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    BC258C Search Results

    BC258C Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC258C Bharat Electronics Shortform Transistor Data Short Form PDF
    BC258C Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BC258C Continental Device India PNP Plastic Transistors Scan PDF
    BC258C Crimson Semiconductor Transistor Selection Guide Scan PDF
    BC258C Micro Electronics Semiconductor Devices Scan PDF
    BC258C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BC258C Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BC258C Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BC258C Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BC258C Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BC258C Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BC258C Siemens PNP Silicon AF Transistors Scan PDF
    BC258C Sprague Semiconductor Data Book 1977 Scan PDF

    BC258C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA952L

    Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E


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    PDF 2N6009 BC328 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. BC258C V C80 V CEO (V) Min (V) Min ^EBO IV) Min 30 25 5 Pd ’c (W) (A) 6Tc=25°c 0.3 'cao (mA) Max 'c es v ce (V) (MA) Max


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    PDF O-92-1 BC258C BC259 BC259B BC307 BC307A BC307B BC307C BC308 BC308A

    8C317

    Abstract: BC3098 bc2388 BC306 8C239 bc238 BC259C TO92
    Text: DEVICE TYPE PA C K A G E B V C fO BVCBO B VE80 CBO # VCB IVI M M VI MIN BC237 BC237A BC237B BC238 BC238A N P N T O -92 N P N T O -92 N PN TO -92 N PN T O -9 2 N P N T O -92 (77 (77) (77) (77) (77) 45 45 45 20 20 50 50 50 30 30 BC2388 BC238C 8C239 BC239B


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    PDF BC237 BC237A BC237B BC238 BC238A BC2388 BC238C 8C239 BC239B BC239C 8C317 BC3098 BC306 BC259C TO92

    bc257b

    Abstract: No abstract text available
    Text: SPRAGUE/SENICOND I 8514019 GR O U P T3 SPRAGUE, D • 0513050 G0D3ST=] 1 ■ S E M I C O N D S / ICS 0 3 5 9 9 3> 93D PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C - Max. ^ BR CBO ^(BR)CEO V(BR)EBO


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    PDF O-226AA/STYLE bc257b

    NPN Transistor BC548B

    Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
    Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA


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    PDF BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA NPN Transistor BC548B transistor bc238b TP2369A t092 transistor pro-electron BCS48

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


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    PDF 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


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    PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor

    BC238B npn

    Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
    Text: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN


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    PDF BC182A BC182B BC212A EC212B BC237A BC237B BC238A BC168A BC168B BC168C BC238B npn BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BC307A

    Abstract: BC258C BC259 BC259B BC259C BC307 BC307B BC307C BC308 BC308A
    Text: TO-92 Plastic Package Transistore PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c (W) (A) @Tc=25’( *CBO VCB ' c e s Vce (HA) (V) (MA) O (V) Max Max e 'c & ^CE (mA) 00 ^CE(SAT) V BE(SAT) 'c (V) Max


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    PDF BC258C O-92-1 BC259 BC259B BC259C O-92-4 BC327-25 BC307A BC307 BC307B BC307C BC308 BC308A

    sC3228

    Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
    Text: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB


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    PDF 15514CHb 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 O-237 sC3228 BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416

    Untitled

    Abstract: No abstract text available
    Text: COIÎL TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) W @Tc=25°c 'c & (mA) @ Freq CDIL (MHz) (pF) Case Max Style @ V cbo ^CEO w Min (V) Min Min BC252C 30 25 5


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    PDF BC252C BC256 BC256A BC257 O-92-1

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


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    PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor

    CD423

    Abstract: SA1015 2NS400 PN544 T1S91 BC309C BC212
    Text: Maximum Ratings Type No. V CSO V Min VC60 (V) Electrical Characteristica (Ta=25'C, Unlesa Othacwise Spccified) £60 Pd (W) (V) (A) Mm 8Tc=25°! 2N3702 0.625 2N3905 0.625 2N3906 hFE e 'cao vce tes VCE (pA) 0 (V) (liA) #(V) Max Max Min 0.1 60 20 *0.05 0.625 0.2


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    PDF 2N3702 2N3905 2N3906 PN4356 PN5142 PNS143 PN5447 T1S91 TIS93 O-92-1 CD423 SA1015 2NS400 PN544 BC309C BC212

    BC286

    Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
    Text: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l


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    PDF 2S14096 2N1507 2N1566 2N1613 2NI711 2N1889 2N1890 2N1893 2N1973 2N1974 BC286 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367