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    BC548BP

    Abstract: BC549BP PN4013 BC453C 2SC2859Y TBC548 PE254 BF127 BF253 BF121
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 BC848 BC848 2SC3940 TEC8013F JE9101B BC232M 2N5377 BF253-3 BC548P BC548PK ~g~:~~~ 15 20 BC548PS BC54SVI BC54SVIP BC549P TECS013G PE254B 2N5376 2SC3341 ¥~~~13H 25 30 PN4013 2N4013 BF253-4 JE9101C


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    PDF BC848 2SC3940 TEC8013F JE9101B BC232M 2N5377 BF253-3 BC548P BC548PK BC548BP BC549BP PN4013 BC453C 2SC2859Y TBC548 PE254 BF127 BF253 BF121

    bcs47

    Abstract: No abstract text available
    Text: BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS Generai purpose N -P -N transistors M arking BC846 - ID BC846A = 1A BC846B = IB BC847 = 1H BC847A - IE BC847B - IF BCS41C - 1G BC84S - m BC848A = 1J BC848B = IK BC848C - 1L PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m


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    PDF BC846 BC847 BC848 BC846A BC846B BC847A BC847B BCS41C bcs47

    BC84S

    Abstract: No abstract text available
    Text: IL BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N-P-N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1] BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    PDF BC846 BC847 BC848 BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC84S

    BC8468

    Abstract: BC347C BCS46A pnp 400V BC347 BCS48 BC8508 BCS46B BC347A BC349
    Text: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C 1 General Purpose Transistor P N P Silicon "M oisture Sen sitivity Level M A R K IN G M A R R A M n X X - Drvfc» Codt See 1.M * H rlow > SOT-23 1 •U * E S D Rating • Hum an B o d y M odel:> 4000V D M ach in e Model: >4-00V


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    PDF BCK46AVB-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C BC846 BC847, BC850 BC848, BC849 BC8468 BC347C BCS46A pnp 400V BC347 BCS48 BC8508 BCS46B BC347A BC349

    MLC850

    Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
    Text: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency


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    PDF BFG11 BFG11/X OT143 BFG11 BFG11/X OT143. 711DflSb MLC850 equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR

    2FP TRANSISTOR

    Abstract: 2gp Transistor BCB50C BC850 BCB50 marking 2Fp BC849C BC849 bc849b bc850c, sot23
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.


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    PDF BC849; BC850 BC859 BC860. BC849 BC849B BC849C BC850 BC850B BC850C 2FP TRANSISTOR 2gp Transistor BCB50C BCB50 marking 2Fp BC849C bc850c, sot23