ELECTRONIC BALLAST DIAGRAM 28w
Abstract: fluorescent ballasts 36w t8 36w electronic ballast electronic ballast t8 36W Ballast 2 t8 Electronic ballast 36W 136-4-UN Electronic ballast 58W EN60929 Electronic ballast 28W
Text: BALASTOS ELECTRÓNICOS PARA LÁMPARA FLUORESCENTE T8. VOLTAJE UNIVERSAL 110-260V ELECTRONIC BALLASTS FOR T8 FLUORESCENT LAMP. UNIVERSAL VOLTAGE 110-260V ESPECIALIDADES LUMINOTÉCNICAS, S.A. Información de producto / Product information L BE C * R - 13 Spa
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10-260V
ELECTRONIC BALLAST DIAGRAM 28w
fluorescent ballasts 36w
t8 36w electronic ballast
electronic ballast t8
36W Ballast 2 t8
Electronic ballast 36W
136-4-UN
Electronic ballast 58W
EN60929
Electronic ballast 28W
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Mallory Ignition
Abstract: No abstract text available
Text: FORM 1214M REV. J 09/03 INSTALLATION INSTRUCTIONS UNILITE DISTRIBUTOR This product is applicable to pre-1966 California and pre-1968 federally certified passenger cars. It is also applicable to non-emission controlled trucks and similar vehicles. It is not applicable or intended for use on
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1214M
pre-1966
pre-1968
Mallory Ignition
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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cp clare reed relay
Abstract: ECG transistor replacement guide book free sip 1A05 12V 40W Fluorescent Lamp Driver circuit Diagram CP Clare Prme 15002 cp clare u prma 2a05 REED RELAY 15005 LSR2C05 CLARE REED RELAY PRMA 1a24 clare prme 15005
Text: SECTIONS CP Clare Company Overview 1 Product Selection Guide 2 Advanced Magnetic Products 3 Circuit Products 4 Reed Relay Products 5 Switch and Sensor Products 6 Surge Protection Products 7 Glossary 8 Index by Part Number 9 www.cpclare.com iii TABLE OF CONTENTS
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sot23 1303
Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Text: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers
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MA4T3243
OT-23
MA4T324335
sot23 1303
IC 3263
NPN bipolar junction transistors max hfe 2000
1272 hybrid
1303 SOT23
MA4T324335
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ecg replacement guide
Abstract: OSRAM t8 OSRAM led lamp osram tube osram ballast circuit 36w fluorescent lighting osram tube led OSRAM luminaire osram t8 18 Luminaire Photometric data
Text: www.osram.de SubstiTUBE – ST8-SD4 Datasheet VDE certified innovative LED-lamp, easy and safe to use in CCG installations as direct retrofit. Energy saving potential of up to 50% by replacing 36W T8 fluorescent tubes. Applicable in warehouses, supply rooms,
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ST8-SD4-765
ST8-SD4-840
ST8-SD4-830
1EZW001GB
400D125GB
1EBW004GB
ecg replacement guide
OSRAM t8
OSRAM led lamp
osram tube
osram ballast circuit
36w fluorescent lighting
osram tube led
OSRAM luminaire
osram t8 18
Luminaire Photometric data
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ASI10533
Abstract: ASI2223-20
Text: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for high gain & efficiency telemetry applications. A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks
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ASI2223-20
ASI10533
ASI2223-20
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MOV 270/20
Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003
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Untitled
Abstract: No abstract text available
Text: INSTALLATION INSTRUCTIONS INSTRUCCIONES DE INSTALACIÓN INSTRUCTIONS DE POSE Remove all wires connected to the + positive terminal of the original coil and connect here, to the positive (+) terminal of the Mallory coil. Do not remove or bypass the original equipment resistor for any reason (Terminal may be marked BAT).
