DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
|
Original
|
PDF
|
UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
|
DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
|
Original
|
PDF
|
SM544083U74S6UU
128MByte
4Mx16
DQ111
|
Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
|
Original
|
PDF
|
SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
|
BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
|
Original
|
PDF
|
HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
|
k 1358
Abstract: 56FBGA
Text: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations
|
Original
|
PDF
|
SST34WA32A3
SST34WA32A4
SST34WA3283
SST34WA3284
SST34WA32x3
SST34WA32x4
MO-225,
56-fbga-MVN-6x8-1
56-Ball
S71358-01-000
k 1358
56FBGA
|
BQ2001
Abstract: No abstract text available
Text: Q Series Data Sheet 66 – 132 Watt DC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 V • Class I equipment • Extremely high efficiency of up to 90%
|
Original
|
PDF
|
BCD20011-
12-Mar-2012
BQ2001
|
DQ124
Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
|
Original
|
PDF
|
UG016E14488HSG
200-Pin
256MB
2560mil)
DQ124
DQ77
DQ100
DQ99
DQ87
DQ88
DQ111
DQ106
DQ72
DQ79
|
DQ112
Abstract: UG016C14488HSG-6 DQ100 DQ88
Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
|
Original
|
PDF
|
UG016C14488HSG
200-Pin
256MB
2560mil)
DQ112
UG016C14488HSG-6
DQ100
DQ88
|
Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
|
Original
|
PDF
|
UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
|
GR-1244-CORE
Abstract: GR-253-CORE IDT82V3280 GR-1377-CORE 19.440 MHz TCXO
Text: WAN PLL IDT82V3280 Version 2 June 19, 2006 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry
|
Original
|
PDF
|
IDT82V3280
PN100)
PNG100)
DQ100)
DQG100)
82V3280
GR-1244-CORE
GR-253-CORE
IDT82V3280
GR-1377-CORE
19.440 MHz TCXO
|
48 VOLT 20AMP battery charger
Abstract: lm1785 BP1601 ZY2105 qts48t46096 PSR53-7 HBD060ZGE-A MPB150 40IMX35D05D15-8 FXP7000-48-S
Text: Z-One Digital Power Analog POL Isolated DC-DC Front Ends Chassis Mount PoE Ruggedized CompactPCI Renewable Energy Network Power Systems Intelligent Controls 2010 Online Product Update Table of Contents Point-Of-Load Conversion & Management Bus Programmable Digital POL Solutions
|
Original
|
PDF
|
LKP5662-7R
LKP5660-7R
LKP5661-5R
48 VOLT 20AMP battery charger
lm1785
BP1601
ZY2105
qts48t46096
PSR53-7
HBD060ZGE-A
MPB150
40IMX35D05D15-8
FXP7000-48-S
|
LWN2880-6
Abstract: No abstract text available
Text: Z-One Digital Power Analog POL Isolated DC-DC Front Ends Chassis Mount Modular Products 2010 ONLINE AC-DC & DC-DC POWER SOLUTIONS PRODUCT UPDATE PoE CompactPCI Ruggedized Table of Contents Point-Of-Load Conversion & Management Bus Programmable Digital POL Solutions
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8
|
Original
|
PDF
|
UG016C14488HSG-6
200Pin
U016C14488HSG-6
400mil
20bit
240mil
2560mil)
|
Untitled
Abstract: No abstract text available
Text: WAN PLL IDT82V3285 Version March 02, 2009 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry
|
Original
|
PDF
|
IDT82V3285
DQ100)
DQG100)
82V3285
|
|
|
MT18DT8144G
Abstract: No abstract text available
Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM
|
Original
|
PDF
|
200-pin,
128MB
192-cycle
MT18DT8144G
DQ995
MT18DT8144G
|
gqxxxx
Abstract: uster E131905 BQ2001 CH-8610
Text: File E131905 Vol. 15 Sec. 3 and Report Page 1 Issued: Revised: 1996-05-07 2008-04-25 DESCRIPTION PRODUCT COVERED: * USR/CNR: DC/DC Power Supply, Q Series represented by YQXXXX-WZ where Y represents letters B, C, D, E, G, or 48, X represents a number 0-9 which
|
Original
|
PDF
|
E131905
BQ1101
BQ1001
BQ2320
BQ2540
BQ2660
BQ2001
CH-8610,
gqxxxx
uster
E131905
BQ2001
CH-8610
|
Q2000 dc dc converter
Abstract: BQ2001
Text: Q Series Data Sheet 66 - 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%
|
Original
|
PDF
|
89/336/EEC
BCD20011-G
Q2000 dc dc converter
BQ2001
|
BQ2001
Abstract: No abstract text available
Text: Q Series Data Sheet 66 - 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%
|
Original
|
PDF
|
300132lusively
89/336/EEC
BCD20011-G
14-May-09
BQ2001
|
smart modular
Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
|
Original
|
PDF
|
SM51441000
16MByte
SM51441000
16-megabyte
100-pin,
72-bit
70/80ns
20/18W
smart modular
SMART Modular Technologies
SM51441000-7
SM51441000-8
|
EQ2660-9R
Abstract: BQ2660-9R CQ2660-9R BQ2320-9R Q2000 dc dc converter BQ2540-9R BQ2001 DQ100 RIA12 BQ2001-9R
Text: Q Series Data Sheet 66 – 132 Watt DC-DC Converter Features • RoHS lead-free-solder and lead-solder-exempted products are available • Wide input voltage ranges up to 150 VDC • 1 or 2 isolated outputs from 3.3 to 48 VDC • Class I equipment • Extremely high efficiency of up to 90%
|
Original
|
PDF
|
BCD20011-G
22-Dec-09
EQ2660-9R
BQ2660-9R
CQ2660-9R
BQ2320-9R
Q2000 dc dc converter
BQ2540-9R
BQ2001
DQ100
RIA12
BQ2001-9R
|
p720C
Abstract: No abstract text available
Text: WAN PLL IDT82V3280 Version 1 September 28, 2005 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry
|
Original
|
PDF
|
IDT82V3280
its28,
82V3280
PN100)
PNG100)
DQ100)
DQG100)
p720C
|
Untitled
Abstract: No abstract text available
Text: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector
|
OCR Scan
|
PDF
|
MT2D88C25632,
MT4D88C5123Z
88-pin
MT2DMC25C32.
C51232
GD11374
MT4D88C51232
MT20MC2S632.
|
D4512
Abstract: d4512844 D29D31 DQ200-V D45128
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.
|
OCR Scan
|
PDF
|
MC-4564EC726
72-BIT
MC-4564EC726
uPD45128441
-4564EC726EFB-A80
-4564EC726EFB-A10
D4512
d4512844
D29D31
DQ200-V
D45128
|
MB81C4256
Abstract: No abstract text available
Text: February 1990 Edition 1.0 DATA SHEET FUJITSU MB81C4256-70U-80U-10U-12L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu M B81C4256 is a CM OS, fully decoded dynam ic RAM organized as 262,144 words x 4 bits. The MB81C4256 has been designed fo r mainframe memories,
|
OCR Scan
|
PDF
|
MB81C4256-70U-80U-10U-12L
B81C4256
MB81C4256
MB81C4256-70L
MB81C4256-80L
MB81C4256-1
MB81C4256-12L
C26064S-1C
|
