TPV 3100
Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must
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AN1034/D
AN1034
TPV 3100
TPM-4100 application note
transistor TPV 3100
trw rf
disadvantages of Magic tee
trw rf semiconductors
TPV-3100
TPV3100
108AN
zf transmission
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Untitled
Abstract: No abstract text available
Text: 3A512 SMT Low Impedance Balun VER11/8/00 Description: The 3A512 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering PDC applications. The 3A512 is ideal for high volume manufacturing and is
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3A512
VER11/8/00
-55oC
125oC
3A512
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470 860 mhz AN
Abstract: No abstract text available
Text: 3A325 SMT Balun VER10/05/99 Features: Description: • • • • • • • The 3A325 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering TV broadcast applications. The 3A325 has an unbalanced
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3A325
VER10/05/99
3A325
470 860 mhz AN
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balun transformer 200 ohm
Abstract: No abstract text available
Text: 3W512 SMT Low Impedance Balun VER11/8/00 Description: The 3W512 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering DCS, PCS, W-CDMA and other 3G applications. The 3W512 is ideal for high
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3W512
VER11/8/00
-55oC
125oC
3W512
balun transformer 200 ohm
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impedance transformer 50 ohm
Abstract: No abstract text available
Text: 3A412 SMT Low Impedance Balun VER11/3/00 Description: The 3A412 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. The 3A412 is ideal for high volume
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3A412
VER11/3/00
NMT900
-55oC
125oC
3A412
impedance transformer 50 ohm
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3A525
Abstract: No abstract text available
Text: Model 3A525 Rev. A Balun Transformers 50Ω to 25Ω Balanced Description The 3A525 is a low profile balanced to unbalanced transformer in an easy to use surface mount package covering Japanese PDC, DCS and PCS receive push-pull amplifier and mixer applications. The 3A525 has an
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3A525
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AN025 Push-Pull High IP2 Amplifiers
Abstract: ECB-100331 NGA-486 sga-6289 C 32725 ETC1-1-13 AN025 wide bandwidth D 811-25
Text: DESIGN APPLICATION NOTE - AN025 Push-Pull High IP2 Amplifiers Abstract: With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain,
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AN025
NGA-486
SGA-6289,
V/150mA,
SGA-6289
V/160mA,
AN025 Push-Pull High IP2 Amplifiers
ECB-100331
C 32725
ETC1-1-13
AN025
wide bandwidth
D 811-25
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agilent ads balun
Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
Text: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data
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EB212
agilent ads balun
EB212
MRF19125
MRF21180
J493
advanced design system
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7472B
Abstract: RF push pull power amplifier 1008AF-901XKLC TC1-33-75G2 avx 603 TAT7472B LQH31HNR50K 001 soic TAT7472 ESD 2255
Text: 75 Ohm RF Amplifier 50-1000 MHz TAT 7472B Advanced Product Information Overview The TAT7472B is a general purpose push pull CATV 75 Ohm RF Amplifier designed for use up to 1000 MHz. It is fabricated using Triquint’s GaAs pHEMT technology to optimize performance and cost. This high
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7472B
TAT7472B
R90728
7472B
RF push pull power amplifier
1008AF-901XKLC
TC1-33-75G2
avx 603
LQH31HNR50K
001 soic
TAT7472
ESD 2255
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TRANSISTOR Z4
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
MRF392
TRANSISTOR Z4
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transistor z5
Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392
i1-44-844-8298
transistor z5
erie redcap
IC 2025
NPN TRANSISTOR Z4
RF push pull power amplifier
TRANSISTOR Z4
redcap
7w120
transistor D 716
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Untitled
Abstract: No abstract text available
Text: AH11 The Communications Edge TM High Dynamic Range Dual Amplifier Product Features • 150 – 3000 MHz • +44 dBm OIP3 balanced configuration • +48 dBm OIP3 (dual push-pull configuration) • Single-ended performance: ! 13.5 dB Gain ! 2.7 dB Noise Figure
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1-800-WJ1-4401