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FORMA1264M
1264M
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X1311
Abstract: 59014 X4013 X4111 SMPS 265 fuse 662 610 664
Text: PTC Thermistors for overload protection, general purpose Catalogue number 2322 . . . . . . . . Int 25 °C mA It 25 °C (mA) R25 (W) Umax DC (V) Imax Dmax (A) (mm) Very low voltage types (20V) 660 53514 660 54714 661 56114 661 57014 661 59014 662 51224 662 51624
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X9491
X1311
X1811
X2711
X3211
X4111
X4711
X5411
X6111
X7011
59014
X4013
SMPS 265
fuse 662
610 664
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ST1803DFP
Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D
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OT-32
O-126
BD433
BD435
MJE521
BD135
BD437
BD235
BD439
2N5191
ST1803DFP
BUX98PI
BU808DFI equivalent
BUV48FI
electronic balast
ST1803DHI equivalent
st2001hi
SOT93 package
BUX48A
ST2310HI equivalent
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ASI2223-20
Abstract: ASI10533
Text: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks
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ASI2223-20
ASI10533
ASI2223-20
ASI10533
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Schaffner catalog
Abstract: No abstract text available
Text: Product selection chart. DC 2009 Headquarters Schaffner EMV AG 4542 Luterbach Switzerland T +41 32 681 66 26 F +41 32 681 66 41 sales@schaffner.com www.schaffner.com China Schaffner EMC Ltd. Shanghai T +86 21 6813 9855 cschina@schaffner.com Spain Schaffner EMC España
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690-061R
Schaffner catalog
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610 664
Abstract: No abstract text available
Text: PTC Thermistors, overload protection/general purpose Product information Dimensions Catalogue Int It R25 Vmax Imax Dmax mm number 2322 . . . . . . . . 25 °C (mA) 25 °C (mA) (Ω) (V) (A) (mm) Very low voltage types (20 V) 350 470 610 700 900 1200 1600
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PLACA DE ORIFICIO
Abstract: No abstract text available
Text: Ignition Module Instruction Manual Part#: 605, 609 IGNITION MODULE PN 605 and PN 609 INSTALLATION AND ELECTRICAL WIRING PROCEDURE A .0075" polyester gauge is provided to assist in setting the pickup gap. PN 605/UNILITE® MODULE: Apply a thin coat of silicone grease to the
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605/UNILITEÂ
PLACA DE ORIFICIO
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz
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MA4T3243
MA4T324335
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Untitled
Abstract: No abstract text available
Text: 37E D SENELAB LTD Ö1331Ö? 0 0 0 0 2 7 3 T-39-11 SEMELAB ¡qoo £ 0 / >S//¿ g BUZ 74 MOS POWER MECHANICAL DATA N-Channel Enhancement M ode Dimensions in mm _10.3_ mux. A .5 m o x 1.3 -W 3.6H- J L . 2. 8 5.9 TÏ mi n. APPLICATIONS 5.1 15.8 X mÌQ ax. L J .J
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T-39-11
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acrian RF POWER TRANSISTOR
Abstract: PU 391 acrian inc
Text: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold
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U14Q9
400mA,
D0D1411
10nfd@
acrian RF POWER TRANSISTOR
PU 391
acrian inc
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2SA1080
Abstract: No abstract text available
Text: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are
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2SA1080
O-Z20
2SA1080
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2sa 940
Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are
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2SC2530
35MHz
2sa 940
transistor 2SA 374
fujitsu RET transistors
2sa fujitsu
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2SA1080
Abstract: 2SC2530
Text: FUJITSU SUÇON HKH S PED POWER TRANSISTORS ^ September 1979 SILICON PNP RING EMITTER TRANSISTOR RET The 2SA 1080 is a silicon PNP M.C.-Head a m p lifie r use transistor fabricated w ith F ujitsu's unique Ring E m itte r Transistor (RET) technology. RET devices are
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2SA1080
30MHz
10OnA,
lc-10mA
10MHz
300ms
2SA1080
2SC2530
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2sc2530
Abstract: 2SA amplifier TRANSISTOR 2SC balast
Text: F U J IT S U SliCON HIGH SPEED POWER TRANSISTORS 2SC 2530 September 1979 <<* SILICON NPN RING EMITTER TRANSISTOR RET The 2SC 2530 is a silicon NPN M.C.-Head am plifier use transistor fabricated w ith Fujitus's unique Ring Em itter Transistor (RET) technology. RET devices are
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2SC2530
2SC2530
T0-220
10OnA,
2SA amplifier
TRANSISTOR 2SC
balast
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21E sot
Abstract: IC 3263 1303 SOT23
Text: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz
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OCR Scan
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MA4T3243
MA4T324335
21E sot
IC 3263
1303 SOT23
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2SC2530
Abstract: No abstract text available
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC2530 Silicon High Speed Power Transistor DESCRIPTION T h e 2S C 2 5 3 0 is a silicon N P N M .C .*H e ad a m p lifie r use transistor fabricated w ith Fujitus's unique Ring E m itte r Transistor R E T technology. R E T devices are
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2SC2530
300ns
2SC2530
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