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    SK Hynix Inc HY57V168010DTC-10S

    IC,SDRAM,2X1MX8,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components HY57V168010DTC-10S 2,710
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    HY57V168010DTC-10S 1
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    HY57V168010 Datasheets Context Search

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    HY57V168010C

    Abstract: HY57V168010CLTC-8 HY57V168010CLTC-10S
    Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of


    Original     		HY57V168010C HY57V168010C 216-bits 576x8. 400mil 44pin HY57V168010CLTC-8 HY57V168010CLTC-10S PDF

    HY57V168010C

    Abstract: hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31
    Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of


    Original     		HY57V168010C HY57V168010C 216-bits 576x8. 1SD31-11-MAR98 400mil 44pin hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31 PDF

    HY57V168010D

    Abstract: hy57v168010d-tc-10s HY57V168010DTC-10 HY57V168010DTC-10S hy57v168010 HY57V168
    Text: HY57V168010D 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of


    Original     		HY57V168010D HY57V168010D 216-bits 576x8. 400mil 44pin hy57v168010d-tc-10s HY57V168010DTC-10 HY57V168010DTC-10S hy57v168010 HY57V168 PDF

    HY57V168010D

    Abstract: HY57V168010
    Text: HY57V168010D 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of


    Original     		HY57V168010D HY57V168010D 216-bits 576x8. 400mil 44pin HY57V168010 PDF

    HYM7V65400

    Abstract: No abstract text available
    Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		HYM7V65400C 4Mx64 44-pin 168-pin HYM7V65400 PDF

    HY57V164010C-10

    Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
    Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of


    Original     		HY57V164010C HY57V164010C 216-bits 152x4. 1SD30-11-MAR98 400mil 44pin HY57V164010C-10 hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S PDF

    hy57v168010c

    Abstract: HYM7V65400CLTFG-10P HYM7V65400
    Text: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		HYM7V65400C 4Mx64 44-pin 168-pin hy57v168010c HYM7V65400CLTFG-10P HYM7V65400 PDF

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832 PDF

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821 PDF

    hy57v168010

    Abstract: hy57v168010D hy57v16801 hy57v168010dtc-10s
    Text: HYM7V65200D F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65200D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy


    Original     		HYM7V65200D 2Mx64 44-pin 168-pin hy57v168010 hy57v168010D hy57v16801 hy57v168010dtc-10s PDF

    hy57v168010D

    Abstract: 4MX72 BIT SDRAM hy57v168010
    Text: HYM7V75A400D F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.


    Original     		HYM7V75A400D 4Mx72 44-pin 168-pin hy57v168010D 4MX72 BIT SDRAM hy57v168010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 PDF

    hy57v168010b

    Abstract: hy57v168010 hy57v16801
    Text: -H Y U N D A I - • H Y 5 7 V 1 6 8 0 1 0 B 2 Banks x IM X 8 Bit Synchronous ORAM DESCRIPTION The Hyundai HY57V168010B is a 16,777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V168010B is organized as 2banks of


    OCR Scan     		HY57V168010B 216-bits 576x8. 400mil 44pin hy57v168010 hy57v16801 PDF

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN PDF

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
    Text: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 hy57v168010a hy57v168010 HY57V164010 hy57v168010altc hy57v16801 hy57v161610a MDQ13 M1023 OV9653 PDF

    hy57v168010

    Abstract: HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT
    Text: Sync. DRAM MODULE As of '96.3Q TYPE SIZE SPEED REF. 168 Pin 8MB M X 64 Sync. HYM7V64100TR 10/12/15 4K HY57V161610 x4 DIMM 16MB 2M X64 Sync. HYM7V64200TR 10/12/15 4K HY57V161610X8 HYM7V64200TF 10/12/15 4K HY57V168010x8 DESCRIPTION. PART NO. Unbuffered 32MB


    OCR Scan     		HYM7V64100TR HYM7V64200TR HYM7V64200TF HYM7V72A200TF HYM7V64400TK HYM7V64400TF HY57V161610 HY57V161610X8 HY57V168010x8 HY57V168010 HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT PDF

    HY57V161610TC

    Abstract: No abstract text available
    Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC


    OCR Scan     		16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC PDF

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
    Text: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010, HY57V168010, HY57V161610 512Kbit HY57V164010- HY57V168010- 1SD10-03-NOV96 285ns hy57v168010a hy57v168010 HY57V164010 400k5 PDF

    HY57V168

    Abstract: hy57v168010 1sd31 66MHz
    Text: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of


    OCR Scan     		168010C 216-bits 576x8. 57V168010C 400mil 44pin 047CK 1SD31-11-MAR98 HY57V168 hy57v168010 1sd31 66MHz PDF

    HY57V164010

    Abstract: No abstract text available
    Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    OCR Scan     		164010D HY57V164010D 216-bits 152x4. 400mil 44pin 40-10-M HY57V164010 PDF

    hy57v168010a

    Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
    Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.


    OCR Scan     		16M-bit 1Mx16-bit Y57V164010A HY57V168010A HY57V161610A 7V651610 HY57V651620 HY57V644021 HY57V654021 HY57V648021 Y57V HY57V641620 HY57V641621 PDF

    HY57V168010C

    Abstract: No abstract text available
    Text: • HYM7V75A200C F-SERIES “H Y U M D U I Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM 7V75A200C is high speed 3.3Volt C M O S Synchronous D R A M module consisting of nine 2Mx8 bit Synchronous D R A M s in 44-pin T SO P II and one 8-pin T S S O P 2K bit E E P R O M on a 168-pin glass-epoxy


    OCR Scan     		HYM7V75A200C 2Mx72 7V75A200C 44-pin 168-pin 33jtF HY57V168010C PDF

    hy57v168010a

    Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
    Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part


    OCR Scan     		16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII PDF

    HY57V168

    Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
    Text: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG


    OCR Scan     		168Pin HYM7V641OOTRG HYM7V64100BTRG HYM7V6420 8/10P/10S 8/10P/t0S HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG HY57V168 hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 pc66 PDF