BC857S

Abstract: CBVK741B019 F63TNR FDG6302P SC70-6
Contextual Info: BC857S BC857S E2 B2 C1 C2 SC70-6 Mark: 3C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. PNP Multi-Chip General Purpose Amplifier

transistor BC 339

Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Contextual Info: BC856S/BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: BC857S BC857S E2 B2 C1 SC70-6 Mark: 3C pin #1 B1 E1 C2 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. PNP Multi-Chip General Purpose Amplifier

Contextual Info: BC857S BC857S E2 B2 C1 C2 SC70-6 Mark: 3C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. PNP Multi-Chip General Purpose Amplifier

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability

Contextual Info: BC856S/BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

sot-363 MARKING

Abstract: sot-363 marking 3C
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x • • • BC857S Multi-chip Transistor Ultra-Small Surface Mount Package

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors  BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking 3cs

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50

Contextual Info: BC857S PNP, Multi-Chip, General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .3C Mark: .2A

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. BC847S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRAN SISTO R *Compleiiieit to BC857S ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: P * FORWARD INTERNATIONAL ELECTRONICS LTD. BC857S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR •Complement to DC847S ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Characteristic Symbol Rating Unit Collector-Base Voltage

Contextual Info: BC856S/BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

3c sot363

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability

transistor marking 6c1

Abstract: transistor marking E2 3Ds SOT363
Contextual Info: BC856S/BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 B2 PCM : 300 mW(Tamb=25℃) E2 Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -50

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 PCM : 300mW(Ta=25℃) B2 E2 Collector current ICM : -200mA Collector-base voltage V(BR)CBO : -50V

MARKING 3cs

Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

BC857S

Contextual Info: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)

BC857S

Abstract: VPS05604
Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

sot363 marking DATE code

Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
Contextual Info: BC856S/BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor marking 6c1

Contextual Info: BC856S/BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

MARKING 3cs

Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • x x • • • BC857S PNP Plastic-Encapsulate Halogen free available upon request by adding suffix "-HF"