8a223

Abstract: BA223 B588-50 BAR223-25 B427 B427-10 B427-15 B427-20 B587 B588
Contextual Info: f EDAL INDUSTRIES INC TS ÍE | 3[m71t, D D D D S M 7- 1 T p z 3 -a s' EDAL Series B427, BA223, B587, B588 v.^;.r Compact tubular construction and flexi­ ble leads facilitate circu it mounting, provide excellent thermal conductivity and elim inate sharp edges to reduce corona common to

k B688

Abstract: B688 8a223 BAR223-25 F 13000 B427 B427-10 B427-15 B587 B588
Contextual Info: is EDAL INDUSTRIES INC »EjamsTik Qoooan i I D 7~- ¿ 3-05- EDAL Series B427, BA223, B587, B588 Compact tubular construction and flexi­ ble leads facilitate circuit mounting, provide excellent thermal conductivity and eliminate sharp edges to reduce corona common to

B427

Abstract: B427-10 B427-15 B427-20 B587 B588 BA223 BA223-10 BA223-15 BA223-35
Contextual Info: f EDAL INDUSTRIES INC TS Í E | 3[m71t, D D D D S M 7- 1 T p z 3 -a s' EDAL Series B427, BA223, B587, B588 v.^;.r Compact tubular construction and flexi­ ble leads facilitate circuit mounting, provide excellent thermal conductivity and eliminate sharp edges to reduce corona common to

Diode Marking 1e

Abstract: diode HOH BA223 AM radio AM band switching diode
Contextual Info: N AÍ1ER PHILIPS/DISCRETE b^E D m b b S B ^ l GQEblUS MOM I IAPX BA223 I SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA Continuous reverse voltage

26166

Abstract: BA223 AM band switching diode diode D 07-15 15
Contextual Info: SbE T> 71100Sb m 00400*13 333 • P H I N BA223 T-D7-! S' PHILIPS INTERNATIONAL SbE ]> T O SILICON A.M. BAND SWITCHING DIODE The B A 223 is a switching diode in whiskerless glass encapsulation. It is intended fo r band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

Contextual Info: N AflER PHILIPS/DISCRETE b'lE D • bbS3131 DOEblUS 4Q4 « A P X BA223 SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA VR max.

BA223

Contextual Info: BA223 BA223 • ^ ffi^ ìiB / D im e n s io n s Unit : mm V r ' s ? Jl'in^ìììàtSi £ H O BA 223«, ftiffl, ìÉ ic ìiL /c ^ 'r v ic T - r „ iW ltfiia t, = i> x >-9-1:¿u 12:4: ¿-f T'#, f W K S i i l i , W ?ai£A >è& #|al<7)ÌiilST''Ì5è S t.

S1865

Abstract: S M B588 60m00 10H515
Contextual Info: _ EDAL Series B427, BA223, B587, B588 Com pact tu b u lar co nstru ctio n and flexi­ Se rie s B427 ble le a d s fa c ilita te c irc u it m o u n tin g , p ro v id e all e x c e lle n t th e rm al c o n d u c tiv ity a n d e lim in ate

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

BA223

Contextual Info: BA223 B A 2 2 3 £ " 7 • ^ J f i^ j iE I / D im e n s io n s U n it : mm B A 2 2 3 li, I t i l i , Ì Ì I C ^ U / J Ì J ' Ì v I C T 'f o T 'i , - tO T S Ìflli, •7'f S to 7 t— -5», l $ É 7 ^ f A ' Y 7 V - Ì Ì i a^ (7) E 16 H 4- tS ffl ^ ÓJgg T ' r o M ftM 3tEl i 200 m A a* f i

BA223

Abstract: BA223-20 BR427-50 BR427-40 dem 20486 syh-ly B427 B427-10 B427-15 B427-20 B427-25
Contextual Info: Sub-Miniature High Voltage Rectifiers Compact tubular construction and flexible leads facilitate circuit mounting, provide excellent thermal conductivity and eliminate sharp edges to reduce corona common to large, rectangular packages. Diodes are manufactured using

K8P2815UQB

Contextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

TC58FVM7B5BTG65

Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

06SEC

Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Contextual Info: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

TC58FVM7B5BTG65

Abstract: TC58FVM7t5BTG65 BK-10 HA145
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

BA254

Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
Contextual Info: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

PS224

Abstract: BA225 CR TIMER PS 224
Contextual Info: CR timer I BA225/BA225F/BA235/BA226/BA226F/BA236 The BA225, BA225F, BA235, BA226, BA226F, and BA236 are m onolithic ICs having independent mono and multi circuits which consum e very low current 0,75mA typ. . Using external resistors and capacitors, the timing control

BA226 diode

Abstract: BU2305
Contextual Info: Standard ICs Operational amplifier /co m p ara to r •Operational amplifier Part No. Supply voltage BA10324A/AF/AFV 3 -3 0 BA10358/F/N 3—30 1 ± 2 — ±18 BA4558/F/N ± 4 — ±18 BA728/F/N ± 2 — ±16 BA15532/F/N ± 3 -± 2 0 BA4510F ± 1 -± 3 .5 BA4560/F/N

BA142

Contextual Info: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,