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SunLED Group XZFBB53W-8ST LED BLUE CLEAR CHIP SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XZFBB53W-8ST	Digi-Reel	11,012		1	1 $0.68 10 $0.404 100 $0.68 1000 $0.19302 10000 $0.17927	Buy Now
	XZFBB53W-8ST	Cut Tape	11,012		1	1 $0.68 10 $0.404 100 $0.68 1000 $0.19302 10000 $0.17927	Buy Now
	XZFBB53W-8ST	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.15877	Buy Now
NAC	XZFBB53W-8ST				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BB535E7904HTSA1 DIODE VAR CAP 30V 20MA SOD-323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BB535E7904HTSA1	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.072	Buy Now
Mouser Electronics	BB535E7904HTSA1		3,214			1 $0.31 10 $0.196 100 $0.084 1000 $0.076 10000 $0.05	Buy Now
Newark	BB535E7904HTSA1	Cut Tape	7,262		5	1 $0.291 10 $0.191 100 $0.087 1000 $0.079 10000 $0.079	Buy Now
Rochester Electronics	BB535E7904HTSA1		6,000		1	1 $0.0493 10 $0.0493 100 $0.0463 1000 $0.0419 10000 $0.0419	Buy Now
TME	BB535E7904HTSA1		2,961		1	1 $0.302 10 $0.221 100 $0.108 1000 $0.069 10000 $0.069	Buy Now

Ameya Holding Limited	BB535E7904HTSA1		6,984			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	BB535E7904HTSA1	Cut Tape	3,720			1 - 10 - 100 $0.0475 1000 $0.0472 10000 $0.0463	Buy Now
EBV Elektronik	BB535E7904HTSA1			5 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
SunLED Group XZFBB53W-8 LED BLUE CLEAR 2SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XZFBB53W-8	Cut Tape	7,299		1	1 $0.61 10 $0.36 100 $0.61 1000 $0.16856 10000 $0.16856	Buy Now
	XZFBB53W-8	Digi-Reel	7,299		1	1 $0.61 10 $0.36 100 $0.61 1000 $0.16856 10000 $0.16856	Buy Now
	XZFBB53W-8	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.13525	Buy Now
NAC	XZFBB53W-8	Reel	25		1	1 - 10 - 100 - 1000 - 10000 $0.116	Buy Now
SunLED Group XZFBB53W-1 LED BLUE CLEAR 2SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XZFBB53W-1	Cut Tape	6,294		1	1 $0.59 10 $0.348 100 $0.59 1000 $0.16238 10000 $0.16238	Buy Now
	XZFBB53W-1	Digi-Reel	6,294		1	1 $0.59 10 $0.348 100 $0.59 1000 $0.16238 10000 $0.16238	Buy Now
	XZFBB53W-1	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.12998	Buy Now
NAC	XZFBB53W-1	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.111	Buy Now
SunLED Group XZCFBB53W-1VF LED BLUE CLEAR 0603 SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XZCFBB53W-1VF	Cut Tape	2,318		1	1 $0.7 10 $0.415 100 $0.7 1000 $0.19907 10000 $0.19907	Buy Now
	XZCFBB53W-1VF	Digi-Reel	2,318		1	1 $0.7 10 $0.415 100 $0.7 1000 $0.19907 10000 $0.19907	Buy Now
	XZCFBB53W-1VF	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.16136	Buy Now
NAC	XZCFBB53W-1VF	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now

