BA258
Abstract: ba146 BA148 ba198 BA204
Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8S2815ET
128Mb
00003FH
00007FH
0000BFH
000000H
44-Ball
BA258
ba146
BA148
ba198
BA204
|
PDF
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BA260
Abstract: BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148
Text: K8A2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8A2815ET
128Mb
54MHz
A0-A22
00000FH
00001FH
00002FH
000000H
BA260
BA139
BA138
BA138 diode
BA205
BA169
BA251
ba209
BA114
ba148
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PDF
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samsung electronics ba41
Abstract: BA175
Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
samsung electronics ba41
BA175
|
PDF
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BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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PDF
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ba508
Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
ba508
BA516 diode
BA512
BA507
ba358
BA339
BA505
BA459
BA516
BA329
|
PDF
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Untitled
Abstract: No abstract text available
Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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K8C54
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
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PDF
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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Original
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K8S5615ET
22F8h
22FEh
54MHz
66MHz
270sec
240sec
256Byte
00003FH
00007FH
BA512
ba469
BA516
BA508
BA323
BA340
BA476
BA507
BA312
BA379
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PDF
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BA339
Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA339
BA516
BA501
BA379
BA481
ba473
BA450
BA508
ba204
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PDF
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BA95
Abstract: 8A0000
Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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Original
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
BA95
8A0000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
|
PDF
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Untitled
Abstract: No abstract text available
Text: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
|
PDF
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BA425
Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA425
BA512
BA507
BA379
BA324
BA377
BA497
BA339
BA413
ba418
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8C56
256Mb
couldr13
A0-A23
000000FH
000001FH
000002FH
0000000H
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PDF
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06SEC
Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8F56
256Mb
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
06SEC
BA213
16N10
BA167
BA184
15ET
BA244
BA242
K8F5615ETM
samsung nor flash
|
PDF
|
|
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samsung ba92
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8F56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K8F56
256Mb
co1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
samsung ba92
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TC58FVM7 T/B 2AFT (65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for
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TC58FVM7
128-MBIT
TC58FVM7T2A/B2A
134217728-bit,
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PDF
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BA251
Abstract: 16N10
Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8F56
256Mb
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
BA251
16N10
|
PDF
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k8a55
Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
Text: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8A56
256Mb
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
0070000h-007FFFFh
k8a55
BA251
samsung nor flash
BA253
BA217
BA155
ba198
|
PDF
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TSOPI56-P-1420-0
Abstract: h/73D36
Text: TC58FYM7 T/B 2AFT70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FYM7T2A/B2A features commands for
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TC58FYM7
2AFT70
128-MBIT
TC58FYM7T2A/B2A
134217728-bit,
TSOPI56-P-1420-0
h/73D36
|
PDF
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K8S2815ET
Abstract: K8S2815E ba148 BA213 samsung nor flash BA149
Text: K8S2815ET B C NOR FLASH MEMORY 128Mb C-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8S2815ET
128Mb
00h-027FFFh
018000h-01FFFFh
010000h-017FFFh
008000h-00FFFFh
007000h-007FFFh
006000h-006FFFh
005000h-005FFFh
004000h-004FFFh
K8S2815E
ba148
BA213
samsung nor flash
BA149
|
PDF
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TC58FYM7T
Abstract: BA128 TC58 TC58FYM7B2AFT70 TC58FYM7T2AFT70 BA73L BA261
Text: TC58FYM7 T/B 2AFT70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FYM7T2A/B2A features commands for
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TC58FYM7
2AFT70
128-MBIT
TC58FYM7T2A/B2A
134217728-bit,
TC58FYM7T
BA128
TC58
TC58FYM7B2AFT70
TC58FYM7T2AFT70
BA73L
BA261
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
K8F56
256Mb
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
|
PDF
|
ba139
Abstract: BA204 TSOPI56-P-1420-0 BA182 diode BA148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TC58FVM7T2
Text: TC58FVM7 T/B 2AFT (65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for
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Original
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TC58FVM7
128-MBIT
TC58FVM7T2A/B2A
134217728-bit,
ba139
BA204
TSOPI56-P-1420-0
BA182
diode BA148
TC58
TC58FVM7B2A
TC58FVM7T2A
TC58FVM7T2AFT65
TC58FVM7T2
|
PDF
|
BA138 diode
Abstract: BA100 diode BA243 equivalent BA169 BA138 diode BA148 BA244 ba139 BA122 BA140 diode
Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for
|
Original
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TC58FVM7
128-MBIT
TC58FVM7T2A/B2A
134217728-bit,
BA138 diode
BA100 diode
BA243 equivalent
BA169
BA138
diode BA148
BA244
ba139
BA122
BA140 diode
|
PDF
|
