BANK Search Results

BANK Result Highlights (5)

Part	Manufacturer	Description
707278L15PF9	Renesas Electronics Corporation	Bank Switchable DP RAM
707278S12PF8	Renesas Electronics Corporation	Bank Switchable DP RAM
707278S25PF9	Renesas Electronics Corporation	Bank Switchable DP RAM
707288L15PFG	Renesas Electronics Corporation	Bank Switchable DP RAM
707288L25PF8	Renesas Electronics Corporation	Bank Switchable DP RAM

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Monolithic Power Systems MEZS7-SHAREDPOWERBANK EVAL BOARD FOR MP2696A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MEZS7-SHAREDPOWERBANK	Box	7		1	1 $75 10 $75 100 $75 1000 $75 10000 $75	Buy Now
Avnet Americas	MEZS7-SHAREDPOWERBANK	Box		12 Weeks	1	1 $82.19966 10 $80.39986 100 $75 1000 $75 10000 $75	Buy Now
Newark	MEZS7-SHAREDPOWERBANK	Bulk	2		1	1 $90.51 10 $90.51 100 $90.51 1000 $90.51 10000 $90.51	Buy Now
Monolithic Power Systems MEZS7-1S-4SPDPOWERBANK EVAL BOARD FOR CCG3PA, MP2651
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MEZS7-1S-4SPDPOWERBANK	Box	5		1	1 $76.09 10 $76.09 100 $76.09 1000 $76.09 10000 $76.09	Buy Now
Avnet Americas	MEZS7-1S-4SPDPOWERBANK	Box			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Monolithic Power Systems MEZS7-1SDAPOWERBANK EVAL BOARD FOR MP2632
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MEZS7-1SDAPOWERBANK	Box			1	1 $64.07 10 $50 100 $50 1000 $50 10000 $50	Buy Now
Avnet Americas	MEZS7-1SDAPOWERBANK	Box		12 Weeks	1	1 $54.79978 10 $53.5999 100 $50 1000 $50 10000 $50	Buy Now
Monolithic Power Systems MEZS7-1SSAPOWERBANK EVAL BOARD FOR MP2632
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MEZS7-1SSAPOWERBANK	Box			1	1 $64.07 10 $50 100 $50 1000 $50 10000 $50	Buy Now
Avnet Americas	MEZS7-1SSAPOWERBANK	Box		12 Weeks	1	1 $54.79978 10 $53.5999 100 $50 1000 $53.39741 10000 $53.39741	Buy Now
ams OSRAM Group LW-T6SG-AABA-NKOL-0-20-R18-ZI OSRAM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LW-T6SG-AABA-NKOL-0-20-R18-ZI	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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BANK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: bq2204A X4 SRAM Nonvolatile Controller Unit General Description Features ä Power monitoring and switching for 3-volt battery-backup applications ä Write-protect control ä 2-input decoder for control of up to 4 banks of SRAM ä 3-volt primary cell inputs	Original	bq2204A	PDF
45VM32160D Abstract: No abstract text available Text: IS42/45VM32160D 4M x 32Bits x Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are	Original	IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D	PDF
SM81600E Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge	Original	IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI	PDF
IS42VS16100E Abstract: 42VS16100E IS42VS16100E-75BLI Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11	Original	IS42VS16100E 4000-mil 60-ball 400-mil IS42VS16100E 42VS16100E IS42VS16100E-75BLI	PDF
W9825G6JH Abstract: A-04 w9825g6jh-6l w9825g6jh-6 Text: W9825G6JH 4 M  4 BANKS  16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3	Original	W9825G6JH A-04 w9825g6jh-6l w9825g6jh-6	PDF
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P3323AT2-C1H/H 32M X 72 SDRAM DIMM with PLL & Register based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P3323AT2-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory	Original	AMP377P3323AT2-C1H/H AMP377P3323AT2-C1H/H 400mil 18-bits 168-pin 0022uF 100MHz 100MHz	PDF
74605 Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED16P664LS49-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED16P664LS49-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AVED16P664LS49-C75	Original	AVED16P664LS49-C75 AVED16P664LS49-C75 400mil 144-pin 144-pin 74605	PDF
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723AT2-C1H 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723AT2-C1H is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723AT2-C1H	Original	AMP366P1723AT2-C1H AMP366P1723AT2-C1H 400mil 168-pin 100MHz	PDF
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory	Original	AMP366P1623BTE-C75/H AMP366P1623BTE-C75/H 400mil 168-pin 168-pin6 100MHz PC100	PDF
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic	Original	AMP374P1723AT2-C1L AMP374P1723AT2-C1L 400mil 168-pin 168-MHz 100MHz	PDF
AVED8P664LS48-C75 Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P664LS48-C75 8M X 64 SDRAM SODIMM based on 4M X 16, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMS with SPD DESCRIPTION AVED Memory Products AVED8P664LS48-C75 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The	Original	AVED8P664LS48-C75 AVED8P664LS48-C75 400mil 144-pin non-256M	PDF
Untitled Abstract: No abstract text available Text: PI6C49S1504 High Performance Selectable 1:4 Differential Fanout Buffer Features Description ÎÎ4 differential outputs with 2 banks The PI6C49S1504 is a high performance fanout buffer devicewhich supports up to 1.5GHz frequency. The device also uses Pericom's proprietary input detection technique to make sure	Original	PI6C49S1504 PI6C49S1504 200MHz 28-Pin 173mil MO-153F/AE PD-1313 PI6C49S1504LIE	PDF
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723BT2-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723BT2-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723BT2-C75	Original	AMP366P1723BT2-C75 AMP366P1723BT2-C75 400mil 168-pin 100MHz PC100	PDF
Untitled Abstract: No abstract text available Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323CT2-C75 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323CT2-C75 is a 32M bit X 72 Synchronous Dynamic	Original	AMP374P3323CT2-C75 AMP374P3323CT2-C75 400mil 168-pin 100MHz PC100	PDF

