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    BC 160 TRANSISTOR Search Results

    BC 160 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 160 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ic 817

    Abstract: C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN
    Text: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration


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    Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 ic 817 C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN PDF

    C 337-40

    Abstract: c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337
    Text: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328


    Original
    Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 Collector-ba20 C 337-40 c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337 PDF

    bc140

    Abstract: bc 141 general purpose complementary transistors Bc 140 transistor transistor bc icbo nA npn
    Text: BC 140 BC 141 SILICON PLANAR NPN GENERAL PURPOSE TRANSISTORS The BC140 and BC 141 are silico n planar epitaxial NPN transistors in TO -39 metal case. They are pa rticularly designed fo r audio am plifiers and sw itching applications up to 1 A. The com plem entary PNP types are the BC 160 and BC 161.


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    BC140 bc 141 general purpose complementary transistors Bc 140 transistor transistor bc icbo nA npn PDF

    TRANSISTOR BC 157

    Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
    Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


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    23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor PDF

    bc 141

    Abstract: BC160
    Text: BC 160 BC 161 SI LI CON PLANAR NPN GENERAL PURPOSE TRANSISTORS The BC160 and BC 161 are silico n planar epitaxial PNP transistors in TO -39 metal case. They are p a rticularly designed fo r audio am p lifie rs and sw itching applications up to 1 A. The com plem entary NPN types are the BC 140 and EIC141.


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    BC160 bc 141 PDF

    bc140

    Abstract: transistor Bc 141 bc 141
    Text: BC 140 BC 141 S I L I C O N PLANAR NPN GENERAL PURPOSE TRANSISTORS The I3C140 and B C 1 4 I are silicon planar epitaxial NPN transistors in TO -39 metal case. They are pa rticu la rly designed for audio am plifiers and sw itching applications up to 1 A. The com plem entary PNP types are the BC 160 and BC 161.


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    I3C140 BC14I bc140 transistor Bc 141 bc 141 PDF

    transistor BC 157

    Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
    Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


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    BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10 PDF

    BC 160

    Abstract: transistor bc icbo nA npn BC141 BC161 BC Transistors
    Text: BC 160 BC 161 SILICON PLANAR NPN GENERAL PURPOSE TRANSISTORS T he BC 160 and B C 161 a re s ilic o n p la n a r e p ita x ia l PNP tra n s is to rs in T O -3 9 m étal case. T h e y are p a rtic u la rly d e s ig n e d fo r a u d io a m p lifie rs a nd s w itc h in g a p p lic a tio n s


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    BC161 BC141. BC 160 transistor bc icbo nA npn BC141 BC Transistors PDF

    BC160

    Abstract: bc 160 BC161 TFK BC TFK 175 TFK 236 bc 141
    Text: ip ^ B C 160- BC 161 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W • Power dissipation 3.2 W


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    BC160 MOTOROLA

    Abstract: No abstract text available
    Text: MO TG R C L A SC XSTRS/R F 15E D I fc>3fc.72S4 Gaat.Mt.2 2 I BC160, -6, -10, -16 BC161, -6, -10, -16 M A X IM U M RATINGS Sym bol BC 160 BC 161 U nit Collector-Emitter Voltage VC EO 40 60 Vdc C ollector-Base Voltage VCBO 40 60 Vdc Em itter-Base Voltage VEBO


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    BC160, BC161, AdeC160, BC161 BC160 MOTOROLA PDF

    bcl6

    Abstract: No abstract text available
    Text: M AXIM U M RATINGS Rating Symbol BC BC 160-16 161-16 Unit C o lle cto r-E m itte r V o lta g e v CEO -4 0 -6 0 C o lle ctor-8 a 6 6 V o lta g e v CBO -4 0 -6 0 E m itte r-B a se V olta g e v EBO -5 .0 C o lle c to r C urre n t — C o n tin u o u s 'C - 1 .0


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    BC160, bcl6 PDF

    BC 546 BP

    Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


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    CB-76 BC317P. BC 546 BP bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740 PDF

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor PDF

    transistors BC 487

    Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


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    CB-76 BC317P. transistors BC 487 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725 PDF

    BC113

    Abstract: audio NPN bc 657 BC 114
    Text: CONSUMER TRANSISTORS continued > Li. a. < _§ X CD E u > CD O """a) o ’ o o n o @ a. >• UJ ll.c PACKAGE POLARITY DESCRIPTION (A )03 3A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5 0.85 BC 393


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    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B PDF

    C 547 B pin configuration

    Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
    Text: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max


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    CB-76 BC317P. C 547 B pin configuration transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B PDF

    transistors BC 23

    Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
    Text: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N


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    P3000 BSS64 BSS79 BSS81 BSS63 transistors BC 23 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55 PDF

    BF 414

    Abstract: to92d bc 640 ce bc 630
    Text: Transistoren Transistors GaAs MMICs Breitbandverstärker Type GaAs MMICs Broadband Amplifiers Maximum Ratings Characteristics {TA = 25 °C lap mA G dB 2 160 2 160 Vs V Ptot • CGY 21 6.0 ■ CGY 31 6.0 W F ' dB 21.0 1.5 3.9 19 100 . 900 TO-12 48 18.0 2.0


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    O-92d BE35b05 000370b BF 414 to92d bc 640 ce bc 630 PDF

    BC154

    Abstract: BC153 transistor BC 153 BC 154 transistors BC 225 bc audio transistors IT 153 bc 153 bc154-1 18x10-4
    Text: BC 153 BC 154 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BC 153 and BC 154 are silicon planar epitaxial PNP transistors in TO-18 epoxy package. They are specifically designed for use in low-noise audio preamplifiers. ABSOLUTE MAXIMUM RATINGS VcBO VcEO


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    P040-A 8x10-4 9x10-4 BC154 BC153 transistor BC 153 BC 154 transistors BC 225 bc audio transistors IT 153 bc 153 bc154-1 18x10-4 PDF

    BTO18

    Abstract: sc 107 b BC190B BC190 BC140 BC 241 bo 139 BC107 2N3708 2N3707
    Text: Silicon NPN transistors, general purpose continued Tamb = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76 Page


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    BC140 BTO18 sc 107 b BC190B BC190 BC 241 bo 139 BC107 2N3708 2N3707 PDF

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


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    O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135 PDF

    BU 808 DX

    Abstract: ei50 bu 808 df 3AR 3ER 3FR BB 4130 BC860 BCV26 T3 BCV26 BCV46 BCW29
    Text: /T T SGS-THOMSON SURFACE MOUNT DEVICES Ä 7# U D M iyiC TM Ö tgS GENERAL PURPOSE & INDUSTRIAL PNP GENERAL PURPOSE TRANSISTORS Vc e O 'c ptot hFE 'C LU VcBO O > Type / Iß max VCES* BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 BC 856 A BC 856 B


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    BSS63 SOA55 SOA56 BCV26 BCV46 BU 808 DX ei50 bu 808 df 3AR 3ER 3FR BB 4130 BC860 BCV26 T3 BCW29 PDF

    transistors BC 23

    Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494
    Text: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495


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    r-31-0' BF494 BF494A BF494B BF495C BF495D transistors BC 23 transistors BC 557b BHARAT elek 547B 548B 549B BC547A PDF