Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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CMP12
Abstract: SM5904CF CXD2517
Text: SM5904CF compression and non compression type shock-proof memory controller NIPPON PRECISION CIRCUITS INC. Overview The SM5904CF is a compression and non compression type shock-proof memory controller LSI for compact disc players. The compression level can
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SM5904CF
SM5904CF
16-bit/MSB
NC9926AE
CIRCUITS-35
CMP12
CXD2517
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CMP12
Abstract: SM5904BF CAS-000
Text: SM5904BF compression and non compression type shock-proof memory controller NIPPON PRECISION CIRCUITS INC. Overview The SM5904BF is a compression and non compression type shock-proof memory controller LSI for compact disc players. The compression level can
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SM5904BF
SM5904BF
16-bit/MSB
NC9820BE
CIRCUITS-35
CMP12
CAS-000
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PDF
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CMP12
Abstract: SM5905AF
Text: SM5905AF compression and non compression type shock-proof memory controller NIPPON PRECISION CIRCUITS INC. Overview The SM5905AF is a compression and non compression type shock-proof memory controller LSI for compact disc players. The compression level can
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SM5905AF
SM5905AF
16-bit/MSB
384fs
NC9814BE
CIRCUITS-35
CMP12
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PDF
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DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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MT29F8G08ABABA
Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status
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MT29F8G08ABABA,
MT29F8G08ABCBB
09005aef8386131b
MT29F8G08ABABA
MT29F8G08ABABAWP
MT29F8G08aba
MT29F8G08A
MT29F8G08ab
29f8g08
Micron NAND flash
M61A
8gb FLASH DRIVE
00H-31H
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W3E32M72SR-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Reduced part count Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm
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W3E32M72SR-XSBX
32Mx72
266Mb/s
E32M72SR-XSBX
W3E32M72SR-XSBX
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W3E16M72S-XBX
Abstract: W3E32M72S-XBX
Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply
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W3E16M72S-XBX
16Mx72
W3E16M72S-XBX
W3E32M72S-XBX
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of
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WEDPN16M72V-XBX
16Mx72
128MByte
864-bit
100MHz,
125MHz
100MHz
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M72V-XBX
8Mx72
125MHz
WEDPN8M72V-XBX
64MByte
512Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728
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WEDPN8M72VR-XBX
8Mx72
WEDPN8M72VR-XBX
64MByte
512Mb)
100MHz
66MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728
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WEDPN8M72VR-XBX
8Mx72
WEDPN8M72VR-XBX
64MByte
512Mb)
100MHz
66MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN16M72V-XBX
16Mx72
125MHz
128MByte
864-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72V-XBX 16Mx72 Synchronous DR AM DRAM Preliminary* FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM
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WEDPN16M72V-XBX
16Mx72
125MHz
128MByte
864bit
100MHz
125MHz
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WEDPN4M72V-XBX
Abstract: No abstract text available
Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz,
WEDPN4M72V-XBX
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xf 017
Abstract: zx 15 itt SFT243 4096U D85H 6.3 UTE cxd2517 m6 90 v-0 CMP12 SM5902
Text: L L < r •Ü â K V ’> o , CM ^ O n ! - ! * »S 5\ N i V < ^ A m iS 1 1 *r »h ?\ N w *A ilfln j V .•tí fN t 1K & > N • • cos m vV K p l¿ j- G a > i 2 i * ih >\ K 3 n? « A V +6 j- § g f* 1 SP SR SS 1 & u . to m ri £ s“s o3 j - ttr j - 4< ì? ! P ! A
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OCR Scan
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13S3HN
T05IDSZ
UC60E
SM5902AF
sm5902aft
16MDRAM
4096U
rTfflS531-1
NC9618B
xf 017
zx 15 itt
SFT243
D85H
6.3 UTE
cxd2517
m6 90 v-0
CMP12
SM5902
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PDF
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X101
Abstract: X110
Text: Gl SGS-THOMSON ST95081 M ê i s i m ‘ïïT i3 © r a g s _ SERIAL ACCESS SPI BUS 8K (1024 x 8 EEPROM PRELIMINARY DATA 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE
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OCR Scan
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ST95081
ST95081
8R33mEgTlÂ
7TETE37
DD7523D
DD7SS31
X101
X110
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PDF
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Untitled
Abstract: No abstract text available
Text: f Z Ä 7 S G S -T H O M S O N 7 # u D m o is L io T r ^ M e i S T B 1 0 N A 4 0 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 V dss RdS od Id 400 V < 0.55 a 10 A • . . . . . B . TYPICAL Rds(oii) = 0.46 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING
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OCR Scan
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STB10NA40
O-262)
O-263)
O-263
O-262
7T2T237
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PDF
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upd7220
Abstract: No abstract text available
Text: CHAPTER 5. 1 HOST INTERFACE 1.1 AGDC INITIALIZATION CONTROL The AGDC must be reset upon power-up. Refer to the next section for details of the resetting procedure. After the AGDC has been reset: Preprocessor and drawing-processor . Idling state (ready to accept commands)
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OCR Scan
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007EbET
12-pixel
b42752S
upd7220
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PDF
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