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BB53 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF
BB531	ITT Industries	Solid State Tuner Components	Scan	PDF
BB531	ITT Semiconductors	Solid State Tuner Components	Scan	PDF
BB531	Micronas Semiconductor	Variable-Capacitance Tuner Diodes	Scan	PDF
BB531	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BB535	Infineon Technologies	Silicon variable capacitance diode for UHF and TV-TR tuners	Original	PDF
BB535	Infineon Technologies	UHF and VHF Tuner; Package: PG-SOD323-2; Configuration: Single; I_F (max): 20.0 mA; C_T1 (typ): 18.7 pF; C_T2 (typ): 15.0 pF; C_T / C _T: 6.7 (2/25V);	Original	PDF
BB535	Infineon Technologies	DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323	Original	PDF
BB535	Leshan Radio Company	Silicon Variable Capacitance Diode	Original	PDF
BB535	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BB535	Siemens	Cross Reference Guide 1998	Original	PDF
BB535	Siemens	Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance)	Original	PDF
BB535	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BB535E6700	Infineon Technologies	DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R	Original	PDF
BB535E7779	Infineon Technologies	DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R	Original	PDF

BB535E7904	Infineon Technologies	Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VAR CAP 30V 20MA SOD-323	Original	PDF
BB535E7904	Infineon Technologies	DIODE VAR CAP SINGLE 30V 17.5PF 2SOD323 T/R	Original	PDF
BB535E7904HTSA1	Infineon Technologies	Discrete Semiconductor Products - Diodes - Variable Capacitance (Varicaps, Varactors) - DIODE VAR CAP 30V 20MA SOD-323	Original	PDF
BB535E7906	Infineon Technologies	DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R	Original	PDF
BB535E7907	Infineon Technologies	DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R	Original	PDF
BB535E7908	Infineon Technologies	Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VARACTOR 30V SOD-323	Original	PDF

BB53 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: bb53T31 o o i n n DEVELOPMENT DATA 6TV160V SERIES This data sheet contains advance information and specifications ere subject to change without notice. ObE D N AMER PHILIPS/DISCRETE FAST GATE TURN-OFF THRYRISTORS Thyristors in IS O T O P envelopes with electrically isolated metal baseplates capable of being turned	OCR Scan	bb53T31 6TV160V 100QR 1200R BTV160V	PDF
PHILIPS BYX50-200 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:	OCR Scan	bb53T31 BYX50 BYX50â bbS3T31 0010S5S tt53T31 PHILIPS BYX50-200	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in	OCR Scan	bb53R31 0D3Q47S BUK436-1000B bbS3T31	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	bb53331 OT223 BUK581-60A bbS3831 D030fl35 OT223.	PDF
Untitled Abstract: No abstract text available Text: bb53^31 0031bb4 512 » A P X Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ108 b^E D N AMER PHILIPS/DISCRETE PINNING DESCRIPTION PIN The BFQ108 is a high output voltage PNP transistor in a SOT 122A envelope, primarily intended for use	OCR Scan	0031bb4 BFQ108 BFQ108 45005B)	PDF
Untitled Abstract: No abstract text available Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability	OCR Scan	bb53T31 BFQ67W OT323 UBC870 OT323. OT323	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b'JE D bb53R31 OQSbSlfi DOT APX B Y /U t BY706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, the diodes should be	OCR Scan	bb53R31 BY706 BY705 002fci52Q	PDF
Untitled Abstract: No abstract text available Text: bb53R31 0 0 3 1 5 2 6 3T0 • APX Philips Semiconductors Product specification PNP 5 GHz wideband transistor — — — — — -— DESCRIPTION BFQ24 ■ N AUER PHILIPS/DISCRETE bRE » PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes	OCR Scan	bb53R31 BFQ24 BFQ22S. MEA371 MEA365 MEA372	PDF
Untitled Abstract: No abstract text available Text: APX bb53T31 □□23737 b37 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors BSN304; BSN304A N AUER PH IL IPS /DISCR ETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL • High-speed switching	OCR Scan	bb53T31 BSN304; BSN304A Lb53131 bbS3T31 QD237T3	PDF
Untitled Abstract: No abstract text available Text: bb53R31 0 0 3 2 3 5 3 bfll M AP X Philips Sem iconductors Product specification CATV amplifier module BGY67 N APER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation	OCR Scan	bb53R31 BGY67 PINNING-SOT115C DIN45004B;	PDF
Untitled Abstract: No abstract text available Text: AflER PHILIPS/DISCRETE Philips Semiconductors bRE T> m bb53R31 002A33R flS7 « A P X Product Specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope	OCR Scan	bb53R31 002A33R BU2508A 00EB343	PDF
Untitled Abstract: No abstract text available Text: b'lE D N AMER PHILIPS/DISCRETE • bb53131 D0277D2 m i BF494 ■ APX V _ J SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope intended fo r HF applications in radio and television receivers; it is especially recommended fo r FM tuners, low noise AM mixer-oscillators with high source	OCR Scan	bb53131 D0277D2 BF494 BF494B	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b^E D • bb53T31 0D2BEB7 b23 I IAPX L BU705F BU705DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn power transistors in a SOT199 envelope intended fo r use in horizontal deflection circuits o f television receivers. The BU705DF has an integrated efficiency diode.	OCR Scan	bb53T31 BU705F BU705DF OT199 BU705DF BU705DF) 7Z62340	PDF
BTY79-400R Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bb53^31 00S73A3 T77 H A P X B IY79 StHIhS b'lE » THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits e.g. light and motor control and power switching systems. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to	OCR Scan	00S73A3 BTY79-400R 1000R. BTY79-400R 1000R DD273aT bb53T31 BTY79	PDF

