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    BC307 PNP Search Results

    BC307 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    BC307 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC557AP

    Abstract: BC327-5 BC557VI BC557 sot-23 BCX71RG BC307A ME0412 LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 BCX17 BCX17R BC327 BC327-18 BC327-5 BCS07-16 BCW35 BCW37 BCW68R BCW68 BCW68 BCW68F BCX76 BC486A BC486L18 BC486L5 BCS60A BC557VI BC557VI BCW69 BC307 BC307-18 BC307-5 BC307A BC307A18 BC307A5 BC557AP


    Original     		PDF BCX17 BCX17R BC327 BC327-18 BC327-5 BCS07-16 BCW35 BCW37 BCW68R BCW68 BC557AP BC557VI BC557 sot-23 BCX71RG BC307A ME0412 LOW-POWER SILICON PNP

    BC307

    Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307 pnp BC238 datasheet BC239 transistor 309 BC309

    bc307

    Abstract: BC308
    Text: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, BC308

    BC307

    Abstract: BC307B BC307C BC308C BC307 Motorola
    Text: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C


    Original     		PDF BC307/D BC307 BC307B BC307C BC308C 226AA) BC307, BC307 BC307B BC307C BC308C BC307 Motorola

    BC308

    Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP
    Text: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.


    Original     		PDF BC307 BC308 BC309 BC307, BC308, BC309 BC307) BC3050MHz BC308 BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP

    Characteristic curve BC107

    Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage


    Original     		PDF BC307 BC307B BC307C BC308C 226AA) BC307, Junc218A MSC1621T1 MSC2404 Characteristic curve BC107 TRANSISTOR 308B BC237 BC108 characteristic

    BC307

    Abstract: BC308 BC308 PNP transistor BC309 309 IC
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC308 BC308 PNP transistor BC309 309 IC

    transistor BC 458

    Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309

    bc307

    Abstract: BC308 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 complementary

    bc307

    Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N


    Original     		PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary

    BC307

    Abstract: BC238 datasheet BC239 BC309 transistor bc237
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC238 datasheet BC239 BC309 transistor bc237

    bc307bta

    Abstract: BC307
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta

    BC308A

    Abstract: Transistor BC 308C BC307 Bc308
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307

    BC307

    Abstract: BC238 datasheet BC239 BC309 308 transistor
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC238 datasheet BC239 BC309 308 transistor

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC307 BC308 BC309 BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 bc3078 BC237

    T BC309

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 T BC309

    fr 309

    Abstract: BC307 309 T BC239 BC309
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 BC308/309 fr 309 BC307 309 T BC239 BC309

    BC307

    Abstract: No abstract text available
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307

    transistor bc 238 b

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W N OISE: BC309 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


    OCR Scan     		PDF BC307/308/309 BC309 BC307 transistor bc 238 b

    TYP 513 309

    Abstract: GE-514
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC3Q8/309 TYP 513 309 GE-514

    BC307

    Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
    Text: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).


    OCR Scan     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary

    BC307B

    Abstract: BC306C BC307C BC307 BC308C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC307 BC307B BC307C BC308C Amplifier Transistors PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector-Base Voltage Symbol BC307, B, C BC306C Unit VCEO -45 -25 Vdc VCBO -50 -30 Vdc


    OCR Scan     		PDF BC307, BC306C BC307 BC307B BC307C BC308C O-226AA) b3b7255 BC308C

    BC307

    Abstract: BC308 BC309 BC308 PNP transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)


    OCR Scan     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 BC308 PNP transistor

    bc307b

    Abstract: bc307 BC308C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C v CEO -45 -25 Vdc Collector-Base Voltage VCBO -50 -30 Vdc Emitter-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BC307 BC307B BC307C BC308C BC307, BC308C