Untitled
Abstract: No abstract text available
Text: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m
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BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
BC857C
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Untitled
Abstract: No abstract text available
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M ark in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H J - 0_ BC857A = 3E 2.8 0 .14 0.48 BC857B = 3F BC857C = 3G 0.38 BC858 = 3M 3 BC858A = 3]
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BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
BC857C
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Untitled
Abstract: No abstract text available
Text: 7 PLESSEY SEMICOND/DISCRETE dF| 7 5 2 0 S 3 B D D G b b a O 5 | ~ ^ ~ Q 3 BC856 BC858 BC860 PNP silicon planar general purpose transistors BC857 BC859 A B S O L U T E M A X I M U M R A TIN G S Parameter Sym bol Collector-base voltage V cbo BC856 -8 0 BC857
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BC856
BC858
BC860
BC857
BC859
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bcb57b
Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Text: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80
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0DbflH37
BC856
BC857
BC858
OT-23
BC856
200/xA
OT-23.
bcb57b
BCB57
BC856B 3BP
BC856A
BC856B
silicon planar epitaxial transistors
BC857A
BC857B
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transistor bc 649
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 17 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING • Low curren t max. 100 mA
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BC856;
BC857
BC847.
BC857B
BC857C
SCA63
115002/00/03/pp8
transistor bc 649
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857
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BC856ALT1/D
BC856ALT1
BC857ALT1,
BC858ALT1
BC856
BC857
BC858
-236A
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857
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BC847
BC857
OT-23
OT-23
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bc 184 transistor
Abstract: BC857AR transistors 3Kr transistors marking HJ BC856AR 3AR 3ER 3FR on TRANSISTOR BC 187 TRANSISTOR BC 187 BC856 BC857
Text: 1 N AMER PHILIPS/DISCRETE ^53*131 G015537 Ö OLE D BC856 BC857 BC858 T ' W - i S ' SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film circuits.
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LbS3T31
G015537
BC856
BC857
BC858
OT-23
200/LIA
00155M3
bc 184 transistor
BC857AR
transistors 3Kr
transistors marking HJ
BC856AR
3AR 3ER 3FR
on TRANSISTOR BC 187
TRANSISTOR BC 187
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BC856B
Abstract: BC666 BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A
Text: • bbS3^31 0024471 4b4 BIAPX N AMER PHILIPS/DISCRETE BC856 BC857 BC858 b?E D J V . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 C o lle c to r-e m itte r voltage + V g g = 1 V
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BC856
BC857
BC858
OT-23
BC857
BC856B
BC666
BC856
BC856A
BC857A
BC857B
BC857C
BC858
BC858A
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c857
Abstract: TRA BC857 KH SOT23
Text: r Z 7 SGS-THOMSON Ä T # Kffloeœiniera «® BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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BC857
BC858
BC847
OT-23
c857
TRA BC857
KH SOT23
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PDF
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BC656
Abstract: No abstract text available
Text: MAXIMUM RATINGS Symbol BC856 BC857 BC858 Unit C o lle ctor-E m itter Voltage Rating v CEO -6 5 -4 5 -3 0 V C ollector-Base Voltage v CBO -8 0 -5 0 -3 0 V Em itter-Base Voltage v EBO - 5.0 - 5 .0 - 5 .0 V >C '1 0 0 -1 0 0 -1 0 0 m A dc C o lle ctor C u rrent — C ontinuous
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BC856
BC857
BC858
BC856ALT1*
BC857ALT1*
BC858ALT1*
OT-23
O-236AB)
OT-23
BC656
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PDF
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Untitled
Abstract: No abstract text available
Text: BC856 BC858 BC860 S 0 T 2 3 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC857 BC859 PAR TM AR KIN G D ETAILS:BC 856A - 3A B C 858C - B C 856B - 3B BC 859A - 4A 3L B C 857A - 3E BC 859B - 4B B C 85 7 B - 3F B C 859C - 4C B C 85 7 C - 3G B C 8 6 0 A - 4E
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BC856
BC858
BC860
BC857
BC859
BC856
BC857
BC858
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PDF
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BC858R
Abstract: No abstract text available
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P tra n s is to rs , in a S O T -2 3 p la s tic package. Q U IC K R E F E R E N C E D A T A C o lle c to r-e m itte r vo lta g e + V g g = 1 V ~ V CEX C o lle c to r-e m itte r vo lta g e (o pen base)