Untitled Abstract: No abstract text available Text: bTE bb53^31 0 0 2 7 W 143 « A P X D JC327 JC327A JC328 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The JC327, JC327A, JC328 are complementary to the JC337, JC337A and JC338 respectively.	OCR Scan	JC327 JC327A JC328 JC327, JC327A, JC328 JC337, JC337A JC338	PDF
Untitled Abstract: No abstract text available Text: I N AflER PHILIPS/DISCRETE I bb53R31 DDSflS3fl T3T blE D B U 505 BU505D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn power transistor in a TO-220 envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The BU505D has an integrated efficiency	OCR Scan	bb53R31 BU505D O-220 BU505D BU505D) bbS3T31 0D26243	PDF
sd 431 transistor Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in	OCR Scan	bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor	PDF
BYD14 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bb53T31 002bS52 27fl • APX BYD14 SERIES b^E D L M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended fo r general purpose rectifier applications.	OCR Scan	bb53T31 002bS52 BYD14 BYD14D	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation	OCR Scan	bb53T31 3Db40 BUK455-60A/B BUK455 -TO220AB	PDF
Untitled Abstract: No abstract text available Text: bb53c!31 0015^62 b BCX51 BCX52 BCX53 QbE D N AMER PHILIPS/DISCRETE 7V r- 2^-23 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages	OCR Scan	bb53c BCX51 BCX52 BCX53 BCX54, BCX55 BCX56	PDF
Untitled Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE b3E bb53331 DD273SD 6^3 * A P X D BT152 SERIES y v THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications	OCR Scan	bb53331 DD273SD BT152 220AB BT152-400R 002732b 10I-2	PDF
Untitled Abstract: No abstract text available Text: bb53T31 ODEMb^b bTb H A P X Philips Semiconductors N AUER PHILIPS/DISCRETE b7E D Product specification NPN 7 GHz wideband transistor FEATURES • BF752 PINNING PIN High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION	OCR Scan	bb53T31 BF752 BF752 OT143 MSB014 OT143.	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bRE T> bb53R31 DD2bR44 &E5 HAPX Philips Semiconductors Product specification Silicon planar epitaxial BAL74W high-speed diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High switching speed Vr MAX. UNIT continuous reverse	OCR Scan	bb53R31 DD2bR44 BAL74W	PDF
Untitled Abstract: No abstract text available Text: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.	OCR Scan	bb53T31 BSS192 A/-10 bb53t MC073B	PDF

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SunLED Group XZFBB53W-8ST

Infineon Technologies AG BB535E7904HTSA1

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BB53 Datasheets (24)

BB53 Datasheets Context Search

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PHILIPS BYX50-200

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BTY79-400R

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sd 431 transistor

BYD14

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