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    BC 162 TRANSISTOR Search Results

    BC 162 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 162 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    egs SOT23

    Abstract: BC817K-40 thermal resistance
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		PDF BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* egs SOT23 BC817K-40 thermal resistance

    transistor 6cs

    Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		PDF BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W OT323 transistor 6cs 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16

    1B marking transistor marking 6Bs

    Abstract: BC817W SOT23 6fs sot23 105BC transistor 6bs marking 6bs
    Text: BC817./BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC817. /BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* 1B marking transistor marking 6Bs BC817W SOT23 6fs sot23 105BC transistor 6bs marking 6bs

    transistor 6cs

    Abstract: 6CS transistor BC817 BC818K-40 ic 817 1B marking transistor marking 6Bs MARKING 6Cs SOT23 6bs transistor BC817 INFINEON BC808
    Text: BC817./BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC817. /BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W OT323 transistor 6cs 6CS transistor BC817 BC818K-40 ic 817 1B marking transistor marking 6Bs MARKING 6Cs SOT23 6bs transistor BC817 INFINEON BC808

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF 25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    2N4036 g1

    Abstract: BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF BC548B BC548C BC549B BC549C BC108A BC108B BC108C BC109B BC109C ZTX300 2N4036 g1 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88

    bc558c

    Abstract: transistors BC 557C philips BC557B bc557b BC557C BC558 driver BC558B PHILIPS BC556-BC558 BC556A BC557A
    Text: BC556 to 558 PHILIPS international SbE D • 7110fl2b QOMSOab 452 ■ P H I N T-Zl'Z-l SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFEREN C E DATA


    OCR Scan     		PDF BC556 711002b BC557 BC558 BC557C BC558C^ BC557AV bc558c transistors BC 557C philips BC557B bc557b BC558 driver BC558B PHILIPS BC556-BC558 BC556A BC557A

    transistor BA RW

    Abstract: No abstract text available
    Text: Product specification Philips S em iconductors BC817W; BC818W NPN general purpose transistor PIN CONFIGURATION FEATURES • H igh c u rre n t • S - m in i p a c k a g e . R> R 1 DESCRIPTION °“C N P N tra n s is to r in a p la s tic S O T 3 2 3 package.


    OCR Scan     		PDF BC817W; BC818W MBC67 OT323 17-40W transistor BA RW

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177

    transistor BC 245

    Abstract: transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor
    Text: Summary of Types SIEMENS ICs for Satellite Receivers Page Type Function TDA 6130-5X4 2-GHz Mixer 22 TDA 6140-5X TV SAT IF-FM-Demodulator 30 TDA 6142-5X FM-Demodulator for SAT TV with Switchable Input 38 TDA 6151 -5;5X Satellite-Video IC 48 TDA 6160-2S Multistandard Sound IF


    OCR Scan     		PDF 6130-5X4 6140-5X 6142-5X 6160-2S 6160-2X 6170X 6180X BCX51 transistor BC 245 transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor

    c557b

    Abstract: transistor c557b C556A c557b p h BC551 transistor BC 557B 553c BC556A BC558 driver transistor IC 557B
    Text: N AMER PHILIPS/DISCRETE bTE D m ^53^31 DD27S75 7bB H A P X BC556 to 558 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable fo r use in d rive r stages o f audio a m plifiers. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF GD27S75 BC556 BC557 BC558 7Z85708 7Z85710 c557b transistor c557b C556A c557b p h BC551 transistor BC 557B 553c BC556A BC558 driver transistor IC 557B

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


    OCR Scan     		PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    C495 transistor

    Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


    OCR Scan     		PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor

    N2907

    Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		PDF BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 N2907 ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BCY56

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91

    transistor M 9741

    Abstract: G40pC TA 2025 B 2SC3065 0GS71b S74B
    Text: S AN Y O SEMICONDUCTOR CORP 3SE D TW QTb DDGflflm ^ , 1 a T -2 ?'2 7 N P N Epitaxial Planar S ilico n C o m p o site Transistor 2029A Differential Amp Applications S74B Applications . Differential amp, current mirror. Features . Excellent in thermal equilibrium


    OCR Scan     		PDF T-29-27 T-91-20 SC-43 transistor M 9741 G40pC TA 2025 B 2SC3065 0GS71b S74B

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: r z Ä 7 7 S C S - T H O M N T L O 8 I # [ * [ f 3 » [ i O T ( ö * S T L 0 8 1 A - T L 0 8 1 B S O J-FET INPUT SINGLE OP-AMPs • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION


    OCR Scan     		PDF LCC20 TL081, TL081A TL081C TL081-TL081A-TL081B Gain-of-10 E88TL081-03 E88TL081

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p