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RF push pull power amplifier
Abstract: 7466 class A push pull power amplifier class B push pull power amplifier balun ntsc MABA-007681-CT2010 R81017 186MA 04025A151JAT2A balun push pull
Text: 75 Ohm RF Amplifier 50-1300 MHz TAT7466 Advanced Product Information Overview The TAT7466 is a 75 Ohm RF Amplifier designed for use up to 1300 MHz. The TAT7466 contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to
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TAT7466
TAT7466
195mA
195mA,
R81017
RF push pull power amplifier
7466
class A push pull power amplifier
class B push pull power amplifier
balun ntsc
MABA-007681-CT2010
R81017
186MA
04025A151JAT2A
balun push pull
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11978
Abstract: No abstract text available
Text: AH11 The Communications Edge TM High Dynamic Range Dual Amplifier Product Features • 150 – 3000 MHz • +44 dBm OIP3 balanced configuration • +48 dBm OIP3 (dual push-pull configuration) • Single-ended performance: 13.5 dB Gain 2.7 dB Noise Figure
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11978
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Z1 Transistor
Abstract: MRF392
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
MRF392/D*
Z1 Transistor
MRF392
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MRF392
Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392/D*
MRF392
TRANSISTOR Z4
3142 equivalent
J044
Z1 Transistor 6 pin
transistor Z6
Z6 82
mini cap
744A-01
LX125
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thermistor r5t
Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373S
MRF373
31JUL04
31JAN05
thermistor r5t
chip resistor 1206
c19a
S1239
MOTOROLA P
C3B Kemet
bc17a
GX-0300-55
R7B Connector
RO3010
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6537 MARKING CODE
Abstract: No abstract text available
Text: AH11 The Communications Edge TM Product Information High Dynamic Range Dual Amplifier Product Features x 150 – 3000 MHz x +44 dBm OIP3 balanced configuration x +48 dBm OIP3 (dual push-pull configuration) x Single-ended performance: 13.5 dB Gain 2.7 dB Noise Figure
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1-800-WJ1-4401
6537 MARKING CODE
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MRF373 PUSH PULL
Abstract: c19a chip resistor 1206 rogers C14A MRF373 MRF373 print circuit B07T MRF373S R7B Connector
Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF373/D
MRF373
MRF373S
MRF373
MRF373 PUSH PULL
c19a
chip resistor 1206
rogers
C14A
MRF373 print circuit
B07T
MRF373S
R7B Connector
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MRF373
Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373
MRF373S
MRF373)
MRF373
DEVICEMRF373/D
RO3010
A419
MRF373 PUSH PULL
C14A
MRF373 print circuit
P1210
MRF373S
atc 174
BUY13
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MRF373R1
Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373/D
MRF373R1
MRF373SR1
MRF373R1
C19B
C14A
rf push pull mosfet power amplifier
B07T
MRF373SR1
chip resistor 1206
ATC 700 B 101 G P
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Untitled
Abstract: No abstract text available
Text: The EMC balun replaces the coaxial cable or the printed circuit board PCB , traditionally used to match push pull amplifiers. Push pull amplifiers use a pair of balanced/unbalanced transmission lines (baluns) to provide the proper 180° out of phase signal configuration
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B4-1900-50-25
25Qout)
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balun push pull
Abstract: No abstract text available
Text: SURFACE MOUNT BALUNS ^ Save money in volume production by replacing manually installed baluns with our surface mount baluns! Available in tape-and-reel packaging. Patent pending. The EMC balun replaces the coaxial cable or the printed circuit board PCB , traditionally used to match push pull amplifiers. Push
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B4-1900-50-25
balun push pull
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GSC371BAL2000
Abstract: No abstract text available
Text: HIGH POWER CHIP BALUN •Compact & High power handling. A "9 - W I S I T o •For Push-Pull ended power transistor. • 7 'V V I ^U 0 S S lca@ T ;T o •GSC-BAL series •Adjustment - free. Frequency Type Allowable Power [MHz] GSC184-BAL0600 120W 470-860 GSC172-BAL0800
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GSC184-BAL0600
GSC172-BAL0800
GSC371-BAL2000
GSC376-BAL2500
To200
GSF746-LPF2700
GSF603-SEP0918
SF606-SEP1021
GSF710-SEP0918
L880-960
GSC371BAL2000
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