 Result Highlights (5)

Part	Manufacturer	Description
RMQCEA3636DGBA-182#AC0	Renesas Electronics Corporation	36-Mbit DDR™ II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
RMQSDA3636DGBA-182#AC0	Renesas Electronics Corporation	36-Mbit QDR™ II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
RMQCBA3618DGBA-182#AC0	Renesas Electronics Corporation	QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray
RMQSAA3618DGBA-182#AC0	Renesas Electronics Corporation	QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray
RMQSDA3618DGBA-182#AC0	Renesas Electronics Corporation	36-Mbit QDR™ II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

BA182 Price and Stock

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Ecliptek Corporation E1SBA18-25.000M-TR CRYSTALS 25.000MHZ 50PPM 18PF PA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	E1SBA18-25.000M-TR	Reel			1,000	1 - 10 - 100 - 1000 $0.19491 10000 $0.19491	Buy Now
SiTime Corporation SIT8924BA-18-28E-27.000000 MEMS OSC XO 27.0000MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT8924BA-18-28E-27.000000				1	1 $4.55 10 $4.325 100 $3.7563 1000 $3.07332 10000 $2.84566	Buy Now
Abracon Corporation E1SBA18-24.000M TR Quartz Crystal Resonator 24MHz 18pF 2-Pin HC49/UP T/R - Tape and Reel (Alt: E1SBA18-24.000M TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	E1SBA18-24.000M TR	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	E1SBA18-24.000M TR					1 $0.32 10 $0.265 100 $0.228 1000 $0.227 10000 $0.222	Get Quote
Abracon Corporation E1SBA18-20.000M TR Quartz Crystal Resonator 20MHz 18pF 2-Pin HC49/UP T/R - Tape and Reel (Alt: E1SBA18-20.000M TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	E1SBA18-20.000M TR	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	E1SBA18-20.000M TR					1 $0.32 10 $0.265 100 $0.228 1000 $0.227 10000 $0.222	Get Quote
Abracon Corporation E1SBA18-25.000M TR Quartz Crystal Resonator 25MHz 18pF 2-Pin HC49/UP T/R - Tape and Reel (Alt: E1SBA18-25.000M TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	E1SBA18-25.000M TR	Reel		20 Weeks	1,000	1 - 10 - 100 - 1000 $0.14784 10000 $0.1136	Buy Now
Mouser Electronics	E1SBA18-25.000M TR					1 $0.32 10 $0.265 100 $0.228 1000 $0.194 10000 $0.191	Get Quote

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BA182 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
BA182	Mullard	Quick Reference Guide 1977/78	Scan	PDF
BA182	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BA182	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
BA182	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BA182	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BA182	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
BA182	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF
BA182	Philips Components	Philips Data Book Scan	Scan	PDF
BA182	Siemens	Semiconductor Manual, Discrete Industrial Types 1974	Scan	PDF
BA182	Telefunken Electronic	Diodes 1977	Scan	PDF
BA182	Thomson-CSF	Condensed Data Book 1977	Scan	PDF
BA182	Unitra Cemi	Diode	Scan	PDF
BA182	Unitra Cemi	Diode	Scan	PDF
BA182	Unitra Cemi	Diode	Scan	PDF

BA182A	Iskra	Silicon Switching / Planar Signal Diodes	Scan	PDF

BA182 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BB509 Abstract: Varicap bb112 elektor receiver sfr455j ELEKTOR PE1GIC general coverage receiver varicap bb509 ssb receiver elektor NE602 application note TCA440 12V Fixed-Voltage Regulator 7812 Text: RADIO, TELEVISION & VIDEO general-coverage receiver part 1: circuit descriptions This twopart article describes an AM/FM/SSB receiver for the frequency range 0.15 – 32 MHz, which is generally but incorrectly referred to as ‘the shortwave bands’. The receiver is microprocessor controlled	Original	12-key BB509 Varicap bb112 elektor receiver sfr455j ELEKTOR PE1GIC general coverage receiver varicap bb509 ssb receiver elektor NE602 application note TCA440 12V Fixed-Voltage Regulator 7812	PDF
K8P2815UQB Abstract: No abstract text available Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB	PDF
BA258 Abstract: ba146 BA148 ba198 BA204 Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204	PDF
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175	PDF
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324	PDF
Untitled Abstract: No abstract text available Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh	PDF
TC58FVM7B5BTG65 Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65 Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as	Original	TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65	PDF
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417	PDF
06SEC Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash	PDF
TC58FVM7B5BTG65 Abstract: TC58FVM7t5BTG65 BK-10 HA145 Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as	Original	TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145	PDF
BA254 Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features	Original	TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT	PDF
BA142 Abstract: No abstract text available Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142	PDF
Untitled Abstract: No abstract text available Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR	Original	K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H	PDF
BA188 Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213 Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213	PDF

BA251 Abstract: 16N10 Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8F56 256Mb 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh BA251 16N10	PDF
BA339 Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204 Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204	PDF
BA339 Abstract: K8C1215ET BA507 Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507	PDF
BA95 Abstract: 8A0000 Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR	Original	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H BA95 8A0000	PDF
BA339 Abstract: No abstract text available Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339	PDF
ba508 Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473 Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary	Original	K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473	PDF
Untitled Abstract: No abstract text available Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---	PDF
samsung ba92 Abstract: No abstract text available Text: Preliminary FLASH MEMORY K8F56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8F56 256Mb co1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh samsung ba92	PDF
SOD-23 Abstract: BA182 SOD23 dioda CE37 45tamb Text: 2 - 74/2 DIODA PRZEL4CZNIKOWA * BA182 SWW 1156-121 Dioda krzem ow a ep ip lan arn a charakteryzuje siç maJq opornosci^ w k ieru n k u przew odzenia. Jest ona przeznaczona do pracy glów nie jako dioda przel^cznikow a w glowicy UHF w odbiornikaeh telew izyjnych.	OCR Scan	BA182 SOD-23 BA182 SOD23 dioda CE37 45tamb	PDF
Katalog CEMI Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby	OCR Scan		PDF

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BA182 Search Results

BA182 Result Highlights (5)

BA182 Price and Stock

Ecliptek Corporation E1SBA18-25.000M-TR

SiTime Corporation SIT8924BA-18-28E-27.000000

Abracon Corporation E1SBA18-24.000M TR

Abracon Corporation E1SBA18-20.000M TR

Abracon Corporation E1SBA18-25.000M TR

BA182 Datasheets (15)

BA182 Datasheets Context Search

BB509

K8P2815UQB

BA258

samsung electronics ba41

BA379

Untitled

TC58FVM7B5BTG65

k2645

06SEC

TC58FVM7B5BTG65

BA254

BA142

Untitled

BA188

BA251

BA339

BA339

BA95

BA339

ba508

Untitled

samsung ba92

SOD-23

Katalog CEMI