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    pc133 sdram

    Abstract: HYM4V33100DTYG-75
    Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one


    Original     		PDF 1Mx32 PC133 1Mx16 HYM4V33100DTYG 1Mx16bits 1Mx16bits 400mil 50pin 132pin pc133 sdram HYM4V33100DTYG-75

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    Original     		PDF KMM366F224CJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin KMM366F224CJ1

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    Abstract: No abstract text available
    Text: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124CE2/CJ2 M53210124CE2/CJ2 1Mx16, M53210124C 1Mx32bits M53210124C 1Mx16bits 42-pin 72-pin

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    Abstract: No abstract text available
    Text: DRAM MODULE M53210224CW2/CB2 M53210224CW2/CB2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224CW2/CB2 M53210224CW2/CB2 1Mx16, M53210224C 2Mx32bits M53210224C 1Mx16bits 42-pin 72-pin

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    Abstract: No abstract text available
    Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hyundai HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one


    Original     		PDF 1Mx32 PC133 1Mx16 HYM4V33100DTYG 1Mx16bits 400mil 50pin 132pin

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    Abstract: No abstract text available
    Text: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits 1Mx16bits 42-pin 72-pin M53210124DE2/DJ2

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224BJ1 KMM366F224BJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224BJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224BJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    Original     		PDF KMM366F224BJ1 KMM366F224BJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin

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    Abstract: No abstract text available
    Text: Preliminary M53210224DE2/DJ2 DRAM MODULE M53210224DE2/DJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224DE2/DJ2 1Mx16, M53210224D 2Mx32bits 1Mx16bits 42-pin 72-pin M53210224DE2/DJ2

    K4F151611D

    Abstract: No abstract text available
    Text: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits M53210124D 1Mx16bits 42-pin 72-pin K4F151611D

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C224BJ KMM364C224BJ with Fast Page Mode 2M x 64 DRAM DIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224BJ is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C224BJ consists of eight CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF KMM364C224BJ KMM364C224BJ 1Mx16, 2Mx64bits 1Mx16bits 42-pin 400mil 16bits

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    Abstract: No abstract text available
    Text: M53210224CE2/CJ2 DRAM MODULE M53210224CE2/CJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224CE2/CJ2 M53210224CE2/CJ2 1Mx16, M53210224C 2Mx32bits M53210224C 1Mx16bits 42-pin 72-pin

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    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V104 AT KMM332V104AT Fast Page Mode 1Mx32 DRAM DIMM Low Power, 4K Refresh, 3.3V G EN ERA L DESCRIPTION The Samsung KMM332V104AT is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V104AT consists of two CMOS 1Mx16bit DRAMs in 44-pin TSOP-II packages


    OCR Scan     		PDF KMM332V104AT 1Mx32 KMM332V104AT-L7 KMM332V104AT-L8 KMM332V104 1Mx16bit 44-pin

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BJ 1Mx16Bit 1Mx16 71bm4E 16C1000BJ 40SOJ 1000B

    C1204B

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BT 16Bit 1Mx16 C1204B

    km416c1204

    Abstract: No abstract text available
    Text: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B 1Mx16Bit 1Mx16 km416c1204

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BT 1Mx16Bit 1Mx16 band-w25 5CK44 -TSOP2-400R

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 374F 224B J1 KM M 374F 224B J1 EDO M o d e w i t h o u t b u f fe r 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224BJ1 is a 2Mx72bits Dynamic RAM consists ot eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    OCR Scan     		PDF 1Mx16 KMM374F224BJ1 2Mx72bits 1Mx16bits 400mil 300mil 168-pin 374F224BJ1

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 1Mx16 KMM5362203BW 2Mx36bits 1Mx16bits 42-pin 24-pin 72-pin

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
    Text: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 hy57v168010a hy57v168010 HY57V164010 hy57v168010altc hy57v16801 hy57v161610a MDQ13 M1023 OV9653

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V224AT KMM332V224AT Fast Page Mode 2Mx32 DRAM DIMM Low Power, 1K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM332V224AT is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V224AT consists of four CMOS 1Mx16bit DRAMs in 44-pin TSOPII packages


    OCR Scan     		PDF KMM332V224AT KMM332V224AT 2Mx32 1Mx16bit 44-pin

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 1Mx16Bit 1Mx16 002D331

    KM416C1200a

    Abstract: km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode C M O S D RAM s. Fast P age M ode o ffe rs high speed random a c c e s s o f m em o ry ce lls w ith in th e sa m e row. P o w e r su p p ly vo lta g e + 5 .0 V o r + 3 .3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16 DQ8-DQ15 D020331 KM416C1200a km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A

    D012

    Abstract: KM416C1200A IC FOR SAMSUNG MINI COMPONENT KM416C1200AJ
    Text: KM M364C224A J DRAM MODULE K M M 364C 224A J Fast Page M ode 2Mx64 DRAM DIMM, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224AJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C224AJ consists of eight CMOS 1Mx16bit DRAMs in 44-pin SOJ 400mil packages


    OCR Scan     		PDF M364C224A KMM364C224AJ 2Mx64 1Mx16bit 44-pin 400mil 48pin 168-pin D012 KM416C1200A IC FOR SAMSUNG MINI COMPONENT KM416C1200AJ