hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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OCR Scan
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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HY57V168
Abstract: hy57v168010 1sd31 66MHz
Text: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of
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OCR Scan
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168010C
216-bits
576x8.
57V168010C
400mil
44pin
047CK
1SD31-11-MAR98
HY57V168
hy57v168010
1sd31
66MHz
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HY57V164010
Abstract: No abstract text available
Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of
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OCR Scan
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164010D
HY57V164010D
216-bits
152x4.
400mil
44pin
40-10-M
HY57V164010
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HY57V164010C-10
Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of
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Original
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HY57V164010C
HY57V164010C
216-bits
152x4.
1SD30-11-MAR98
400mil
44pin
HY57V164010C-10
hy57v16
HY57V164010
HY57V168010
1SD30-11-MAR98
HY57V164010CLTC-10S
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HY57V168010C
Abstract: hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31
Text: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of
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Original
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HY57V168010C
HY57V168010C
216-bits
576x8.
1SD31-11-MAR98
400mil
44pin
hy57v168010
HY57V168010CTC-10
hy57v16801
HY57V168010CLTC-10S
1SD31-11-MAR98
hy57v168010cltc
1sd31
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KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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