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    BC337 DIE Search Results

    BC337 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    BC337 DIE Datasheets Context Search

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    BC337 pnp transistor datasheet

    Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC337-xBK BC338-xBK UL94V-0 BC337 BC338 25plement BC327 BC328 BC337 pnp transistor datasheet transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC328 BC337-16

    Untitled

    Abstract: No abstract text available
    Text: BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		PDF BC337 BC338 UL94V-0 BC337 BC327 BC328 BC337-16

    Untitled

    Abstract: No abstract text available
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC337-xBK BC338-xBK UL94V-0 BC337 BC338 BC327 BC328 BC337-16

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original     		PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    BC338-25

    Abstract: BC337-25 CBE BC337-16 CBE BC337 leads BC337 CBE BC337 10D3 BC327 BC328 BC337-16
    Text: BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		PDF BC337 BC338 UL94V-0 BC337 BC327 BC328 BC337-16 BC338-25 BC337-25 CBE BC337-16 CBE BC337 leads BC337 CBE 10D3 BC328 BC337-16

    BC337 CBE 1,0 A

    Abstract: BC337-25 CBE BC337-16 CBE BC337 CBE 10D3 BC327 BC328 BC337 BC337-16 BC337-25
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2010-05-27 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW


    Original     		PDF BC337-xBK BC338-xBK UL94V-0 BC337 BC338 BC327 BC328 BC337-16 BC337 CBE 1,0 A BC337-25 CBE BC337-16 CBE BC337 CBE 10D3 BC328 BC337 BC337-16 BC337-25

    bc337

    Abstract: NPN transistor 500ma TO-92 Transistor A12 BC337-16 BC-337-16 bc338-40 BC337 NPN transistor TRANSISTOR BC337-25 transistor bc33740 BC338
    Text: BC337-16/25/40，BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode TO-92 A Features Epitaxial planar die construction B Surface device type mounting E Moisture sensitivity level 1 G Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC337-16/25/40BC338-16/25/40 MIL-STD-202, 19gram C/10s BC337-16 Group16 BC337 BC338 NPN transistor 500ma TO-92 Transistor A12 BC-337-16 bc338-40 BC337 NPN transistor TRANSISTOR BC337-25 transistor bc33740

    transistors

    Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23
    Text: Application Applikation Bipolar Transistors Bipolartransistoren Nomenclature: Benennung: B – Silicon Transistor C – LF Low Power Transistor nnn – Serial Number X or -nn – hFE Group B – Siliziumtransistor C – NF Kleinleistungstransistor nnn – Serien-Nummer


    Original     		PDF BC807 BC808 BC817 BC818 BC846 BC847 BC848 BC849 BC850 BC856 transistors bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23

    optocoupler PC817

    Abstract: TSM103 L6590D L6590A offline switcher L6590 1N4148 SMD PACKAGE AWG23 bc337 SMD PACKAGE 1N4148
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


    Original     		PDF AN1261 L6590 optocoupler PC817 TSM103 L6590D L6590A offline switcher 1N4148 SMD PACKAGE AWG23 bc337 SMD PACKAGE 1N4148

    optocoupler PC817

    Abstract: L6590D L6590A Diode 1N4005 silicon offline switcher china tv circuit diagram L6590 AWG23 ferrite n67 N67 TRANSFORMER
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


    Original     		PDF AN1261 L6590 optocoupler PC817 L6590D L6590A Diode 1N4005 silicon offline switcher china tv circuit diagram AWG23 ferrite n67 N67 TRANSFORMER

    bc337 equivalent SMD

    Abstract: bc337 pin out diagram E20/10/6 transformer 4 pin size ferrite n67 optocoupler IC PC817 optocoupler PC817 BC337 circuit example bc337 SMD PACKAGE cxb 100 transformer optocoupler IC PC817 pin details
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


    Original     		PDF AN1261 L6590 bc337 equivalent SMD bc337 pin out diagram E20/10/6 transformer 4 pin size ferrite n67 optocoupler IC PC817 optocoupler PC817 BC337 circuit example bc337 SMD PACKAGE cxb 100 transformer optocoupler IC PC817 pin details

    BC337 circuit example

    Abstract: optocoupler PC817 optocoupler IC PC817 ferrite n67 L6590D optocoupler IC PC817 pin details bc337 pin out diagram TRANSISTOR BC337 SMD tl431 and pc817 L6590
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


    Original     		PDF AN1261 L6590 BC337 circuit example optocoupler PC817 optocoupler IC PC817 ferrite n67 L6590D optocoupler IC PC817 pin details bc337 pin out diagram TRANSISTOR BC337 SMD tl431 and pc817

    ferrite n67

    Abstract: PC817 example circuits TSM103 L6590D L6590A crt tv flyback transformer pin connections cxb 100 transformer N67 ferrite offline switcher SMD optocoupler IC PC817
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


    Original     		PDF AN1261 L6590 ferrite n67 PC817 example circuits TSM103 L6590D L6590A crt tv flyback transformer pin connections cxb 100 transformer N67 ferrite offline switcher SMD optocoupler IC PC817

    BC337 CBE

    Abstract: bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC337 BC338 BC338 CBE
    Text: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		PDF BC327 BC328 UL94V-0 BC327 BC337 BC338 BC327-16 BC337 CBE 10D3 BC327-16 BC327-25 BC327-40 BC328 BC338 BC338 CBE

    Untitled

    Abstract: No abstract text available
    Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC327-xBK BC328-xBK UL94V-0 BC327 BC328 BC337 BC338 BC327-16

    BC327 NPN transistor datasheet

    Abstract: bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16
    Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC327-xBK BC328-xBK UL94V-0 BC327 BC328 BC337 BC338 BC327-16 BC327 NPN transistor datasheet bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16

    Untitled

    Abstract: No abstract text available
    Text: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		PDF BC327 BC328 UL94V-0 BC327 BC337 BC338 BC327-16

    TSM103

    Abstract: L6590D BC337 L6590A offline switcher BZW06-154 PC-817 equivalent AWG23 AN1261 BC327
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


    Original     		PDF AN1261 L6590 TSM103 L6590D BC337 L6590A offline switcher BZW06-154 PC-817 equivalent AWG23 AN1261 BC327

    OF4455

    Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
    Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


    OCR Scan     		PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor

    TDA1022

    Abstract: VALVO nf schaltungen TDA 5500 BAW62 schaltungen mit TDA1022 schaltungen tda 1022 Schieberegister Integrierte Schaltungen
    Text: TDA1022 Monolithische integrierte Schaltung 512 stufiges AKALOGES MOS - SCHIEBEREGISTER Eimerketten - Schaltung zur Verzögerung analoger Signale -013 -0 1 6 Do •— -09 UU tfn 1o- lif liTTir 512 nr 513 L TU. 514 u,j— y„— . ir-0 r V Z 71 O tt) Kur'zdaten:


    OCR Scan     		PDF TDA1022 VZ710UI OT-38) BAW62 50kHz TDA1022 VALVO nf schaltungen TDA 5500 BAW62 schaltungen mit TDA1022 schaltungen tda 1022 Schieberegister Integrierte Schaltungen

    bc337 TRANSISTOR equivalent

    Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103
    Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier


    OCR Scan     		PDF BLT10 OT103 MSB037 OT103. 711002b bc337 TRANSISTOR equivalent TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29