Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BB REF 200U Search Results

    BB REF 200U Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    78548-114HLF Amphenol Communications Solutions 78548-114HLF-B/S II DR REF Visit Amphenol Communications Solutions
    TIPD144 Texas Instruments Comparator with Hysteresis Reference Design Visit Texas Instruments
    TLV40X1EVM Texas Instruments TLV40x1 Integrated reference comparator evaluation module Visit Texas Instruments Buy
    TIPD128 Texas Instruments Capacitive Load Drive Verified Reference Design Using an Isolation Resistor Visit Texas Instruments
    TIPD109 Texas Instruments Simple Thermocouple Measurement Solution Reference Design, <1°C Accurate Visit Texas Instruments

    BB REF 200U Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Mdt10p73k

    Abstract: MDT10P73 MDT10P73K11 MDT10P73S11 MDT10P73SS11
    Text: MDT10P73 BB 1. General Description -CCP1, CCP2, SCM, USAR, USAT A/D converter module: This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power -5 analog inputs multiplexed into one A/D


    Original     		MDT10P73 16-bit 120uA 100uA 1000ns Mdt10p73k MDT10P73K11 MDT10P73S11 MDT10P73SS11 PDF

    C1204B

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM416V1004BT 16Bit 1Mx16 C1204B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or


    OCR Scan     		KM44C16004B, KM44C16104B 16Mx4 KM44C16004B KM44C16104B tASC26ns, PDF

    Class d 1000 WATT

    Abstract: EMCO High Voltage uwr-5/4000-d12a-c 1000 Watt dc/dc converter schematic ROTA E Series sp 500 48v transorb failure UWR-12/1650-D48A ZENER B02 D48A
    Text: UWR Series Single Output, High Reliability, 2" x 2", 14-20 Watt, DC/DC Converters Typical units FEATURES PRODUCT OVERVIEW Low cost! Highly reliable! Proven SMT-on-pcb construction Designed to meet UL/ EN60950, BASIC insulation D48A models mark available (48VIN models)


    Original     		EN60950, 48VIN 8-75V 1500Vdc UWR14-20 Class d 1000 WATT EMCO High Voltage uwr-5/4000-d12a-c 1000 Watt dc/dc converter schematic ROTA E Series sp 500 48v transorb failure UWR-12/1650-D48A ZENER B02 D48A PDF

    KM44C4100BK

    Abstract: No abstract text available
    Text: KM4 4 C 4 1 OOB K CMOS D R AM ELECTRONICS 4 M X 4 Bit C M O S Dynamic H A M with Fast Page M ode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		16Mx4, 512Kx8) KM44C4100BK KM44C4100BK PDF

    pt100 pspice

    Abstract: ,pt100 with wheatstone bridge instrument SRHR-233 HS15P SRHR-233C circuit humidity sensor HS15P rtd pt100 transmitter circuit using opamp Wheatstone Bridge INA 125 P din 43760 its 90 NTC 20K honeywell
    Text: Sensors and the Analog Interface by Thomas Kuehl – Senior applications engineer Texas Instruments - Tucson In this presentation we will discuss the way to monitor many different physical phenomena, such as temperature, air flow, humidity, and power. We will discuss


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A73P24P01 Preliminary Mouse, Keyboard Transmitter Document Title Mouse, Keyboard Transmitter Revision History Rev. No. 0.0 History Issue Date Remark Initial issue January 3, 2002 Preliminary Important Notice: AMIC reserves the right to make changes to its products or to discontinue any integrated circuit product or


    Original     		A73P24P01 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT3013B 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD FEATURES n n n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 65µA Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed


    Original     		LT3013B 250mA, 400mV 250mA 16-Lead 12-Pin O220-5, S0T-223, LT1964 200mA, PDF

    3013b

    Abstract: LT3013B LT3013BEDE LT3013BEFE converter s16 6-pin 4.5V TO 100V INPUT REGULATOR
    Text: LT3013B 250mA, 4V to 80V Low Dropout Micropower Linear Regulator with PWRGD FEATURES n n n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 65 A Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed


