Marking G1s
Abstract: No abstract text available
Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF
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bbS3131
BF992R
OT143R
Marking G1s
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MPSA26
Abstract: No abstract text available
Text: bTE T> m MPSA25 MPSA26 MPSA27 bbS3131 0D2B01S b?0 • APX N AUER PHILIPS/DISCRETE A NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77. Q UICK REFERENCE D A T A
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MPSA25
MPSA26
MPSA27
bbS3131
0D2B01S
MPSA75,
MPSA76,
MPSA77.
MPSA26
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Untitled
Abstract: No abstract text available
Text: *' N AflER PHILIPS/DISCRETE ^ I f ' * bbS3131 DQ2E3S7 a • BYH2U SERIES ESE D ■ P O S -/7 J V. ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse
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bbS3131
M3335
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dk 2482 h transistor
Abstract: NPN N43 dk 2482 transistor BFG540 N43 n37 transistor Code N43 transistor N43 557 sot143 BFG540 BF 199 transistor
Text: e • ^ _ Philips S em iconductors ^ N • bbS3131 AMER 0025011 PHILIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES 253 £ Product specification b7E BFG540; BFG540/X; BFG540/XR PINNING • High power gain • Low noise figure • High transition frequency
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BFG540;
BFG540/X;
BFG540/XR
OT143
OT143R
BFG540
dk 2482 h transistor
NPN N43
dk 2482 transistor
BFG540 N43
n37 transistor
Code N43
transistor N43
557 sot143
BFG540
BF 199 transistor
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modulator circuit
Abstract: BY438 Philips diode tFR
Text: N AMER PHILIPS/ DISCR ETE bRE » • bbS3131 D0Eb471 2HT ■ APX BY438 A PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The
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bbS3131
D0Eb471
BY438
OD-64.
BY438.
modulator circuit
BY438
Philips diode tFR
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SCR 1989
Abstract: No abstract text available
Text: N AUER PH IL IPS /DISCR ETE bbS3131 D02042S 0 2SE D PowerMOS transistor BUK446-1000A BUK446-1000B T -31-d7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3131
D02042S
BUK446-1000A
BUK446-1000B
-31-d7
BUK446
-1000A
-1000B
SCR 1989
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btw40
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3131 D 0 i n 3 7 ObE D 4 BTW40 SERIES r ~ a s -~ /7 THYRISTORS Also available to BS9341-F083 Glass-passivated silicon thyristors in metal envelopes, intended for use in power control applications in general, and lighting control in a.c. controller circuit up to 2,5 kW in particular. A feature of the
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bbS3131
BTW40
BS9341-F083
BTW40-400R
Lb53131
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Untitled
Abstract: No abstract text available
Text: blE J> m bbS3131 Q02blSb 51T • APX BA316 BA317 N AMER PHILIPS/DISCRETE BA318 V y 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li
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bbS3131
Q02blSb
BA316
BA317
BA318
DO-35
BA316,
BA317
BA318.
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BUK446
Abstract: BUK446-1000A transistor k446 BUK446-1000B k446 diode t25 4 L0
Text: N AMER PHILIPS/DISCRETE 2 SE D • bbS3131 Q02042S M PowerMOS transistor BUK446-1000A BUK446-1000B T - 3 7 - 0 ? GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3131
Q02042S
BUK446-1000A
BUK446-1000B
T-37-Ã
BUK446
-1000A
-1000B
transistor k446
k446
diode t25 4 L0
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TRIAC BT134W-500
Abstract: bt134 phase control Triac bt134 500e BT134 BT134W BT134W-500 W500E 600ebt134 BT134W-500E/600E
Text: bbS3131 DDESb7S flbT IAPX Philips Semiconductors Product spécification Triac BT134W series N AUER PHILIPS/DISCRETE b?E D« GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in SOT223 envelopes suitable for surface mounting. They are intended for
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bbS3131
BT134W
OT223
BT134W-
OT223
AbsoBT134W
TRIAC BT134W-500
bt134 phase control
Triac bt134 500e
BT134
BT134W-500
W500E
600ebt134
BT134W-500E/600E
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BLY94
Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
Text: b'ìE » N AMER PHILIPS/DISCRETE • bbS3131 ÜÜSTTSfl 22T IAPX B LY94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 28 V . The transistor is resistance stabilized. Every tran
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bbS3131
BLY94
OT-55.
