IS66WVD1M16ALL
Abstract: 66WVD1M16ALL
Text: IS66WVD1M16ALL 16Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
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IS66WVD1M16ALL
IS66WVD1M16ALL
16Mbit
-40oC
1Mx16
IS66WVD1M16ALL-7013BLI
54-ball
IS66WVD1M16ALL-7010BLI
66WVD1M16ALL
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Untitled
Abstract: No abstract text available
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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Untitled
Abstract: No abstract text available
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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MT45W1MW16BDGB
09005aef81cb58ed
09005aef81c7a667
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IS66WVD1M16ALL
Abstract: CellularRAM 66WVD1M16ALL IS66WVD1M16ALL-7010BLI
Text: IS66WVD1M16ALL Advanced Information 16Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device uses a
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IS66WVD1M16ALL
IS66WVD1M16ALL
16Mbit
-40oC
1Mx16
IS66WVD1M16ALL-7013BLI
IS66WVD1M16ALL-7010BLI
IS66WVD1M16ALL-7008BLI
54-ball
CellularRAM
66WVD1M16ALL
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Untitled
Abstract: No abstract text available
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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16MB_BURST_CR1_0_P23Z
Abstract: active suspension sensor MT45W1MW16BDGB
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages:
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
16MB_BURST_CR1_0_P23Z
active suspension sensor
MT45W1MW16BDGB
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Untitled
Abstract: No abstract text available
Text: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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Untitled
Abstract: No abstract text available
Text: Advance‡ 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/. Features Figure 1: • Single device supports ASYNCHRONOUS, PAGE,
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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Untitled
Abstract: No abstract text available
Text: Advance‡ 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
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Untitled
Abstract: No abstract text available
Text: K1C1616B2B UtRAM2 16Mb 1M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C1616B2B
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Untitled
Abstract: No abstract text available
Text: IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device
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IS66WVC1M16ALL
IS67WVC1M16ALL
IS66WVC1M16ALL
IS67WVC1M16ALL
16Mbit
-40oC
1Mx16
IS66WVC1M16ALL-7013BLI
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K1C1616B8B
Abstract: No abstract text available
Text: K1C1616B8B UtRAM2 16Mb 1M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C1616B8B
K1C1616B8B
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IS66WVC1M16ALL
Abstract: CellularRAM 66WVC1M16ALL
Text: IS66WVC1M16ALL Advanced Information 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several
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IS66WVC1M16ALL
16Mbit
-40oC
1Mx16
IS66WVC1M16ALL-7013BLI
IS66WVC1M16ALL-7010BLI
IS66WVC1M16ALL-7008BLI
54-ball
CellularRAM
66WVC1M16ALL
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DQ100
Abstract: transistor d514
Text: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K1C5616BKB
256Mb
x16bit)
DQ100
transistor d514
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S71WS512ND0BFWEP
Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
S71WS512ND0BFWEP
LZ 48H 526
71WS512ND0BFWEP
BAX55
S71WS512
71WS512ND
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-00
S71WS-N-00
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BAX55
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-00
S71WS-N-00
BAX55
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Spansion NAND Flash DIE
Abstract: Spansion NAND Flash S29WS064N S29WS128N S29WS256N S75WS256NDF S75WS-N sa69256 sample code read and write flash memory spansion
Text: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) CellularRAM and 512 Mb (32M x 16-bit) Data Storage Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications
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S75WS256Nxx
16-bit)
S75WS-N-00
S75WS-N-00
Spansion NAND Flash DIE
Spansion NAND Flash
S29WS064N
S29WS128N
S29WS256N
S75WS256NDF
S75WS-N
sa69256
sample code read and write flash memory spansion
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405-BG5H-0
Abstract: C901
Text: .250” MOUNT PANEL LIGHTS ÎOMOMO] 40 Series Data Display Products Mounting Hardware Provided For Detailed LED Data, See Discrete Section, MODEL 200 • LED W in * Model C" Optional 405P41 44 46 461 464 W Optional Color -CR -ECR -BR -BCR -NWR -R6K -NWO
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405P41
UL1061
405-BG5H-0
C901
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Untitled
Abstract: No abstract text available
Text: .312” MOUNT PANEL LIGHTS 212Iä 50 Series, Single-Chi/ Data Display Products •Mounting Hardware Provide« For Detailed LED Data, See Discrete Section, MODEL 20< LED Model 51 531'1 54 56 561 564 Wires W Optional Color -ECR -BCR -NWR -NWO -ECA -NWA -BCA
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UL1061
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Untitled
Abstract: No abstract text available
Text: r0M0g0: T-1% SLIDE BASED LAMP Low Profile Data Display Products For Detailed LED Data, See Discrete Section, MODEL 18C RED RED RED RED ORG ORG AMB AMB YEL YEL GRN GRN GRN GRN Ï. T5.5K 55KSB111 -ER Narrow Base -ECR 5TSB Short No. 5 •BR -BCR -EA -ECA -BA
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55KSB1
V/27mA
V/40mA
2V/27mA
4V/35mA
5V/24mA
V/28mA
4V/17mA
6V/20mA
8V/16
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H-17
Abstract: H-18 H-19
Text: 188 - - 30AM 0 % nts% ïïi 30A o fcifcß#Ba f r t -7ttŒ ± # $ 20V/fis ffi&ñffif I drm 77” 30 -8 500 400 BCR AM Vd s m /riKMS ¡TSM r-'t PCM P gî AVI V gu J gm di/dl T, T"' o V dhm 300 (60Hz, 378 (60Hz, 5 0.5 10 2 125 40—125 — O iîL 1 -y- 4 7
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bcr30am
mt-24
bcr30am-8
bcr30am-12
H-101
H-17
H-18
H-19
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BCR16HM
Abstract: BCR16HM-4 BCR16HM-10 BCR16HM-12 BCR16HM-6 BCR16HM-8
Text: - 185 L f f i f r h b :s 3 > •-<1- V h O ^ "7 im -f- — : - * i b j , a c 2200V i f t m n S lH tttt t .= Œ : ( 2 5*0 ¡01] I drm Vtm B C R 1 6 H M -4 BCR 1 6 H M -6 BC R 1 6 H M -8 BCR16HM -10 B CR16H M -12 V dsm 300 400 600 700 800 V drm 200 300 400
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BCR16HM
MT-23
BCR16HM-4
BCR16HM-6
BCR16HM-8
BCR16HM-10
BCR16HM-12
H-101
BCR16HM-12
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BCR10EM-10
Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Text: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800
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BCR10AM-4
BCR10AM-6
BCR10AM-8
BCR10AM-10
BCR10AM-12
H-101
BCR10EM-10
TA8250
BCR10AM
BCR10AM-12
BCR10EM-6
BCR10EM-8
BCR10EM-4
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