W9425G6JH Abstract: No abstract text available Text: W9425G6JH 4 M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4	Original	W9425G6JH	PDF
AS4SD32M16 Abstract: No abstract text available Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive	Original	AS4SD32M16 512Mb: 192-cycle -40oC -55oC 125oC AS4SD32M16	PDF
Untitled Abstract: No abstract text available Text: SY89538L 3.3V Precision LVPECL and LVDS Programmable Multiple Output Bank Clock Synthesizer and Fanout Buffer with Zero Delay General Description The SY89538L integrated programmable clock synthesizer and fanout is part of a precision PLLbased clock generation family optimized for	Original	SY89538L SY89538L 750MHz M9999-092905-A	PDF
MICRON BGA PART MARKING Abstract: No abstract text available Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate	Original	288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING	PDF
Untitled Abstract: No abstract text available Text: 2.5V, 2GHz ANY DIFF. IN-TO-LVDS Precision Edge SY89872U PROGRAMMABLE CLOCK DIVIDER/FANOUT Final BUFFER WITH INTERNAL TERMINATION FEATURES DESCRIPTION • Guaranteed AC performance over temperature and voltage: • >2GHz FMAX • < 750ps Tpd matched delay between banks	Original	SY89872U 750ps 200ps	PDF
Untitled Abstract: No abstract text available Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive	Original	AS4SD2M32 64-Mb) 133MHz TSOPII-86LD -40oC -55oC 125oC AS4SD2M32	PDF
SMOS182 Abstract: No abstract text available Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1	OCR Scan	TMS626802, TMS636802 1048576-WORD SMOS182 100-MHz S626802	PDF
37C15 Abstract: No abstract text available Text: TCM37C13, TCM37C14, TCM37C15 PCM COMBO WITH PROGRAMMABLE GAIN CONTROL S L W S 0 1 8 - JUNE 1996 • Meets CCITT/ D3/D4 Channel Bank Recommendations for Input Signals Greater than -5 5 dBmO • Programmable Transmit and Receive Gain Control with Pin-Selectable	OCR Scan	TCM37C13, TCM37C14, TCM37C15 TCM37C14 TCM29C13 TCM37C13 37C15	PDF
Untitled Abstract: No abstract text available Text: Quality Semiconductor, I nc. QS5940 SuperSync PCI Controller PLL Clock Driver PRELIMINARY FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • • QS5940 is a high-performance, low skew, low jitter phase-locked loop PLL clock driver. Two banks of	OCR Scan	QS5940 28-pin 33MHz, 66MHz, 99MHz MDSC-00032-01	PDF
74ALS6302 Abstract: la 7184 74ALS6301 M 6302 XP 74als630 Text: SN74ALS6301, SN74ALS6302 DYNAMIC MEMORY CONTROLLERS D 2 9 0 0 . JA N U A R Y 1 9 8 6 —REVISED M A R C H 1 9 8 8 Provides Control for 16K, 64K. 256K, and 1M Dynamic RAMs SN 74ALS6301, S N 7 4A LS 6 30 2 . . Highest-Order Two-Address Bits Select One of Four Banks of RAMs	OCR Scan	SN74ALS6301, SN74ALS6302 74ALS6301, 74ALS6302 la 7184 74ALS6301 M 6302 XP 74als630	PDF

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BANK Search Results

BANK Result Highlights (5)

BANK Price and Stock

Monolithic Power Systems MEZS7-SHAREDPOWERBANK

Monolithic Power Systems MEZS7-1S-4SPDPOWERBANK

Monolithic Power Systems MEZS7-1SDAPOWERBANK

Monolithic Power Systems MEZS7-1SSAPOWERBANK

ams OSRAM Group LW-T6SG-AABA-NKOL-0-20-R18-ZI

BANK Datasheets Context Search

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45VM32160D

SM81600E

IS42VS16100E

W9825G6JH

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74605

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AVED8P664LS48-C75

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W9425G6JH

AS4SD32M16

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MICRON BGA PART MARKING

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SMOS182

37C15

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74ALS6302