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BC856
BC857
BC858
BC858R
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TRA BC857
Abstract: LT1M
Text: MAXIMUM RATINGS Symbol BC856 BC857 BC858 Unit C o lle c to r -E m itte r V o lta g e Rating v CEO -6 5 -4 5 -3 0 V C o lle c to r-B a s e V o lta g e VCBO -8 0 -5 0 -3 0 V E m itte r-B a s e V o lta g e v EBO - 5.0 - 5.0 - 5.0 V 'c -1 00 -1 00 -1 0 0 m Adc
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BC856
BC857
BC858
BC856ALT1*
BC857ALT1*
BC858ALT1*
OT-23
O-236AB)
TRA BC857
LT1M
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PDF
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BC860
Abstract: Q002 BC846 BC850 BC856 BC856A BC856AR BC857 BC858 BC859
Text: ITT SEMICOND/ INTERMETALL 5ÜE ] • i4bfi5711 ÜQDBS^Lf bTO H I H n -2 .q -is BC856 . . . BC860 PNP Silicon Epitaxial Planar Transistor fo r sw itching and AF am plifier applications. i — i— n -n b - Especially suited for automatic insertion in thick- and thin-film
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BC856
BC860
BC856
BC857,
BC858,
BC859
BC860
BC846
Q002
BC846
BC850
BC856A
BC856AR
BC857
BC858
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PDF
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bc860
Abstract: MARKING CODE 3J marking 4A
Text: ITT SEMICOND/ INTERMETALL SDE T> • Mbñ2711 0DD2S'ì4 b’iG M I S I T - a q - i s BC856 . . . BC860 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits.
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BC856
BC860
BC856
BC857,
BC858,
BC859
BC860
BC846
MARKING CODE 3J
marking 4A
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BC857
Abstract: BC857 KEC MARKING KEG SOT-23 BC856 BC856B BC856A BC857A BC857B BC857C BC858
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846/847/848. DIM A B C D E G H J MAXIMUM RATINGS Ta=25°C
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BC856/7/8
BC846/847/848.
BC856
BC857
BC858
BC857
BC857 KEC
MARKING KEG SOT-23
BC856B
BC856A
BC857A
BC857B
BC857C
BC858
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BC857 ITT
Abstract: bc859
Text: BC856 . BC859 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC856
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BC856
BC859
BC856
BC857,
BC858
BC859
BC846.
BC849
BC856A
BC857 ITT
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PDF
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Untitled
Abstract: No abstract text available
Text: BC856 THRU BC859 Small Signal Transistors PNP FEATURES SOT-23 .118 ( 3 . 0 ) .016 ( 0 .4 ) ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits.
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BC856
BC859
OT-23
BC857,
BC858
BC859
BC846
BC849
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PDF
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3B marking
Abstract: BC846-BC848 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C
Text: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available
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BC856A
BC858C
BC846-BC848)
OT-23,
MIL-STD-202,
BC857C
BC856B
BC858A
BC857A
3B marking
BC846-BC848
BC857B
BC858B
BC858C
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PDF
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C858C
Abstract: No abstract text available
Text: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features • • • • • Epitaxial Die Construction Ideally Suited tor Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848)
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BC856A
BC858C
BC846-BC848)
OT-23
OT-23,
MIL-STD-202,
BC856B
BC857A
BC857B
C858C
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BW T1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
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BC856AWT1
BC857AWT1
BC858AWT1
OT-323/SC-70
BC856
BC857
BC858
b3b7255
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PDF
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ku 602 vc
Abstract: difference between bc856a bc856b
Text: M O TO R O LA Order this document by b c 8 5 6 a w ti/d SEMICONDUCTOR TECHNICAL DATA General Purpose TVansistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BW T1, CWT1 PNP Silicon designed for low power surface mount applications. Motorola Preferred Devices
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BC856AWT1
BC857AWT1
BC858AWT1
BC856
BC857
BC858
OT-323/SC-70
2PHX34990F-O
BC856AWT1/D
ku 602 vc
difference between bc856a bc856b
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PDF
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Untitled
Abstract: No abstract text available
Text: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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OCR Scan
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bcs57
BC858
BC857
BC847
OT-23
BC857/BC858
OT-23
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PDF
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