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HY57V654020 Abstract: Hyundai Semiconductor dram 875mil Text: HY57V654020 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of	Original	HY57V654020 HY57V654020 864-bit 304x8. 1SE16-10-SEP97. Hyundai Semiconductor dram 875mil	PDF
hy57v168010b Abstract: ddr sdram 128Mbit 8Mx16 54-PIN Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x	OCR Scan	256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN	PDF
hy57v168010a Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801 Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part	OCR Scan	16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII	PDF
10d01 Abstract: No abstract text available Text: -«Y U H D «! > -• HY57V654020 4 Banks x 4 U x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 6 7,108,864-bit CMOS Synchronous DRAM ideally suited for the main memory appli cations which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of	OCR Scan	HY57V654020 864-bit 304x8. 10d01	PDF
Untitled Abstract: No abstract text available Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL	OCR Scan	16Mx4 HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 HY57V644010	PDF
Untitled Abstract: No abstract text available Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL	OCR Scan	HY57V644010 HY57V644020 HY57V654010 HY57V654020 HY57V644011 HY57V644021 HY57V654011 HY57V654021 16Mx4 HY57V644010/	PDF
HY57V16161 Abstract: hy57v168010b 1MX16BIT 4MX16 Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram	OCR Scan	HY57V41610TC--------------------- 256Kx16-bit, 16M-bit HY57V16401O --------HY57V168010BTC------------------- -------------------------------HY57V16161 -------------------1Mx16-bit, 64M-bit HY5DV654023TC-------------------- HY57V16161 hy57v168010b 1MX16BIT 4MX16	PDF
HY57V161610TC Abstract: No abstract text available Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC	OCR Scan	16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC	PDF