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    HY57V164010C-10

    Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
    Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of


    Original     		PDF HY57V164010C HY57V164010C 216-bits 152x4. 1SD30-11-MAR98 400mil 44pin HY57V164010C-10 hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S

    hy57v16

    Abstract: HY57V164010D-10
    Text: HY57V164010D 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    Original     		PDF HY57V164010D HY57V164010D 216-bits 152x4. 400mil 44pin hy57v16 HY57V164010D-10

    hy57v164010c

    Abstract: No abstract text available
    Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of


    Original     		PDF HY57V164010C HY57V164010C 216-bits 152x4. 400mil 44pin

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    HY57V164010B

    Abstract: HY57V164010BTC-10 HY57V164010
    Text: - H Y U H O f l l - , H Y 57V 164010B 2 B anks x 2 M x 4 B it S ynchronou s DRAM DESCRIPTION The Hyundai HY57V164010B is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V164010B is organized as 2banks of


    OCR Scan     		PDF 164010B HY57V164010B 216-bits 152x4. HY57V164Q10B 400mil 44pin 1SD30- 0-DEC97 HY57V164010BTC-10 HY57V164010

    HY57V164010

    Abstract: No abstract text available
    Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    OCR Scan     		PDF 164010D HY57V164010D 216-bits 152x4. 400mil 44pin 40-10-M HY57V164010

    hy57v168010a

    Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
    Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part


    OCR Scan     		PDF 16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
    Text: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 hy57v168010a hy57v168010 HY57V164010 hy57v168010altc hy57v16801 hy57v161610a MDQ13 M1023 OV9653

    X2M ST

    Abstract: No abstract text available
    Text: »«Y UND ft! - • H Y57V164010C 2 Banks x Z M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of


    OCR Scan     		PDF Y57V164010C HY57V164010C 216-bits 152x4. 400mil 44pin 1SD30-U-MA298 X2M ST

    HY57V161610TC

    Abstract: No abstract text available
    Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC


    OCR Scan     		PDF 16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
    Text: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010, HY57V168010, HY57V161610 512Kbit HY57V164010- HY57V168010- 1SD10-03-NOV96 285ns hy57v168010a hy57v168010 HY57V164010 400k5

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I ♦ HYM7V75AR400C N-SERIES > Registered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75AR400C is a high speed 3.3Volt Synchronous Dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in TSO PII and one 8-pin T S S O P 2K bit EEPRO M on a 168-pin glass-epoxy


    OCR Scan     		PDF HYM7V75AR400C 4Mx72 168-pin hig66MHz 50MHz HYM7V75AR40GC 111run

    HY57V168

    Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
    Text: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG


    OCR Scan     		PDF 168Pin HYM7V641OOTRG HYM7V64100BTRG HYM7V6420 8/10P/10S 8/10P/t0S HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG HY57V168 hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 pc66

    hy57v168010

    Abstract: HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT
    Text: Sync. DRAM MODULE As of '96.3Q TYPE SIZE SPEED REF. 168 Pin 8MB M X 64 Sync. HYM7V64100TR 10/12/15 4K HY57V161610 x4 DIMM 16MB 2M X64 Sync. HYM7V64200TR 10/12/15 4K HY57V161610X8 HYM7V64200TF 10/12/15 4K HY57V168010x8 DESCRIPTION. PART NO. Unbuffered 32MB


    OCR Scan     		PDF HYM7V64100TR HYM7V64200TR HYM7V64200TF HYM7V72A200TF HYM7V64400TK HYM7V64400TF HY57V161610 HY57V161610X8 HY57V168010x8 HY57V168010 HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT