HY57V164010C-10
Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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HY57V164010C
HY57V164010C
216-bits
152x4.
1SD30-11-MAR98
400mil
44pin
HY57V164010C-10
hy57v16
HY57V164010
HY57V168010
1SD30-11-MAR98
HY57V164010CLTC-10S
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hy57v16
Abstract: HY57V164010D-10
Text: HY57V164010D 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of
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HY57V164010D
HY57V164010D
216-bits
152x4.
400mil
44pin
hy57v16
HY57V164010D-10
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hy57v164010c
Abstract: No abstract text available
Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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Original
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HY57V164010C
HY57V164010C
216-bits
152x4.
400mil
44pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs
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16Mbit
HY57V164010-
HY57V168010-
HY57V161610-
1Mx16bit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
1SD10-Q3-NOV96
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HY57V164010B
Abstract: HY57V164010BTC-10 HY57V164010
Text: - H Y U H O f l l - , H Y 57V 164010B 2 B anks x 2 M x 4 B it S ynchronou s DRAM DESCRIPTION The Hyundai HY57V164010B is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V164010B is organized as 2banks of
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OCR Scan
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164010B
HY57V164010B
216-bits
152x4.
HY57V164Q10B
400mil
44pin
1SD30-
0-DEC97
HY57V164010BTC-10
HY57V164010
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HY57V164010
Abstract: No abstract text available
Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of
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OCR Scan
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164010D
HY57V164010D
216-bits
152x4.
400mil
44pin
40-10-M
HY57V164010
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hy57v168010a
Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part
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16M-bit
HY57V16401OATC
HY57V164010ALTC
HY57V16801
HY57V168010ALTC
HY57V161610ATC
HY57V161610ALTC
64M-bit
HY57V644010TC
HY57V644020TC
hy57v168010a
HY57V164010
TSOPII
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hy57v168010a
Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
Text: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs
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OCR Scan
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16Mbit
HY57V164010-
HY57V168010-
HY57V161610-
1Mx16bit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
1SD10-Q3-NOV96
hy57v168010a
hy57v168010
HY57V164010
hy57v168010altc
hy57v16801
hy57v161610a
MDQ13
M1023
OV9653
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X2M ST
Abstract: No abstract text available
Text: »«Y UND ft! - • H Y57V164010C 2 Banks x Z M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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Y57V164010C
HY57V164010C
216-bits
152x4.
400mil
44pin
1SD30-U-MA298
X2M ST
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HY57V161610TC
Abstract: No abstract text available
Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC
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16Mbit
HY57V164010TC
HY57V168010TC
HY57V161610TC
HY57V644010TC
HY57V644020TC
HY57V654010TC
HY57V654020TC
Y57V64401IT
HY57V644/125/100
HY57V161610TC
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hy57v168010a
Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
Text: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs
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16Mbit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
HY57V164010-
HY57V168010-
1SD10-03-NOV96
285ns
hy57v168010a
hy57v168010
HY57V164010
400k5
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Untitled
Abstract: No abstract text available
Text: - H Y U N D A I ♦ HYM7V75AR400C N-SERIES > Registered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75AR400C is a high speed 3.3Volt Synchronous Dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in TSO PII and one 8-pin T S S O P 2K bit EEPRO M on a 168-pin glass-epoxy
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HYM7V75AR400C
4Mx72
168-pin
hig66MHz
50MHz
HYM7V75AR40GC
111run
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HY57V168
Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
Text: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG
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168Pin
HYM7V641OOTRG
HYM7V64100BTRG
HYM7V6420
8/10P/10S
8/10P/t0S
HYM7V64200BTRG
HYM7V64200TFG
HYM7V64200BTFG
HYM7V65200CLTFG
HY57V168
hy57v168010b
hym7v64200
hy57v168010a
HYM7V64400
HYM7V64400TFG
PC100
HYM7V65400
pc66
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hy57v168010
Abstract: HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT
Text: Sync. DRAM MODULE As of '96.3Q TYPE SIZE SPEED REF. 168 Pin 8MB M X 64 Sync. HYM7V64100TR 10/12/15 4K HY57V161610 x4 DIMM 16MB 2M X64 Sync. HYM7V64200TR 10/12/15 4K HY57V161610X8 HYM7V64200TF 10/12/15 4K HY57V168010x8 DESCRIPTION. PART NO. Unbuffered 32MB
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HYM7V64100TR
HYM7V64200TR
HYM7V64200TF
HYM7V72A200TF
HYM7V64400TK
HYM7V64400TF
HY57V161610
HY57V161610X8
HY57V168010x8
HY57V168010
HY57V164010
HYM7V64100T
1M - PCMCIA linear card
1M - FLASH PCMCIA linear card
HY57V32
2M - FLASH PCMCIA linear card
HY5117400ASLT
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