Tmb-25
BLY94
vhf power transistor 50W
philips Trimmer 60 pf
transistor TT 2222
BLY94 application notes
BLY94 a
class D 50w
50w rf power transistor
sot55
SOT-55
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BY614
Abstract: No abstract text available
Text: b^E » N AMER PHI LIPS/DISCRETE m bbS3131 OOSbSQl ÔOb BY614 I IAPX M IN IATUR E H IG H -VO LTAG E S O F T -R E C O V E R Y RECTIFIER DIODE Glass-passivated re c tifie r diode in a m inia tu re h e rm e tica lly sealed axial-leaded glass envelope. It is intended as a general purpose re c tifie r fo r high frequencies and high voltages and o w ing to its small size
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bbS3131
BY614
002b5Q3
7Z72471
BY614
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LD25C
Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
Text: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3131
30bRQ
BUK456-800A/B
T0220AB
BUK456
-800A
-800B
LD25C
BUK456-800A
BUK456-800B
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BTB 134
Abstract: BF752 MRD 532 transistor code r8
Text: • Philips Sem iconductors — — bbS3131 □DS4b cib bTb BiAPX . N AMER PHI LIPS/DISCRETE P m /w t b?E NPN 7 GHz wideband transistor FEATURES ^ BF752 PINNING • High power gain • Low noise figure • Gold metallization ensures excellent reliability.
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bbS3131
BF752
BF752
OT143
MSB014
OT143.
BTB 134
MRD 532
transistor code r8
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Untitled
Abstract: No abstract text available
Text: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78
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bbS3131
0027bl7
BCX79
BCX58
BCX59.
BCX78
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Untitled
Abstract: No abstract text available
Text: • bbS3131 □0236'ia 343 H A P X Philips Sem iconductors Data sheet status Product specification date of issue July 1993 0 g 3 3 4 N AMER PHILIPS/DISCRETE P-channel enhancement mode vertical D-MOS FET PINNING - SOT23 D ESCRIPTIO N Silicon p-channel enhancement
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bbS3131
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by617
Abstract: eht rectifier monitor EHT diode Cathode indicated by blue band eht of monitor ee4 diode
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3131 D02bSD4 5 IS * A P X Philips Sem iconductors Product specification EHT avalanche very fast *. . soft-recovery diodes FEATURES • • • Soft-recovery non snap-off characteristics Capable of absorbing avalanche
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bbS3131
D02bSD4
D02b507
BY617
by617
eht rectifier
monitor EHT
diode Cathode indicated by blue band
eht of monitor
ee4 diode
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BY709
Abstract: by707 BY708
Text: bTE D • bbS3131 002b5El bT4 ■ APX A BY707 BY708 BY709 _ SILICON E.H.T. SO FT -R EC O V ER Y RECTIFIER DIODES* E .H .T . rectifier diodes in glass envelopes intended for use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.
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bbS3131
002b5El
BY707
ABY708
BY709
BY707
BY708
BY709
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OM323
Abstract: SF 829 B sf 829 d heatsink catalogue DIN45004 OM323A OM323A philips IEC134 aluminium plane heatsink SF 827 d
Text: N AMER P H ILIP S /D IS C R ETE SSE D • bbS3131 1 OM323A T'IH-û'î'OX HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in the hybrid technique, designed for use in M A T V systems, and as general purpose amplifier for v.h.f. and u.h.f. applications requiring a high output level.
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OM323A
OM323A
OM323
DIN45004,
OM323:
7Z75321
OM323A:
OM323A.
SF 829 B
sf 829 d
heatsink catalogue
DIN45004
OM323A philips
IEC134
aluminium plane heatsink
SF 827 d
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k446
Abstract: BUK446-1000B
Text: N AMER P H IL IP S /D IS C R E T E b'ìE D • bbS3131 DD3DSÛS rnm ps semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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0D305Ã
K446-1000B
OT186
BUK446-1000B
k446
BUK446-1000B
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OF432
Abstract: No abstract text available
Text: I N AMER PHILIPS/DISCRETE TDD D bbS3131 QD1014D 0 X MAINTENANCE TYPES 90D 10140 D BY224 SERIES t-a s -o f SILIC O N BRIDGE RECTIFIERS Ready-for-use mains full-wave bridges, each consisting of four double-diffused silicon diodes, in a plastic encapsulation. The bridges are intended for use in equipment supplied from mains with r.m.s.
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bbS3131
QD1014D
BY224
BY224-400
bb53T31
DQ1D147
7Z74196
OF432
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b'lE D • bbS3131 DOEblUS 4Q4 « A P X BA223 SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA VR max.
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bbS3131
BA223
BA223
DO-34
OD-68)
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Untitled
Abstract: No abstract text available
Text: • bbS3131 0024537 1A7 H A P X N AUER PHILIPS/DISCRETE b?E T> BCV27 BCV47 ;v SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SOT23 envelope. P-N-P complement is BCV26/46. QUICK REFERENCE DATA BCV27 BCV47 Collector-emitter voltage open base
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bbS3131
BCV27
BCV47
BCV26/46.
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D'ISCRETE 25E D • bbS3131 GQlfi425 i ■ J OM339 t 7 y -0 7 -0 1 - HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in the hybrid integrated circuit technique, designed fo r use in mast head booster-amplifiers, as amplifier in MATV systems, and as general-purpose amplifier fo r v.h.f. and
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bbS3131
GQlfi425
OM339
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