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    BC237 COMPLEMENTARY Search Results

    BC237 COMPLEMENTARY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ML4875CS-T Rochester Electronics LLC Switching Regulator, Voltage-mode, 1.5A, BICMOS, PDSO8, SOIC-8 Visit Rochester Electronics LLC Buy
    ML4875CS-3 Rochester Electronics LLC Switching Regulator, Voltage-mode, 1.5A, BICMOS, PDSO8, SOIC-8 Visit Rochester Electronics LLC Buy
    CA3160T Rochester Electronics LLC Operational Amplifier, 1 Func, 15000uV Offset-Max, BICMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy
    CA3160AE Rochester Electronics Operational Amplifier, 1 Func, 5000uV Offset-Max, BICMOS, PDIP8, PACKAGE-8 Visit Rochester Electronics Buy
    MM74C74M Rochester Electronics LLC 74C74 - D Flip-Flop, CMOS Series, 2-Func, Positive Edge Triggered, 1-Bit, Complementary Output, CMOS, PDSO14 Visit Rochester Electronics LLC Buy

    BC237 COMPLEMENTARY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc237

    Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A
    Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K


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    PDF BC237/8/9 BC239 BC307/308/309. BC237 BC238 BC237 BC23age BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A

    BC237

    Abstract: BC237 complementary bc238 bc239 BC307
    Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC237 VCEO=45V. ・Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).


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    PDF BC237/8/9 BC239 BC307/308/309. BC237 BC238 BC237 complementary BC307

    transistor bc237 bc337

    Abstract: BC238 NPN transistor download datasheet BC238 BC238 datasheet BC237 transistor bc237 transistor bc238 BC239 BC239 NPN transistor download datasheet bc238 equivalent
    Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC237 VCEO=45V. ᴌLow Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).


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    PDF BC237/8/9 BC237 BC239 BC307/308/309. BC237 BC238 BC239 transistor bc237 bc337 BC238 NPN transistor download datasheet BC238 BC238 datasheet transistor bc237 transistor bc238 BC239 NPN transistor download datasheet bc238 equivalent

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


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    PDF BC307/8/9 BC307 BC309 BC237/238/239. BC307 BC308 BC309 BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 bc3078 BC237

    bc307

    Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N


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    PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary

    bc307

    Abstract: BC308 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


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    PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 complementary

    bc322

    Abstract: No abstract text available
    Text: , One. BC177,8,9 BC257,8,9 .BC307,8,9 BC320,1,2 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,


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    PDF BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC167, BC307, BC237, bc322

    BC237

    Abstract: BC108 characteristic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors PNP Silicon 14 13 12 11 10 9 8 6 7 MPQ7091 MPQ7093* COMPLEMENTARY *Motorola Preferred Device 1 2 3 4 5 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7091 MPQ7093 Unit Collector – Emitter Voltage


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    PDF MPQ7091 MPQ7093* MPQ7091 MPQ7093 CHARA218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BC237 BC108 characteristic

    MPQ7051

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon 14 13 12 11 10 9 8 6 7 COMPLEMENTARY 1 2 3 4 5 MPQ7051 Voltage and current are negative for PNP transistors TYPE B Motorola Preferred Device MAXIMUM RATINGS Rating Symbol


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    PDF MPQ7051 Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPQ7051 BC237

    BC237

    Abstract: S 178 A INTEGRATED CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPQ7041 MPQ7042 MPQ7043* Quad Amplifier Transistors NPN Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 5 *Motorola Preferred Device 6 7 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7041 MPQ7042 MPQ7043 Unit Collector – Emitter Voltage


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    PDF MPQ7041 MPQ7042 MPQ7043* MPQ7043 MSC1621T1 MSC2404 MSD1819A MV1620 BC237 S 178 A INTEGRATED CIRCUIT

    BC237

    Abstract: BC238 bc2378 transistor bc237 bc337 BC239 transistor bc238 bc237 transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V Ce =6V, Ic=0.1mA, f=lkHz).


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    PDF BC237/8/9 BC237 BC239 BC307/308/309. BC238 BC239 BC238 bc2378 transistor bc237 bc337 transistor bc238 bc237 transistor

    transistor bc237

    Abstract: bc238 BC237
    Text: SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 VCECJ=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (Vce=6V, Ic=0. 1mA, f=lkHz). • For Complementary With PNP type BC307/308/309.


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    PDF BC237 BC239 BC307/308/309. BC237/8/9 BC238 BC237 transistor bc237

    BC237

    Abstract: BC238 BC239 NPN transistor BC239 transistor bc237 transistor BC238 transistor bc237 bc337 Transistor bc239 BC238-5 bc2378
    Text: SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V Ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V ce=6V, Ic=0.1mA, f=lkHz). • For Complementary With PNP type BC307/308/309.


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    PDF BC237/8/9 BC237 BC239 BC307/308/309. BC238 BC239 BC238 BC239 NPN transistor transistor bc237 transistor BC238 transistor bc237 bc337 Transistor bc239 BC238-5 bc2378

    BC238 h parameter

    Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
    Text: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


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    PDF BC107 BC167 BC237 BC317 BC107, BC177, BC167, BC257, BC237, BC307, BC238 h parameter bc313 BC231 bc101 BC168 BC320 30Hz-15kHz

    BC519

    Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
    Text: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


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    PDF BC107, BC177, BC167, BC257, BC237, BC307, BC317, BC320, bc107 T0-92B BC519 fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC237 complementary BC238

    bc237 siemens

    Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
    Text: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC


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    PDF flS35bQS G041540 Q62702-C697 Q62702-C276 Q62702-C277 Q62702-C698 Q62702-C278 Q62702-C279 Q62702-C280 Q62702-C699 bc237 siemens BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239

    bc1078

    Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
    Text: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


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    PDF BC107 BC167 BC237 BC317 BC107, BC167, BC257, BC237, BC307, BC317, bc1078 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A

    BC177

    Abstract: BC257 BC520 bc1778 bc258 BC317 BC321 BC320 bc3078 BC107
    Text: BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 KmmoGtgfimoMNHwoMMwmNwmNmomMMwmmmoooHMígetMemmm^^ THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9.


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    PDF BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC307, BC237, BC320, BC520 bc1778 bc258 BC317 BC321 bc3078 BC107

    BC257

    Abstract: BC307 BC107 BC307 micro electronics bci77 BC177 BC178 BC179 BC237 BC258
    Text: BC 177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 / o o er o LU LU THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9 BC257, 8, 9 are complementary to BC167, 8, 9


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    PDF BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC307, BC237, BC320, BC107 BC307 micro electronics bci77 BC178 BC179 BC237 BC258

    BC257

    Abstract: BC320 BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC177 BC178
    Text: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.


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    PDF BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC307, BC237, BC320, BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC178

    bc177

    Abstract: BC257
    Text: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.


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    PDF BC177, BC107, BC257, BC167, BC307, BC237, BC320, BC317, O-92B O-92F bc177 BC257

    BC307

    Abstract: BC308 BC309 BC308 PNP transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)


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    PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 BC308 PNP transistor

    BC307

    Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
    Text: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).


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    PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary

    BC307

    Abstract: BC308
    Text: SEMICONDUCTOR BC307/8/9 T E C H N I C A L DATA E PITA X IA L PLANAR PNP TRA N SIST O R G E N E R A L PU R PO SE A PPLICATION. LOW N O ISE A M PL IFIE R APPLICATIO N. FEA TU RES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)


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    PDF BC307 BC309 BC237/238/239. BC307/8/9 BC308 -10mA, 100MHz