DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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DQ124
Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016E14488HSG
200-Pin
256MB
2560mil)
DQ124
DQ77
DQ100
DQ99
DQ87
DQ88
DQ111
DQ106
DQ72
DQ79
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DQ112
Abstract: UG016C14488HSG-6 DQ100 DQ88
Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016C14488HSG
200-Pin
256MB
2560mil)
DQ112
UG016C14488HSG-6
DQ100
DQ88
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Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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Untitled
Abstract: No abstract text available
Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8
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UG016C14488HSG-6
200Pin
U016C14488HSG-6
400mil
20bit
240mil
2560mil)
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MT18DT8144G
Abstract: No abstract text available
Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM
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200-pin,
128MB
192-cycle
MT18DT8144G
DQ995
MT18DT8144G
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smart modular
Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000
16MByte
SM51441000
16-megabyte
100-pin,
72-bit
70/80ns
20/18W
smart modular
SMART Modular Technologies
SM51441000-7
SM51441000-8
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SiS301
Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.
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SiS300
128-bit
SiS301
bt815
SILICON INTEGRATED SYSTEMS
1Mx16x4
LCD 320X200
CR10
CR14
CR16
CR18
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Untitled
Abstract: No abstract text available
Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation
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UG08C14488HSG
2000mil)
128MB
200-Pin
DQ120
DQ121
DQ122
DQ123
DQ124
DQ125
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tsop 138
Abstract: DQ114
Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation
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UG08E14488HSG
2000mil)
128MB
200-Pin
DQ120
DQ121
DQ122
DQ123
DQ124
DQ125
tsop 138
DQ114
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DQ77
Abstract: SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114
Text: SM51441000LP January 1993 Rev 0 SMART Modular Technologies SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000LP
16MByte
SM51441000LP
16-megabyte
100-pin,
72-bit
70/80ns
DQ77
SMART Modular Technologies
SM51441000LP-07
SM51441000LP-08
dram memory module 1993
DQ114
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Untitled
Abstract: No abstract text available
Text: UGSN7005A8HXF-512 Data sheets can be downloaded at www.unigen.com 512MB 16M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 512MB 200pin DIMM (2PCS 256MB (16M x 144) module kit) PIN ASSIGNMENT (Front View)
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UGSN7005A8HXF-512
2560mil)
512MB
512MB
200pin
256MB
200-Pin
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Untitled
Abstract: No abstract text available
Text: UG08C14488HSG Revision History Jan 13 , 2000 Rev - A Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788 support@unigen.com Re-Tek- 561_MT UG08C14488HSG 128M Bytes (8M x 144) DRAM 200Pin DIMM w/ECC based on 8M x 8
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UG08C14488HSG
200Pin
U08C14488HSG
400mil
16bit
240mil
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Untitled
Abstract: No abstract text available
Text: j>" î f «SB SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000LP
16MByte
SM51441000LP
16-megabyte
100-pin,
70/80ns
20/16W
70/80ns)
DQ115
DQ116
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