BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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K8S5615ET
22F8h
22FEh
54MHz
66MHz
270sec
240sec
256Byte
00003FH
00007FH
BA512
ba469
BA516
BA508
BA323
BA340
BA476
BA507
BA312
BA379
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BA339
Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA339
BA516
BA501
BA379
BA481
ba473
BA450
BA508
ba204
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BA339
Abstract: K8C1215ET BA507
Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
K8C1215ET
BA507
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BA339
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
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ba508
Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary
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K5L5628JT
115-Ball
80x13
ba508
BA311
BA340
BA516
BA512
BA516 diode
BA339
BA379
BA295
ba473
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
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BA379
Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S1215ETC
K8S1215EBC
K8S1215EZC
512Mb
64FBGA,
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
0110000h-011FFFFh
BA379
BA506
BA438
BA508
BA306
ba473
BA431
BA356
BA471
ba258
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BA339
Abstract: ba406 K8F1315ETM
Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F12
512Mb
inh-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
BA339
ba406
K8F1315ETM
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ba508
Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
ba508
BA516 diode
BA512
BA507
ba358
BA339
BA505
BA459
BA516
BA329
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BA339
Abstract: AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F12
512Mb
couldresul0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
0070000h-007FFFFh
BA339
AMD+Athlon+64+X2+pin+diagram
kuhnke+z396.64
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transistor A1624
Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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K5N1229ACD-BQ12
512Mb
128Mb
transistor A1624
ba21 transistor
Samsung K5 128MB flash
BA252
BA339
512Mb nor flash memory
K5N1229ACD-BQ12
TBA 1205
K5n12
samsung, K5N
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BA339
Abstract: ba379 BA489
Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
ba379
BA489
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BA505
Abstract: BA389 PIN Diode BA339 ba308 BA379 BA343 ba473 BA512 ba508 BA306
Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F12
512Mb
0030000h-003FFFFh
0020000h-002FFFFh
0010000h-001FFFFh
000C000h-000FFFFh
0008000h-000BFFFh
0004000h-0007FFFh
0000000h-0003FFFh
00000h
BA505
BA389 PIN Diode
BA339
ba308
BA379
BA343
ba473
BA512
ba508
BA306
|
|
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BA425
Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA425
BA512
BA507
BA379
BA324
BA377
BA497
BA339
BA413
ba418
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BA306
Abstract: BA339
Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA306
BA339
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BA512
Abstract: BA389 PIN Diode BA333 ba508 BA379 BA306 BA507 BA341 BA459 BA343
Text: K8C10 11 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification K8C10(11)INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C10
512Mb
fah-007FFFFh
0060000h-006FFFFh
0050000h-005FFFFh
0040000h-004FFFFh
0030000h-003FFFFh
0020000h-002FFFFh
0010000h-001FFFFh
BA512
BA389 PIN Diode
BA333
ba508
BA379
BA306
BA507
BA341
BA459
BA343
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BA471
Abstract: K8F12 BA459 BA313 BA318 BA343 BA379 BA402 BA514 BA280
Text: Advanced Information K8F12 13 15ET(B)M Flash Memory 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8F12
512Mb
00000h
0000000h-00001FFh
64-Ball
08MAX
BA471
BA459
BA313
BA318
BA343
BA379
BA402
BA514
BA280
|
BA449
Abstract: BA433
Text: O bjective specification Philips Sem iconductors Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting FEATURES TEA1064B • Line loss compensation line current dependent for microphone and earpiece amplifiers (not used for
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OCR Scan
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PDF
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TEA1064B
TEA1064B
PCD3310.
PCD331X
1064B
BA449
PCD3344
BA449
BA433
|