BC309 Search Results

T BC309

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307

BC307

Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9

bc307

Abstract: BC308 BC307 complementary
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

BC309

Abstract: transistor bc309
Contextual Info: SEMICONDUCTOR BC309 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 B BC309 2. Marking 4 Item Marking Description Device Name BC309 BC309 Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week KEC K KEC CORP.

2SA1286H

Abstract: 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC586 BC586 BCF29 BCF29 BCF29R BCF29R BC179A 2SA643 2SA723 2SA723 ~~~~~;j 15 20 25 30 35 40 BC253 BC263 BC159 BC159A BC159A BC419 NA22FH BC200-02 j~~g~~~ MT0412 MMT71 BC309VI BC200G BC259A BC259B BC259 NA12FI

BC307

Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).

BC307

Abstract: BC308 BC308 PNP transistor BC309 309 IC
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

CBC307B

Abstract: C307B C307 307c BC307 BC307B T BC309
Contextual Info: BC307,B,C BC308C BC309,B MAXIMUM RATINGS Symbol BC307 BC308C BC309 C o lle c to r -E m itte r V o lta g e VCEO -4 5 -2 5 -2 5 Vdc C o lle c to r-B a s e V o lta g e VCBO -5 0 -3 0 -3 0 V dc Rating CASE 29-04, STYLE 17 TO-92 TO-226AA vebo -5 .0 V dc C o lle c to r C u rre n t — C o n tin u o u s

BC307

Abstract: BC238 datasheet BC239 BC309 transistor bc237
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

bc307bta

Abstract: BC307
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

BC308A

Abstract: Transistor BC 308C BC307 Bc308
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

BC307

Abstract: transistor 309 BC309 308 transistor BC30S bc308 transistor BC309
Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol C ollector-Em itter V oltage :B C 3 0 7 ' :B C 3 0 8 /3 0 9 C ollector-Em itter Voltage

fr 309

Abstract: BC307 309 T BC239 BC309
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307

BC182 BC547

Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328

309B

Abstract: BC306C C308C bc307b
Contextual Info: BC307,B,C BC308C BC309B MAXIMUM RATINGS Sym bol BC307 BC308C BC309 Unit C o llecto r-Em itter Voltage VCEO -4 5 -25 -2 5 Vdc C o llecto r-Base Voltage VCBO -5 0 -30 -3 0 E m itter-B ase Vo ltage v ebo Rating Vdc - 5 .0 Vdc CASE 29-04, STYLE 17 TO-92 TO-226AA

BC307D

Abstract: BC307 BC309B 308C BC308C BC309 BC309 Motorola
Contextual Info: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307,B,C PNP Silicon BC308C BC309B COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 307 BC 308C BC 309 Unit Collector – Emitter Voltage VCEO –45 –25

BC253

Abstract: BC251 BC252 BC 251 BC256 transistor bc 102 BC309 BC307 BC308
Contextual Info: BC251 . . BC307 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC256 is available in groups A and B only. BC253 and BC309 are low noise types.

BC336

Abstract: bc451 BC318 BC382L BC335 BC269 BC317
Contextual Info: Low Level and General Purpose Amplifiers MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE BC267 BC268 BC269 BC280 BC282 N N N N N BC283 BC307 BC308 BC309 BC315 Ic mA Veto (V) TO-18 TO-18 TO-18 TO-18 TO-18 400 400 400 360 400 1000 1000 1000 100 600 45 20 30 40 30

SS9014

Abstract: MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A
Contextual Info: Small Signal Low Noise Transistors Part No. and Polarity NPN NF Max. hFE Condition Frequency V CEO MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 3.0 3.0 2.0 2.0 1.5 3.0 2.0 10.0 10.0 10.0 4.0 3.0 2.0 10.0 10.0 Audio Audio Audio Audio

BC307

Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).

BC307

Abstract: BC308
Contextual Info: SEMICONDUCTOR BC307/8/9 T E C H N I C A L DATA E PITA X IA L PLANAR PNP TRA N SIST O R G E N E R A L PU R PO SE A PPLICATION. LOW N O ISE A M PL IFIE R APPLICATIO N. FEA TU RES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)

Contextual Info: BC309C Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40