    Original     		LT3013B 250mA, 400mV 250mA 16-Lead 12-Pin 40VRMS O220-5, S0T-223, LT1964 3013b LT3013B LT3013BEDE LT3013BEFE converter s16 6-pin 4.5V TO 100V INPUT REGULATOR PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    OCR Scan     		KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 PDF

    d1n914

    Abstract: diode d1n914 3012hfe 3012EFE D1N91 LT3012HFE FE16 LT3012 LT3012EDE LT3012EFE
    Text: LT3012 250mA, 4V to 80V Low Dropout Micropower Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n Wide Input Voltage Range: 4V to 80V Low Quiescent Current: 40 A Low Dropout Voltage: 400mV Output Current: 250mA No Protection Diodes Needed Adjustable Output from 1.24V to 60V


    Original     		LT3012 250mA, 400mV 250mA 16-Lead 12-Pin 250mA LT3013/LT3013H TSSOP-16E d1n914 diode d1n914 3012hfe 3012EFE D1N91 LT3012HFE FE16 LT3012 LT3012EDE LT3012EFE PDF

    Untitled

    Abstract: No abstract text available
    Text: 64Mb Synchronous DRAM Specification P2V64S406TP Deutron Electronics Corp. 8F, 68, SEC. 3, NANKING E. RD., TAIPEI 104, TAIWAN, R. O. C. TEL : 886-2-2517-7768 FAX : 886-2-2517-4575 http: // www.deutron.com.tw 64Mb Synchronous DRAM P2V64S406TP 4-bank x 1,048,576-word x 16-bit


    Original     		P2V64S406TP 576-word 16-bit) 400mil 875mil PDF

    M12L64164A-7T

    Abstract: M12L64164A-7T 54 PIN PIN OUT DATA 1M x 16-Bit x 4 Banks synchronous DRAM
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-6T 166MHz M12L64164A-7T 143MHz M12L64164A M12L64164A-7T M12L64164A-7T 54 PIN PIN OUT DATA 1M x 16-Bit x 4 Banks synchronous DRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12S64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		M12S64164A M12S64164A-7TG M12S64164A-7BG 143MHz M12S64164A PDF

    M12L64164A-7TG

    Abstract: M12L64164A M12L64164A-5TG M12L64164A-6TG M12L64164A-7T
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-5TG 200MHz M12L64164A-6TG 166MHz M12L64164A-7TG 143MHz M12L64164A-7TG M12L64164A M12L64164A-5TG M12L64164A-6TG M12L64164A-7T PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L64164A Operation temperature condition -40℃ ~ 85℃ SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		M12L64164A 400mil 875mil M12L64164A-6TIG 166MHz M12L64164A-7TIG 143MHz M12L64164A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-6T 166MHz M12L64164A-7T 143MHz M12L64164A-6TG M12L64164A-7TG PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-6T 166MHz M12L64164A-7T 143MHz M12L64164A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12S64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		M12S64164A M12S64164A-6TG M12S64164A-6BG M12S64164A-7TG M12S64164A-7BG M12S64164A-10TG M12S64164A-10BG 166MHz 143MHz PDF

    M12L64164A

    Abstract: No abstract text available
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		M12L64164A M12L64164A-5TG M12L64164A-6TG M12L64164A-7TG M12L64164A-5BG M12L64164A-6BG M12L64164A-7BG 200MHz 166MHz 143MHz M12L64164A PDF

    M12L64164A

    Abstract: M12L64164A-5TG M12L64164A-7TG M12L64164A-6TG M12L64164A-7T
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-5TG 200MHz M12L64164A-6TG 166MHz M12L64164A-7TG 143MHz M12L64164A-5BG M12L64164A M12L64164A-5TG M12L64164A-7TG M12L64164A-6TG M12L64164A-7T PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-6T 166MHz M12L64164A-7T 143MHz M12L64164A-6TG M12L64164A-7TG PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-5TG 200MHz M12L64164A-6TG 166MHz M12L64164A-7TG 143MHz M12L64164A-5BG PDF

    M12L64164A-7T

    Abstract: No abstract text available
    Text: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L64164A 400mil 875mil M12L64164A-6T M12L64164A-7T M12L64164A-6TG M12L64164A-7TG 166MHz 143MHz PDF